(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
Repetitive Avalanche Current
(Current Decaying Linearly to Zero in 1
ms,
Frequency Limited by T
Jmax
)
Storage / Operating Case Temperature
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
AR
T
stg
T
J
dv/dt
Value
35
Unit
V
8.0
16
75
2.0
−65
to +150
−65
to +150
10,000
A
A
A
A
°C
°C
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
−
Junction−to−Case
Thermal Resistance
−
Junction−to−Ambient (Note 2)
2. Rating applies when surface mounted on the minimum pad size recommended.
Symbol
R
qJC
R
qJA
Value
2.8
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 8 Amps, T
C
= + 25°C)
(i
F
= 8 Amps, T
C
= +125°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= + 25°C)
(Rated dc Voltage, T
C
= +100°C)
Symbol
V
F
Value
0.51
0.41
1.4
35
Unit
V
I
R
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2%.
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2
MBRD835L, SBRD8835L
TYPICAL CHARACTERISTICS
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (mA)
10
10
T
J
= 125°C
1
25°C
T
J
= 125°C
1
75°C
0.1
25°C
0.01
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
0
0.1
0.2
0.3
0.4
0.5
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
0.6
Figure 1. Maximum Forward Voltage
1000
100
I R, REVERSE CURRENT (mA)
I R, REVERSE CURRENT (mA)
100
10
1
0.1
0.01
0.001
0.01
25°C
T
J
= 125°C
Figure 2. Typical Forward Voltage
T
J
= 125°C
10
100°C
100°C
1
75°C
0.1
25°C
0
5
10
15
20
25
V
F
, REVERSE VOLTAGE (VOLTS)
30
35
0
5
10
15
20
25
V
R
, REVERSE VOLTAGE (VOLTS)
30
35
Figure 3. Maximum Reverse Current
Figure 4. Typical Reverse Current
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3
MBRD835L, SBRD8835L
TYPICAL CHARACTERISTICS
T
J
= 25°C
1000
TYPICAL
MAXIMUM
C, CAPACITANCE (pF)
100
1
10
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 5. Maximum and Typical Capacitance
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
16
14.4
12.8
11.2
9.6
8
6.4
4.8
3.2
1.6
0
80
85
90
10
20
95 100 105 110 115
T
C
, CASE TEMPERATURE (°C)
120
125
130
SQUARE WAVE
dc
p
(RESISTIVE LOAD)
(CAPACITIVE
IPK
+
5
LOAD)
IAV
T
J
= 125°C
R
qJA
= 6°C/W
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
8
T
J
= 125°C
7
6
5
4
3
2
1
0
0
10
20
10
20
30 40 50 60 70 80 90 100 110 120 130
T
A
, AMBIENT TEMPERATURE (°C)
p
(RESISTIVE LOAD)
SQUARE WAVE
dc
R
qJA
= 40°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
(CAPACITIVE
IPK
+
5
LOAD)
IAV
Figure 6. Current Derating, Infinite Heatsink
P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
Figure 7. Current Derating
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
10
20
20
30 40 50 60 70 80 90 100 110 120 130
T
A
, AMBIENT TEMPERATURE (°C)
10
dc
T
J
= 125°C
R
qJA
= 80°C/W
SURFACE MOUNTED ON
MINIMUM RECOMMENDED
PAD SIZE
(CAPACITIVE
IPK
+
5
LOAD)
IAV
8
7
6
5
10
4
20
3
2
1
0
0
1.5
4.5
6
7.5
9 10.5 12 13.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
3
15
T
J
= 125°C
p
(RESISTIVE LOAD)
SQUARE WAVE
dc
p
(RESISTIVE LOAD)
SQUARE WAVE
(CAPACITIVE
IPK
+
5
LOAD)
IAV
Figure 8. Current Derating, Free Air
Figure 9. Forward Power Dissipation
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4
MBRD835L, SBRD8835L
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
E
b3
L3
1
4
A
B
A
C
c2
Z
DETAIL A
D
2
3
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−−
0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
L4
b2
e
TOP VIEW
NOTE 7
b
0.005 (0.13)
H
M
c
SIDE VIEW
C
Z
C
SEATING
PLANE
BOTTOM VIEW
Z
L2
GAUGE
PLANE
L
L1
DETAIL A
A1
BOTTOM VIEW
ALTERNATE
CONSTRUCTIONS
ROTATED 90 CW
5
SOLDERING FOOTPRINT*
6.20
0.244
3.00
0.118
2.58
0.102
5.80
0.228
1.60
0.063
6.17
0.243
SCALE 3:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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coverage may be accessed at
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ON Semiconductor reserves the right to make changes without further notice to any products herein.
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regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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