• Active Clamp in Intermediate DC/DC Power Supplies
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S
G
Bottom
View
Ordering Information:
Si7115DN-T1-E3 (Lead (Pb)-free)
Si7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
Limit
- 150
± 20
- 8.9
- 7.1
- 2.3
a, b
- 1.9
a, b
- 15
- 13
- 3
a, b
15
11.25
52
33
3.7
a, b
2.4
a, b
- 50 to 150
260
Unit
V
Continuous Drain Current (T
J
= 150 °C)
I
D
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
I
DM
I
S
I
AS
E
AS
A
mJ
Maximum Power Dissipation
P
D
W
°C
Soldering Recommendations (Peak Temperature)
c, d
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Based on T
C
= 25 °C.
Operating Junction and Storage Temperature Range
T
J
, T
stg
Document Number: 73864
S11-1908-Rev. C, 26-Sep-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7115DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 81 °C/W.
a, b
t
10
s
Steady State
Symbol
R
thJA
R
thJC
Typical
26
1.9
Maximum
33
2.4
Unit
°C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= - 3 A
- 0.8
65
180
45
20
T
C
= 25 °C
- 13
- 15
- 1.2
90
270
A
V
ns
nC
ns
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 75 V, R
L
= 25
I
D
- 3 A, V
GEN
= - 10 V, R
g
= 1
V
DD
= - 75 V, R
L
= 25
I
D
- 3 A, V
GEN
= - 6 V, R
g
= 1
f = 1 MHz
1.3
V
DS
= - 75 V, V
GS
= - 10 V, I
D
= - 3 A
V
DS
= - 75 V, V
GS
= - 6 V, I
D
= - 3 A
V
DS
= - 50 V, V
GS
= 0 V, f = 1 MHz
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= - 150 V, V
GS
= 0 V
V
DS
= - 150 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
- 5 V, V
GS
= - 10 V
V
GS
= - 10 V, I
D
= - 4 A
V
GS
= - 6 V, I
D
= - 3 A
V
DS
= - 15 V, I
D
= 4 A
-8
0.245
0.260
12
1190
61
42
27.5
23.2
5.4
8.4
6.1
20
95
38
34
11
28
52
35
9.2
30
145
60
51
18
42
78
53
ns
42
35
nC
pF
0.295
0.315
-2
- 150
- 165
- 6.6
-4
± 100
-1
- 10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73864
S11-1908-Rev. C, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7115DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
20
V
GS
= 10 thru 6
V
16
1.6
I
D
- Drain C
u
rrent (A)
2.0
I
D
- Drain C
u
rrent (A)
12
5
V
1.2
T
C
= 125 °C
0.8
8
4
4
V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source
Voltage
(V)
0.4
25 °C
- 55 °C
0.0
0
1
2
3
4
5
6
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.6
1700
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.5
C - Capacitance (pF)
1360
C
iss
1020
0.4
V
GS
= 6
V
0.3
V
GS
= 10
V
0.2
680
340
C
oss
0.1
0
4
8
12
16
20
I
D
- Drain Current (A)
0
C
rss
0
20
40
60
80
100
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 3 A
R
DS(on)
- On-Resistance (
N
ormalized)
2.2
I
D
= 4 A
Capacitance
V
GS
- Gate-to-So
u
rce
V
oltage (
V
)
8
V
DS
= 250
V
6
V
DS
= 100
V
1.9
V
GS
= 10
V
1.6
V
GS
= 6
V
1.3
4
V
DS
= 75
V
1.0
2
0.7
0
0
6
12
18
24
30
Q
g
- Total Gate Charge (nC)
0.4
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73864
S11-1908-Rev. C, 26-Sep-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7115DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
2.0
1.6
I
S
- So
u
rce C
u
rrent (A)
10
T
J
= 150 °C
25 °C
1.2
0.8
125 °C
0.4
25 °C
0.0
0
1
2
3
4
5
6
7
8
9
10
1
0.1
0.00
0.3
0.6
0.9
1.2
1.5
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
1.0
50
On-Resistance vs. Gate-to-Source Voltage
0.7
I
D
= 250
µA
Po
w
er (
W
)
150
V
GS(th)
(
V
)
0.4
I
D
= 5 mA
40
30
0.1
20
- 0.2
10
- 0.5
- 50
- 25
0
25
50
75
100
125
T
J
- Temperature (°C)
0
0.01
0.1
1
Time (s)
10
100
Threshold Voltage
100
Single Pulse Power, Junction-to-Ambient
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
I
D
– Drain C
u
rrent (A)
100
*Limited
by
r
DS(on
)
DS(on)
10
1 ms
s
10
ms
m
s
1
100 m
s
ms
1s
10 s
dc
1
0.1
T
A
= 25 °C
Single
Sin
le
Pulse
e
0.01
0.01
0.0
*V
GS
S
0.1
1
10
100
1 ms
10 ms
100 ms
1s
10 s
DC
V
DS
–
Drain-to-Source
Voltage
(V)
oltage
(V
)
S
minimum
V
GS
at
which
r
DS(on
)
is specified
S
DS(on)
0.1
0.01
0.1
T
A
= 25 °C
Single Pulse
*
V
GS
1
10
100
1000
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73864
S11-1908-Rev. C, 26-Sep-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7115DN
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
8
I
D
- Drain C
u
rrent (A)
6
4
2
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
65
2.0
52
1.6
Po
w
er (
W
)
26
Power (W)
39
1.2
0.8
13
0.4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation PD is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases
where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73864
S11-1908-Rev. C, 26-Sep-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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