PTFB090901EA
PTFB090901FA
Thermally-Enhanced High Power RF LDMOS FETs
90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 920 to 960 MHz frequency band. Features in-
clude input and output matching, high gain and thermally-enhanced
packages. Manufactured with Infineon's advanced LDMOS pro-
cess, these devices provide excellent thermal performance and
superior reliability.
PTFB090901EA
Package H-36265-2
PTFB090901FA
Package H-37265-2
V
DD
= 28 V, I
DQ
= 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
23
22
60
50
40
30
20
Two-carrier WCDMA Drive-up
Features
•
Input and output internal matching
•
Typical CW performance, 960 MHz, 28 V
- Output power at P
1dB
= 90 W
- Efficiency = 65%
•
Typical two-carrier WCDMA performance,
960 MHz, 28 V
- Average output power = 20 W
- Linear Gain = 20.8 dB
- Efficiency = 35%
- Intermodulation distortion = –35 dBc
•
Integrated ESD protection
•
Low thermal resistance
•
Pb-free and RoHS-compliant
•
Capable of handling 10:1 VSWR @ 28 V, 90 W (CW)
output power
Gain (dB)
G
21
20
19
18
17
31
Efficiency
10
b090901 gr 1
33
35
37
39
41
43
45
47
49
0
Output Power, Avg. (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 650 mA, P
OUT
= 25 W average, ƒ = 960 MHz
3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Eff
ficiency (%)
Gain
Symbol
G
ps
Min
19
36
—
Typ
19.5
40
–35
Max
—
—
–31.5
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 05.2, 2016-06-09
PTFB090901EA
PTFB090901FA
RF Characteristics
(cont.)
Two-tone Specifications
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 650 mA, P
OUT
= 70 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
—
—
—
Typ
19.5
48
–30
Max
—
—
—
Unit
dB
%
dBc
h
D
IMD
DC Characteristics
Characteristic
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
—
—
Typ
—
—
—
0.123
3.8
—
Max
—
1.0
10.0
—
—
1.0
Unit
V
µA
µA
On-state Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 650 mA
V
GS
= 10 V, V
DS
= 0 V
W
V
µA
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 85 W CW)
Symbol
V
DSS
V
GS
T
J
T
STG
R
q
JC
Value
65
–6 to +10
200
–40 to +150
0.73
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB090901EA V2 R0
PTFB090901EA V2 R250
PTFB090901FA V2 R0
PTFB090901FA V2 R250
Order Code
PTFB090901EAV2R0XTMA1
PTFB090901EAV2R250XTMA1
PTFB090901FAV2R0XTMA1
PTFB090901FAV2R250XTMA1
Package
H-36265-2
H-36265-2
H-37265-2
H-37265-2
Package Description
Ceramic open-cavity, bolt-down
Ceramic open-cavity, bolt-down
Ceramic open-cavity, earless
Ceramic open-cavity, earless
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 14
Rev. 05.2, 2016-06-09
PTFB090901EA
PTFB090901FA
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-15
60
-20
-25
Two-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 650 mA,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz BW
IMD (dB ACPR (dBc)
Bc),
-20
-25
-30
-35
35
-40
-45
31
34
Efficiency
IMD Up
IMD Low
50
IM3 Low
IM3 Up
Imd (dBc)
40
30
20
10
49
0
Eff
ficiency (%)
-30
-35
-40
-45
960 MHz
940 MHz
920 MHz
ACPR
37
40
43
46
b090901 gr 3
b090901 gr 2
Output Power, Avg. (dBm)
31
33
35
37
39
41
43
45
47
Output Power, Avg. (dBm)
V
DD
= 28 V, I
DQ
= 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, TM1 w/64 DPCH,
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, TM1 w/64 DPCH,
100% clipping, PAR = 10 dB, 3.84 MHz BW
Adjacent Chan
nnel Power Ratio (dB)
60
Single-carrier WCDMA Drive-up
Intermodula
aion Distortion (dBc)
0
-10
-20
-30
-40
-50
-60
b090901 gr 4
0
-10
-20
-30
-40
-50
-60
32
35
38
Drain Efficiency (%)
ACPR Low
ACPR Up
40
30
20
10
40
ACPU
30
20
ACPL
b090901 gr 5
10
47
50
0
32
35
38
41
44
47
50
0
41
44
Output Power, Avg. (dBm)
Output Power, Avg. (dBm)
Data Sheet
3 of 14
Rev. 05.2, 2016-06-09
Drain Efficiency (%)
Efficiency
50
Efficiency
60
50
PTFB090901EA
PTFB090901FA
Typical Performance
(cont.)
