HFA60EA120P
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 60 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
SOT-227
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
PRODUCT SUMMARY
V
R
V
F
(typical)
t
rr
(typical)
I
F(DC)
at T
C
1200 V
2.2 V
145 ns
30 A at 120 °C
This SOT-227 modules with HEXFRED
®
rectifier are in
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
RMS isolation voltage
Operating junction and storage
temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 120 °C
T
J
= 25 °C
Rated V
R,
square wave, 20 kHz, T
C
= 60 °C
T
C
= 25 °C
T
C
= 100 °C
Any terminal to case, t = 1 minute
TEST CONDITIONS
MAX.
1200
30
350
130
312
125
2500
- 55 to 150
W
V
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Cathode to anode
breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 30 A
Forward voltage
V
FM
I
F
= 60 A
I
F
= 60 A, T
J
= 150 °C
Reverse leakage current
I
RM
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
MIN.
1200
-
-
-
-
-
TYP.
-
2.2
2.7
2.1
2.0
2.7
MAX.
-
3.0
3.8
-
75
10
μA
mA
V
UNITS
Document Number: 94610
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
HFA60EA120P
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 60 A
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
t
rr
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
dI
F
/dt = - 200 A/μs
V
R
= 200 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
TYP.
145
218
13
19
910
1920
MAX.
-
-
-
-
-
-
UNITS
ns
Peak recovery current
A
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case, single leg conducting
Junction to case, both legs conducting
Case to heatsink
Weight
Mounting torque
SYMBOL
R
thJC
R
thCS
Flat, greased and surface
TEST CONDITIONS
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX.
0.4
0.2
-
-
-
g
Nm
°C/W
UNITS
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2
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94610
Revision: 06-Aug-10
HFA60EA120P
HEXFRED
®
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A
1000
Instantaneous Forward Current - I
F
(A)
10
150°C
100
Reverse Current - I
R
(mA)
1
125°C
0.1
0.01
25°C
0.001
10
Tj = 150°C
Tj = 125°C
Tj = 25°C
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Forward Voltage Drop - V
FM
(V)
0.0001
200
400
600
800
1000
1200
Reverse Voltage - V
R
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
0.1
D = 0.33
D = 0.25
D = 0.2
0.01
Single Pulse
(Thermal Resistance)
0.001
0.0001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 3 - Maximum Thermal Impedance Z
thJC
Characteristics
160
Allowable Case Temperature (°C)
Average Power Loss - (Watts)
300
250
200
150
100
50
0
180°
120°
90°
60°
30°
140
120
100
80
60
40
20
0
0
20
40
60
80
100
Average Forward Current - I
F
(AV)
(A)
Square wave (D=0.50)
80% rated Vr applied
see note (1)
DC
DC
RMS Limit
0
20
40
60
80
100
Average Forward Current - I
F
(AV)
(A)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 5 - Forward Power Loss Characteristics
Document Number: 94610
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
HFA60EA120P
Vishay Semiconductors
HEXFRED
®
Ultrafast Soft Recovery Diode, 60 A
3000
Vr = 200V
300
Vr = 200V
250
If = 50A, Tj = 125°C
2500
If = 50A, Tj = 125°C
2000
Q
rr
(nC)
t
rr
(ns)
200
If = 50A, Tj = 25°C
1500
If = 50A, Tj = 25°C
150
1000
500
0
100
100
50
100
1000
1000
dI
F
/dt (A/μs)
dI
F
/dt (A/μs)
Fig. 6 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 7 - Typical Stored Charge vs. dI
F
/dt
40
Vr = 200V
30
If = 50A, Tj = 125°C
I
rr
(A)
20
If = 50A, Tj = 25°C
10
0
100
1000
dI
F
/dt (A/μs)
Fig. 8 - Typical Peak Recovery Current vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 5);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
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4
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 94610
Revision: 06-Aug-10
HFA60EA120P
HEXFRED
®
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 60 A
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94610
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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