Supertex inc.
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
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Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
TN2425
General Description
Applications
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Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Part Number
TN2425N8-G
Package Option
TO-243AA (SOT-89)
Product Summary
Packing
2000/Reel
BV
DSS
/BV
DGS
25V
R
DS(ON)
(max)
(min)
I
DSS
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
3.58Ω
1.5A
Pin Configuration
Value
BV
DSS
BV
DGS
±20V
SOURCE
DRAIN
GATE
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
-55
O
C to +150
O
C
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
TO-243AA (SOT-89)
Typical Thermal Resistance
Package
TO-243AA (SOT-89)
θ
ja
133
O
C/W
Product Marking
TN4CW
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89)
Doc.# DSFP-TN2425
B080913
Supertex inc.
www.supertex.com
TN2425
Thermal Characteristics
Package
TO-243AA (SOT-89)
(continuous)
I
D
†
(pulsed)
I
D
Power Dissipation
@T
C
= 25
O
C
I
DR
†
480mA
I
DRM
1.90A
480mA
1.90A
1.6W
‡
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡
T
A
= 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate threshold voltage
A
= 25
O
C unless otherwise specified)
Min
250
0.8
-
-
-
-
0.8
1.5
-
-
-
-
500
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
105
25
7.0
5.0
10
25
5.0
-
300
Max
-
2.5
-5.5
100
10
1.0
-
-
6.0
5.0
3.5
1.7
-
200
100
40
15
25
35
15
1.5
-
Units
V
V
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 4.5V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3.0V, I
D
= 150mA
V
GS
= 4.5V, I
D
= 250mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 500mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 500mA
V
GS
= 0V, I
SD
= 500mA
Drain-to-source breakdown voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
On-state drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Ω
%/
O
C
mmho V
DS
= 25V, I
D
= 250mA
pF
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
90%
10%
t
(ON)
VDD
Pulse
Generator
R
L
OUTPUT
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
f
10%
90%
90%
R
GEN
t
d(ON)
VDD
OUTPUT
0V
Doc.# DSFP-TN2425
B080913
10%
INPUT
D.U.T.
2
Supertex inc.
www.supertex.com
TN2425
Typical Performance Curves
5
Output Characteristics
3.0
Saturation Characteristics
4
V
GS
= 10V
8V
6V
2.5
VGS = 10V
8V
6V
5V
2.0
I
D
(Amperes)
I
D
(Amperes)
3
5V
4V
1.5
2
4V
1.0
3V
1
3V
2.5V
0
10
20
30
40
50
0.5
0.0
0
2
4
6
8
10
2.5V
0
V
DS
(Volts)
V
DS
(Volts)
1.0
Transconductance vs. Drain Current
T
A
=-55
O
C
V
DS
=15V
Power Dissipation vs. Ambient Temperature
2.0
0.8
TO-243AA
1.5
T
A
=25
O
C
T
A
=125
O
C
G
FS
(siemens)
P
D
(Watts)
0.6
1.0
0.4
0.2
0.5
0.0
0.0
0.5
1.0
1.5
2.0
0.0
0
25
50
75
100
125
150
I
D
(Amperes)
T
A
(
O
C)
10
Maximum Rated Safe Operating Area
Thermal Resistance (normalized)
TO-243AA (pulsed)
1.0
Thermal Response Characteristics
TO-243AA
P
D
= 1.6W
T
C
= 25
O
C
1.0
0.8
TO-243AA (DC)
I
D
(amperes)
0.6
0.1
0.4
0.01
T
A
=25
O
C
0.001 1
0.2
10
100
1000
0
0.001
0.01
0.1
1.0
10
V
DS
(Volts)
t
p
(seconds)
Doc.# DSFP-TN2425
B080913
3
Supertex inc.
www.supertex.com
TN2425
Typical Performance Curves
(cont.)
1.2
BV
DSS
Variation with Temperature
BV @ 250µA
10
On Resistance vs. Drain Current
V
GS
= 4.5V
1.1
8.0
BV
DSS
(normalized)
R
DS(ON)
(ohms)
6.0
1.0
4.0
V
GS
= 10V
0.9
2.0
0.8
-50
0
0
50
100
150
0
1.0
2.0
3.0
4.0
5.0
T
J
(
O
C)
I
D
(amperes)
3.0
Transfer Characteristics
T
A
= 25
O
C
2.0
1.8
1.6
V
GS(TH)
and R
DS(ON)
w/ Temperature
R
DS(ON)
@ 10V, 0.5A
1.8
2.5
2.0
I
D
(amperes)
T
A
= 125
O
C
T
A
= -55
O
C
V
GS(th)
(normalized)
1.4
1.2
1.0
0.8
0.9
1.2
1.5
1.0
0.5
V
DS
= 25V
V
GS(th)
@ 1mA
0.6
0.4
-50
0.6
150
0.0
0
2
4
6
8
10
0
50
100
V
GS
(volts)
T
J
(
O
C)
200
Capacitance vs. Drain Source Voltage
f = 1MHz
10
Gate Drive Dynamic Characteristics
I
D
= 480mA
8.0
150
V
DS
= 10V
V
DS
= 40V
453pF
C (picofarads)
100
V
GS
(volts)
C
ISS
6.0
4.0
50
C
OSS
C
RSS
0
0
10
20
30
40
50
2.0
128pF
0
0
1.0
2.0
3.0
4.0
5.0
V
DS
(volts)
Q
G
(nanocoulombs)
Doc.# DSFP-TN2425
B080913
4
Supertex inc.
www.supertex.com
R
DS(ON)
(normalized)
1.5
TN2425
3-Lead TO-243AA (SOT-89) Package Outline (N8)
D
D1
C
E H
E1
L
1
2
3
b
e
e1
b1
A
Top View
Side View
Symbol
Dimensions
(mm)
MIN
NOM
MAX
A
1.40
-
1.60
b
0.44
-
0.56
b1
0.36
-
0.48
C
0.35
-
0.44
D
4.40
-
4.60
D1
1.62
-
1.83
E
2.29
-
2.60
E1
2.00
†
-
2.29
e
1.50
BSC
e1
3.00
BSC
H
3.94
-
4.25
L
0.73
†
-
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
†
This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #:
DSPD-3TO243AAN8, Version F111010.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TN2425
B080913
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Supertex inc.
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