Freescale Semiconductor
Technical Data
Document Number: MRF7S19080H
Rev. 2, 3/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD--SCDMA and PCN--PCS/cellular radio
applications.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
750 mA, P
out
= 24 Watts Avg., f = 1987.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 80 Watts CW
Output Power
•
P
out
@ 1 dB Compression Point
≃
80 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
MRF7S19080HR3
MRF7S19080HSR3
1930-
-1990 MHz, 24 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465-
-06, STYLE 1
NI-
-780
MRF7S19080HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF7S19080HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 79 W CW
Case Temperature 79°C, 24 W CW
Symbol
R
θJC
Value
(2,3)
0.60
0.69
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2007--2008, 2011. All rights reserved.
MRF7S19080HR3 MRF7S19080HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 174
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 750 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.74 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
0.64
297
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1.2
2
0.1
2
2.7
0.21
2.7
3.5
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, P
out
= 24 W Avg., f = 1987.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part internally matched both on input and output.
(continued)
G
ps
η
D
PAR
ACPR
IRL
17
30
5.7
—
—
18
32
6.2
--38
--20
20
—
—
--35
--9
dB
%
dB
dBc
dB
MRF7S19080HR3 MRF7S19080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 80 W PEP P
out
where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3
= IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 24 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 80 W CW
Average Group Delay @ P
out
= 80 W CW, f = 1960 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 80 W CW,
f = 1960 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
VBW
—
90
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 750 mA, 1930--1990 MHz Bandwidth
G
F
Φ
Delay
∆Φ
∆G
∆P1dB
—
—
—
—
—
—
0.165
1.14
2.25
22.3
0.009
0.017
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dB/°C
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
R1
C2
C3
C4
C5
R2
+
C6
Z7
Z8
C8
C9
C10
C11
C12
+
C13
V
SUPPLY
RF
INPUT
Z3
Z1
C1
Z2
Z4
Z5
Z6
DUT
Z9
Z10
Z11
Z12
C7
Z13
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.530″ x 0.084″ Microstrip
0.336″ x 0.084″ Microstrip
0.211″ x 0.180″ x 0.084″ Taper
0.704″ x 0.216″ Microstrip
0.220″ x 0.216″ x 0.084″ Taper
0.504″ x 0.800″ x 0.084″ Taper
0.265″ x 0.313″ x 0.332″ x 0.040″ Taper
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.306″ x 0.388″ x 0.090″ Taper
0.880″ x 0.201″ x 0.795″ Taper
0.415″ x 0.084″ Microstrip
0.191″ x 0.243″ x 0.084″ Taper
0.510″ x 0.084″ Microstrip
0.525″ x 0.084″ Microstrip
Arlon CuClad 250GX--0300--55--22, 0.030″,
ε
r
= 2.55
Figure 1. MRF7S19080HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S19080HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C7
C2, C11
C3
C4
C5, C10
C6
C8
C9
C12
C13
R1
R2
Description
15 pF Chip Capacitors
13 pF Chip Capacitors
10
μF
Chip Capacitor
1000 pF Chip Capacitor
0.1
μF
Chip Capacitors
5.1 pF Chip Capacitor
6.8 pF Chip Capacitor
2.2
μF
Chip Capacitor
470
μF,
63 V Electrolytic Capacitor
100
μF,
50 V Electrolytic Capacitor
330
Ω,
1/4 W Chip Resistor
10
Ω,
1/4 W Chip Resistor
Part Number
ATC100B150JT500XT
ATC100B130JT500XT
GRM31MF51A106ZA01B
ATC100B102JT50XT
C1206C104K5RAC
ATC100B5R1CT500XT
ATC100B6R8CT500XT
C1825C225J5RAC
EKME630ELL471MK25S
MCHT101M1HB--1017--RH
CRCW12063300FKEA
CRCW120610R0FKEA
Manufacturer
ATC
ATC
TDK
ATC
Kemet
ATC
ATC
Kemet
United Chemi--Con
Multicomp
Vishay
Vishay
MRF7S19080HR3 MRF7S19080HSR3
4
RF Device Data
Freescale Semiconductor
C12
R1
R2
C6
C8
C13
C9
C10
C11
C2 C3 C4
C5
C1
CUT OUT AREA
C7
HV7
2.1 GHz
NI780
Rev. 1
Figure 2. MRF7S19080HR3(HSR3) Test Circuit Component Layout
MRF7S19080HR3 MRF7S19080HSR3
RF Device Data
Freescale Semiconductor
5
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