NLX1G58
Configurable Multifunction
Gate
The NLX1G58 MiniGatet is an advanced high−speed CMOS
multifunction gate. The device allows the user to choose logic
functions AND, OR, NAND, NOR, XOR, INVERT and BUFFER.
The device has Schmitt−trigger inputs, thereby enhancing noise
immunity.
The NLX1G58 input and output structures provide protection when
voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
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MARKING
DIAGRAMS
ULLGA6
1.0 x 1.0
CASE 613AD
ULLGA6
1.2 x 1.0
CASE 613AE
ULLGA6
1.45 x 1.0
CASE 613AF
M
E
•
•
•
•
•
•
•
High Speed: t
PD
= 3.4 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1
mA
(Maximum) at T
A
= 25°C
Power Down Protection Provided on inputs
Balanced Propagation Delays
Overvoltage Tolerant (OVT) Input and Output Pins
Ultra−Small Packages
These are Pb−Free Devices
1
M
E
1
M
E
1
1
UDFN6
1.0 x 1.0
CASE 517BX
UDFN6
1.2 x 1.0
CASE 517AA
M
4
4
M
1
1
UDFN6
1.45 x 1.0
CASE 517AQ
5M
E, 4, 5 = Specific Device Code
M = Date Code
PIN ASSIGNMENTS
IN B
GND
IN A
1
2
3
6
5
4
(Top View)
IN C
V
CC
OUT Y
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
September, 2013
−
Rev. 2
1
Publication Order Number:
NLX1G58/D
NLX1G58
IN A
OUT Y
IN B
IN C
Figure 1. Function Diagram
PIN ASSIGNMENT
1
2
3
4
5
6
IN B
GND
IN A
OUT Y
V
CC
IN C
A
L
L
L
L
H
H
H
H
FUNCTION TABLE*
Input
B
L
L
H
H
L
L
H
H
C
L
H
L
H
L
H
L
H
Output
Y
L
H
L
L
H
H
H
L
*To select a logic function, please refer to “Logic Configurations
section”.
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2
NLX1G58
LOGIC CONFIGURATIONS
V
CC
Y
B
1
2
B
C
Y
3
6
5
4
Y
B
C
Y
C
V
CC
Y
B
1
2
3
6
5
4
Y
C
B
C
B
C
Figure 2. 2−Input NAND (When A = “H”)
Figure 3. 2−Input AND with Input B Inverted
(When A = “L”)
V
CC
V
CC
A
C
A
C
Y
A
1
2
Y
A
3
6
5
4
Y
A
C
Y
A
C
C
Y
1
2
3
6
5
4
Y
C
Figure 4. 2−Input AND with Input C Inverted
(When B = “H”)
V
CC
Figure 5. 2−Input OR (When B = “L”)
V
CC
B
C
B
Y
1
2
3
6
5
4
C
A
Y
Y
A
1
2
3
6
5
4
Y
Figure 6. 2−Input XOR (When A = B)
Figure 7. Buffer (When B = C = “L”)
V
CC
B
B
Y
1
2
3
6
5
4
Y
Figure 8. Inverter (When A = “L” and C = “H”)
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3
NLX1G58
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating Oxygen
ESD Withstand Voltage
Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5
to +7.0
−0.5
to +7.0
−0.5
to +7.0
−50
−50
$50
$100
$100
−65
to +150
260
150
Level 1
UL 94 V−0 @ 0.125 in
>2000
>200
N/A
$500
V
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5)
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
CC
= 2.5 V
$
0.2 V
V
CC
= 3.3 V
$
0.3 V
V
CC
= 5.0 V
$
0.5 V
Parameter
Min
1.65
0
0
−55
0
0
0
Max
5.5
5.5
5.5
+125
No Limit
No Limit
No Limit
Unit
V
V
V
°C
nS/V
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4
NLX1G58
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
1.65
2.3
3.0
4.5
5.5
V
T−
Negative
Threshold
Voltage
1.65
2.3
3.0
4.5
5.5
V
H
Hysteresis
Voltage
1.65
2.3
3.0
4.5
5.5
V
OH
Minimum
High−Level
Output
Voltage
V
IN
= V
T−MIN
or V
T+MAX
I
OH
=
−50
mA
V
IN
= V
T−MIN
or V
T+MAX
I
OH
=
−4
mA
I
OH
=
−8
mA
I
OH
=
−16
mA
I
OH
=
−24
mA
I
OH
=
−32
mA
V
OL
Maximum
Low−Level
Output
Voltage
V
IN
= V
T−MIN
or V
T+MAX
I
OL
= 50
mA
V
IN
= V
T−MIN
or V
T+MAX
I
OL
= 4 mA
I
OL
= 8 mA
I
OL
= 16 mA
I
OL
= 24 mA
I
OL
= 32 mA
I
IN
Input
Leakage
Current
Quiescent
Supply
Current
0
v
V
IN
v
5.5 V
1.65
2.3
3.0
3.0
4.5
0 to
5.5
5.5
0.45
0.3
0.4
0.55
0.55
$0.1
0.45
0.3
0.4
0.55
0.55
$1.0
0.45
0.3
0.4
0.55
0.55
$1.0
mA
1.65
2.3
3.0
3.0
4.5
1.65
−
5.5
1.2
1.9
2.4
2.3
3.8
0.1
1.2
1.9
2.4
2.3
3.8
0.1
1.2
1.9
2.4
2.3
3.8
0.1
V
1.65
−
5.5
T
A
= 255C
Min
0.79
1.11
1.5
2.16
2.61
0.35
0.58
0.84
1.41
1.78
0.30
0.40
0.53
0.71
0.8
V
CC
−
0.1
Typ
Max
1.16
1.56
1.87
2.74
3.33
0.62
0.87
1.19
1.9
2.29
0.62
0.8
0.87
1.04
1.2
0.35
0.58
0.84
1.41
1.78
0.30
0.40
0.53
0.71
0.8
V
CC
−
0.1
0.62
0.8
0.87
1.04
1.2
T
A
v
+855C
Min
Max
1.16
1.56
1.87
2.74
3.33
0.35
0.58
0.84
1.41
1.78
0.30
0.40
0.53
0.71
0.8
V
CC
−
0.1
0.62
0.8
0.87
1.04
1.2
V
V
T
A
=
−555C
to
+1255C
Min
Max
1.16
1.56
1.87
2.74
3.33
V
Unit
V
Symbol
V
T+
Parameter
Positive
Threshold
Voltage
Conditions
I
CC
V
IN
= V
CC
or GND
1.0
10
10
mA
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