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VSIB2580-E3/45

产品描述Bridge Rectifiers 800 Volt 25 Amp 350 Amp IFSM
产品类别分立半导体    二极管   
文件大小93KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

VSIB2580-E3/45概述

Bridge Rectifiers 800 Volt 25 Amp 350 Amp IFSM

VSIB2580-E3/45规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明R-PSFM-T4
针数4
制造商包装代码CASE GSIB-5S
Reach Compliance Codeunknown
其他特性UL RECOGNIZED
外壳连接ISOLATED
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
最大正向电压 (VF)1 V
JESD-30 代码R-PSFM-T4
JESD-609代码e3
最大非重复峰值正向电流350 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流3.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压800 V
表面贴装NO
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
Not Available for New Designs, Use GSIB2020, GSIB2040, GSIB2060, GSIB2080
VSIB2520, VSIB2540, VSIB2560, VSIB2580
www.vishay.com
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
~
~
• High case dielectric strength of 2500 V
RMS
• Solder dip 260 °C, 40 s
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
~
~
Case Style GSIB-5S
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 12.5 A
T
J
max.
Diode variations
GSIB-5S
25 A
200 V, 400 V, 600 V, 800 V
350 A
10 μA
1.0 V
150 °C
In-Line
MECHANICAL DATA
Case:
GSIB-5S
Epoxy meets UL 94 V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
output current at
T
C
= 98 °C
(1)
T
A
= 25 °C
(2)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
VSIB2520
200
140
200
VSIB2540
400
280
400
25
3.5
350
500
VSIB2560
600
420
600
VSIB2580
800
560
800
UNIT
V
V
V
A
A
A
2
s
°C
Peak forward surge current single sine-wave
superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
Notes
(1)
Unit case mounted on aluminum plate heatsink
(2)
Units mounted on PCB without heatsink
- 55 to + 150
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
drop per diode
Maximum DC reverse current at rated DC
blocking voltage per diode
TEST CONDITIONS SYMBOL
12.5 A
T
A
= 25 °C
T
A
= 125 °C
V
F
I
R
VSIB2520
VSIB2540
VSIB2560
VSIB2580
UNIT
V
μA
1.00
10
350
Revision: 26-Jun-13
Document Number: 84655
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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