Si4730EY
New Product
Vishay Siliconix
Current Sensing MOSFET, N-Channel 30-V (D-S)
PRODUCT SUMMARY
V
DS
(V)
30
r
DS(on)
(W)
0.015 @ V
GS
= 10 V
0.020 @ V
GS
= 4.5 V
I
D
(A)
11.7
10.1
D
SO-8
SENSE
KELVIN
S
G
1
2
3
4
Top View
S
8
7
6
5
D
D
G
D
D
SENSE
N-Channel MOSFET
KELVIN
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
30
"20
11.7
9.8
40
3.3
3.6
2.5
Steady State
Unit
V
8.0
6.7
A
1.6
1.7
1.2
–55 to 175
_C
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71177
S-00823—Rev. A, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
35
77
18
Maximum
42
90
22
Unit
_C/W
1
Si4730EY
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 11.7 A
V
GS
= 4.5 V, I
D
= 10.1 A
V
DS
= 15 V, I
D
= 11.7 A
I
S
= 3.3 A, V
GS
= 0 V
40
0.0125
0.015
35
0.75
1.1
0.015
0.020
S
V
1.0
"100
1
25
V
nA
mA
A
W
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 3.3 A, di/dt = 100 A/ms
V
DD
= 15 V, R
L
= 15
W
V,
I
D
^
1 A, V
GEN
= 10 V R
G
= 6
W
A
V,
V
DS
= 15 V, V
GS
= 10 V I
D
= 11.7 A
V
V,
11 7
34
7
5.6
13
10
60
20
30
26
20
120
40
60
ns
50
nC
C
Current Sense Characteristics
Current Sensing Ratio
Mirror Active Resistance
r
r
m(on)
I
D
= 1 A, V
GSS
= 10 V, R
SENSE
= 2.2
W
V
GS
= 10 V, I
D
= 10 mA
360
450
3.5
540
W
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
V
GS
= 10 thru 4 V
32
I
D
– Drain Current (A)
I
D
– Drain Current (A)
32
40
Transfer Characteristics
24
24
16
3V
8
2V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
16
T
C
= 125_C
8
25_C
–55_C
0
0
1
2
3
4
V
DS
– Drain-to-Source Voltage (V)
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FaxBack 408-970-5600
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71177
S-00823—Rev. A, 01-May-00
2
Si4730EY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.025
r
DS(on)
– On-Resistance (
W
)
3000
Vishay Siliconix
Capacitance
C – Capacitance (pF)
0.020
V
GS
= 4.5 V
0.015
V
GS
= 10 V
2500
C
iss
2000
1500
0.010
1000
C
oss
500
C
rss
0.005
0
0
8
16
24
32
40
0
0
6
12
18
24
30
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 11.7 A
8
1.8
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 11.7 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
14
21
28
35
1.6
1.4
6
1.2
4
1.0
2
0.8
0
0
7
Q
g
– Total Gate Charge (nC)
0.6
–50
–25
0
25
50
75
100
125
150
175
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.030
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
10
r
DS(on)
– On-Resistance (
W
)
0.025
0.020
I
D
= 11.7 A
0.015
T
J
= 25_C
0.010
0.005
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71177
S-00823—Rev. A, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
3
Si4730EY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.4
0.2
40
–0.0
V
GS(th)
Variance (V)
–0.2
–0.4
–0.6
–0.8
10
–1.0
–1.2
–50
0
10
–2
I
D
= 250
mA
Power (W)
30
Threshold Voltage
50
Single Pulse Power
20
–25
0
25
50
75
100
125
150
175
10
–1
1
Time (sec)
10
100
600
T
J
– Temperature (_C)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 77_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
S
FaxBack 408-970-5600
4
Document Number: 71177
S-00823—Rev. A, 01-May-00
Si4730EY
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Sense Current
10
10
Vishay Siliconix
SENSE DIE
On-Resistance vs. Gate-Source Voltage
r
DS(on)
– On-Resistance (
W)
r
DS(on)
– On-Resistance (
W)
8
8
6
V
GS
= 4.5 V
6
I
D
= 10 mA
4
V
GS
= 10 V
4
2
2
0
0
0.02
0.04
0.06
0.08
0.10
0
0
2
4
6
8
10
I
SENSE
(A)
V
GS
– Gate-to-Source Voltage (V)
Current Ratio (I
(MAIN)/IS
)
vs. Gate-Source Voltage (Figure 1)
1000
R
S
= 6.6
W
800
R
S
= 4.7
W
600
Ratio
R
S
= 2.2
W
400
R
S
= 1.1
W
V
G
SENSE
S
KELVIN
G
R
S
200
0
0
2
4
6
8
10
12
14
16
Figure 1
V
GS
– Gate-to-Source Voltage (V)
Document Number: 71177
S-00823—Rev. A, 01-May-00
www.vishay.com
S
FaxBack 408-970-5600
5
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