VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3
www.vishay.com
Vishay Semiconductors
Hyperfast Rectifier, 8 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Benchmark ultralow forward voltage drop
• 175 °C operating junction temperature
TO-220AC
Base
cathode
2
TO-220 FULL-PAK
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 approved
• Designed and qualified according to
JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
Available
1
Cathode
3
Anode
1
Cathode
3
Anode
VS-8ETX06PbF
VS-8ETX06-N3
VS-8ETX06FPPbF
VS-8ETX06FP-N3
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
TO-220AC, TO-220FP
8A
600 V
1.4 V
15 ns
175 °C
Single die
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Repetitive peak forward current
Operating junction and storage temperatures
SYMBOL
V
RRM
FULL-PAK
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
T
C
= 143 °C
T
C
= 106 °C
T
J
= 25 °C
TEST CONDITIONS
VALUES
600
8
110
18
-65 to +175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.3
1.4
0.3
35
17
8.0
MAX.
-
3.0
1.7
50
500
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 13-May-16
Document Number: 94032
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
I
F
= 8 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 600 A/μs
V
R
= 390 V
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
15
16
17
40
2.3
4.5
20
100
31
12
195
MAX.
19
24
-
-
-
-
-
-
-
-
-
A
ns
UNITS
DYNAMIC RECOVERY CHARACTERISTICS
(T
C
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
t
rr
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
nC
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
TEST CONDTIONS
MIN.
-65
-
-
-
-
-
-
6.0
(5.0)
Case style TO-220AC
Case style TO-220 FULL-PAK
TYP.
-
1.4
3.4
-
0.5
2.0
0.07
-
MAX.
175
2
4.3
70
-
-
-
12
(10)
8ETX06
8ETX06FP
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
(FULL-PAK)
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
100
1000
T
J
= 175 °C
I
R
- Reverse Current (µA)
100
10
1
0.1
0.01
0.001
0.0001
I
F
- Instantaneous
Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
10
1
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 25 °C
0.1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 13-May-16
Document Number: 94032
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
.
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
Single pulse
(thermal resistance)
0.01
0.00001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
.
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
1
10
.
100
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 5 - Maximum Thermal Impedance Z
thJC
Characteristics (FULL-PAK)
Revision: 13-May-16
Document Number: 94032
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3
www.vishay.com
180
20
18
170
Vishay Semiconductors
Allowable Case Temperature (°C)
Average Power Loss (W)
16
14
12
10
8
6
4
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
RMS limit
160
DC
150
140
130
See note (1)
120
0
2
4
6
8
10
12
Square wave (D = 0.50)
Rated V
R
applied
2
0
0
2
4
6
8
10
12
14
I
F(AV)
(A) Average Forward Current
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
180
160
140
120
100
80
60
See note (1)
40
0
2
4
6
8
10
12
10
100
Square wave (D = 0.50)
Rated V
R
applied
40
50
I
F(AV)
- Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
Allowable Case Temperature (°C)
I
F
= 16 A
I
F
= 8 A
t
rr
(ns)
DC
30
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 16 A
I
F
= 8 A
1000
20
I
F(AV)
- Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
300
250
200
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
dI
F
/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
Q
rr
(nC)
150
100
I
F
= 16 A
I
F
= 8 A
I
F
= 16 A
50
0
100
I
F
= 8 A
1000
dI
F
/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 8); Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Revision: 13-May-16
Document Number: 94032
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8ETX06PbF, VS-8ETX06-N3, VS-8ETX06FPPbF, VS-8ETX06FP-N3
www.vishay.com
V
R
= 200 V
Vishay Semiconductors
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Revision: 13-May-16
Document Number: 94032
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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