74LX1G32
LOW VOLTAGE CMOS SINGLE 2-INPUT OR GATE
WITH 5V TOLERANT INPUT
s
s
s
s
s
s
s
s
5V TOLERANT INPUTS
HIGH SPEED: t
PD
= 4.7ns (MAX.) at V
CC
= 3V
LOW POWER DISSIPATION:
I
CC
= 1µA (MAX.) at T
A
= 25°C
POWER DOWN PROTECTION ON INPUTS
AND OUTPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN) at V
CC
= 3V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 1.65V to 5.5V
(1.2V Data Retention)
IMPROVED LATCH-UP IMMUNITY
SOT23-5
SC70-5
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
T&R
74LX1G32STR
74LX1G32CTR
DESCRIPTION
The 74LX1G32 is a low voltage CMOS SINGLE
2-INPUT OR GATE fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
It is ideal for 1.65 to 5.5 V
CC
operations and low
power and low noise applications. The internal
circuit is composed of 3 stages including buffer
output, which provide high noise immunity and
stable output.
Power down protection is provided on input and
output and 0 to 7V can be accepted on inputs with
no regard to the supply voltage. It can be
interfaced to 5V signal environment for inputs in
mixed 3.3/5V system.
All inputs and outputs are equipped with
protection circuits against static discharge.
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2004
1/10
74LX1G32
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1
2
3
4
5
SYMBOL
1A
1B
GND
1Y
V
CC
NAME AND FUNCTION
Data Input
Data Input
Ground (0V)
Data Output
Positive Supply Voltage
TRUTH TABLE
A
L
L
H
H
B
L
H
L
H
Y
L
H
H
H
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage (V
CC
= 0V)
DC Output Voltage (High or Low State) (note 1)
DC Input Diode Current
DC Output Diode Current (note 2)
DC Output Current
Parameter
Value
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
-0.5 to V
CC
+ 0.5
- 50
- 50
±
50
±
50
-65 to +150
300
Unit
V
V
V
V
mA
mA
mA
mA
°C
°C
I
CC
or I
GND
DC V
CC
or Ground Current per Supply Pin
Storage Temperature
T
stg
T
L
Lead Temperature (10 sec)
Absolute Maximum Rating are those value beyond which damage to the device may occur. Functional operation under these condition is not
implied
1) I
O
absolute maximum rating must be observed
2) V
O
< GND, V
O
> V
CC
2/10
74LX1G32
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
V
O
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
I
OH
, I
OL
T
op
dt/dv
Supply Voltage (note 1)
Input Voltage
Output Voltage (V
CC
= 0V)
Output Voltage (High or Low State)
High or Low Level Output Current (V
CC
= 4.5 to 5.5V)
High or Low Level Output Current (V
CC
= 3.0 to 3.6V)
High or Low Level Output Current (V
CC
= 2.7 to 3.0V)
High or Low Level Output Current (V
CC
= 2.3 to 2.7V)
High or Low Level Output Current (V
CC
= 1.65 to 2.3V)
Operating Temperature
Input Rise and Fall Time (note 2)
Parameter
Value
1.65 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
±
32
±
24
±
12
±
8
±
4
-55 to 125
0 to 10
Unit
V
V
V
V
mA
mA
mA
mA
mA
°C
ns/V
1) Truth Table guaranteed: 1.2V to 3.6V
2) V
IN
from 0.8V to 2V at V
CC
= 3.0V
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
1.65 to 1.95
2.3 to 2.7
3.0 to 5.5
V
IL
Low Level Input
Voltage
1.65 to 1.95
2.3 to 2.7
3.0 to 5.5
V
OH
High Level Output
Voltage
1.65 to 4.5
1.65
2.3
3.0
4.5
V
OL
Low Level Output
Voltage
1.65 to 4.5
1.65
2.3
3.0
4.5
I
I
I
off
I
CC
Input Leakage
Current
Power Off Leakage
Current
Quiescent Supply
Current
1.65 to 5.5
0
1.65 to 5.5
I
O
=-100
µA
I
O
=-4 mA
I
O
=-8 mA
I
O
=-16 mA
I
O
=-24 mA
I
O
=-32 mA
I
O
=100
µA
I
O
=4 mA
I
O
=8 mA
I
O
=16 mA
I
O
=24 mA
I
O
=32 mA
V
I
= 0 to 5.5V
V
I
or V
O
= 5.5V
V
I
= V
CC
or GND
V
CC
-0.1
1.2
1.9
2.4
2.2
3.8
0.1
0.45
0.3
0.4
0.55
0.55
±
10
10
10
-40 to 85 °C
Min.
0.75V
CC
0.7V
CC
0.7V
CC
0.25V
CC
0.3V
CC
0.3V
CC
V
CC
-0.1
1.2
1.9
2.4
2.2
3.8
0.1
0.45
0.3
0.4
0.55
0.55
±
10
10
10
µA
µA
µA
V
V
Max.
Value
-55 to 125 °C
Min.
0.75V
CC
0.7V
CC
0.7V
CC
0.25V
CC
0.3V
CC
0.3V
CC
V
V
Max.
Unit
V
IH
High Level Input
Voltage
3/10
74LX1G32
AC ELECTRICAL CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
4.5 to 5.5
1.65 to 1.95
2.3 to 2.7
2.7
3.0 to 3.6
4.5 to 5.5
C
L
(pF)
R
L
(Ω)
t
s
=
t
r
(ns)
-40 to 85 °C
Min.
2
2
1
1
2
2
1
1
1
Max.
12.0
7.0
4.7
4.1
13.0
7.5
5.6
5.2
4.5
Value
-55 to 125 °C
Min.
2
2
1
1
2
2
1
1
1
Max.
12.0
7.0
4.7
4.1
13.0
7.5
5.6
5.2
4.5
Unit
t
PLH
t
PHL
Propagation Delay
Time
15
1MΩ
3.0
30
30
50
50
50
1000
500
500
500
500
2.0
2.0
2.5
2.5
2.5
ns
CAPACITANCE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
Value
T
A
= 25 °C
Min.
f
IN
= 10MHz
Typ.
4
1.8
2.5
3.3
20
20
21
Max.
pF
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation Capaci-
tance (note 1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
4/10
74LX1G32
TEST CIRCUIT
R
T
= Z
OUT
of pulse generator (typically 50Ω)
TEST CIRCUIT AND WAVEFORM SYMBOL VALUE
Symbol
1.65 to 1.95V
C
L
R
L
V
IH
V
M
t
r
= t
r
15pF/30pF
1MΩ/1000Ω
V
CC
V
CC
/2
<2.0ns
V
CC
2.3 to 2.7V
15pF/30pF
1MΩ/500Ω
V
CC
V
CC
/2
<2.0ns
2.7 to 5.5V
15pF/50pF
1MΩ/500Ω
V
CC
V
CC
/2
<2.5ns
WAVEFORM: PROPAGATION DELAY
(f=1MHz; 50% duty cycle)
5/10
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