Single-carrier WCDMA Broadband
V
DD
= 28 V, I
DQ
= 620 mA, P
OUT
= 28 W,
3GPP WCDMA signal
V
DD
= 30 V, I
DQ
= 650 mA, ƒ = 960 MHz
CW Power Sweep
Return Loss (dB) / ACP (dBc)
60
Gain (dB Efficiency (%)
.
B),
IRL
0
-10
-20
22
21
20
70
60
50
40
30
20
Efficiency
19
18
17
16
15
b090901 gr 7
40
IML3
-30
-40
Efficiency
Effi i
30
20
10
Gain
10
b090901 gr 6
810
855
900
945
990
1035
-50
1080
34
38
42
46
50
0
Frequency (MHz)
Output Power, Avg. (dBm)
V
DD
= 28 V, I
DQ
= 650 mA,
ƒ
1
= 960 MHz, ƒ
2
= 959 MHz
-25
60
50
22
21
Two-tone Drive-up
V
DD
= 30 V, I
DQ
= 650 mA,
ƒ
1
= 960 MHz, ƒ
2
= 959 MHz
Two-tone Drive-up
60
50
40
Effi
iciency (%)
IM (dBc)
MD
3rd Order IMD
30
-45
20
G
Gain (dB)
-35
40
20
19
18
17
16
Efficiency
y
30
20
10
b090901 gr 9
Efficiency
-55
b090901 gr 8
10
51
0
33
36
39
42
45
48
Output Power, PEP (dBm)
33
36
39
42
45
48
51
0
Output Power, PEP (dBm)
Data Sheet
4 of 14
Rev. 05.2, 2016-06-09
Effic
ciency (%)
Gain
Effici
iency (%)
Gain
50
Ga (dB)
ain
PTFB090901EA
PTFB090901FA
Typical Performance
(cont.)
Two-tone Drive-up
at selected frequencies
Two-tone Intermodulation Distortion
vs. Output Power
V
DD
= 28 V, I
DQ
= 650 mA,
ƒ
1
= 960 MHz, ƒ
2
= 959 MHz
V
DD
= 28 V, I
DQ
= 650 mA,
1 MHz
tone spacing
-20
-20
-30
3rd Order
5th
7th
IMD 3r Order (dBc)
rd
-30
-40
IMD (dBc)
D
b090901 gr 10
-40
-50
50
-60
-70
-50
960 MHz
940 MHz
920 MHz
33
36
39
42
45
48
51
-60
b090901 gr 11
33
36
39
42
45
48
51
Output Power, PEP (dBm)
Output Power, PEP (dBm)
V
DD
= 28 V, I
DQ
= 650 mA,
ƒ = 960 MHz
23
22
21
70
CW Drive-up
(over temperature)
V
DD
= 28 V, ƒ = 960 MHz
CW Drive-up
23
22
21
20
19
Gain
60
I
DQ
= 980 mA
20
19
18
17
16
34
+25ºC
+85°C
–30ºC
b090901 gr 12
40
30
20
10
50
0
Ef
fficiency (%)
50
Pow Gain (dB)
wer
Gain (dB)
G
I
DQ
= 650 mA
Efficiency
36
38
40
42
44
I
DQ
= 330 mA
18
b090901 gr 13
46
48
34
36
38
40
42
44
46
48
50
Output Power, Avg. (dBm)
Output Power, Avg. (dBm)
Data Sheet
5 of 14
Rev. 05.2, 2016-06-09
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