Si4947DY
Dual P-Channel 30-V (D-S) Rated MOSFET
Product Summary
V
DS
(V)
–30
30
r
DS(on)
(W)
0.085 @ V
GS
= –10 V
0.19 @ V
GS
= –4.5 V
I
D
(A)
"3.5
"2.5
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Absolute Maximum Ratings (
T
A
= 25_C Unless Otherwise Noted
)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
150 C)
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Limit
–30
"20
"3.5
"2.8
"20
–1.7
2.0
1.3
–55 to 150
Unit
V
A
W
_C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70156.
A SPICE Model data sheet is available for this product (FaxBack document #70554).
Symbol
R
thJA
Limit
62.5
Unit
_C/W
Siliconix
S-49520—Rev. C, 18-Dec-96
1
Si4947DY
Specifications (T
J
= 25_C Unless Otherwise Noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On State
Drain Source On-State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= –30 V, V
GS
= 0 V
V
DS
= –30 V, V
GS
= 0 V, T
J
= 55_C
V
DS
w
–5 V, V
GS
= –10 V
V
GS
= –10 V, I
D
= 2.5 A
V
GS
= –4.5 V, I
D
= 1.8 A
V
DS
= –15 V, I
D
= –2.5 A
I
S
= –1.7 A, V
GS
= 0 V
–15
0.066
0.125
5.0
–0.8
–1.2
0.085
0.19
1.0
"100
–1
–25
V
nA
mA
A
W
S
V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –1.7 A, di/dt = 100 A/ms
V
DD
= –10 V, R
L
= 10
W
I
D
^
–1 A, V
GEN
= –10 V, R
G
= 6
W
V
DS
= –10 V, V
GS
= –10 V, I
D
= –2.5 A
8.7
1.9
1.3
7
9
14
8
50
15
18
27
15
80
ns
15
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
2
Siliconix
S-49520—Rev. C, 18-Dec-96
Si4947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Output Characteristics
20
V
GS
= 10, 9, 8, 7, 6 V
16
I
D
– Drain Current (A)
I
D
– Drain Current (A)
5V
12
16
20
T
C
= –55_C
25_C
125_C
12
Transfer Characteristics
8
4V
4
3V
0
0
2
4
6
8
8
4
0
0
2
4
6
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.40
700
600
r
DS(on)
– On-Resistance (
W
)
0.32
C – Capacitance (pF)
500
400
300
Capacitance
C
iss
0.24
V
GS
= 4.5 V
0.16
V
GS
= 10 V
C
oss
200
100
C
rss
0.08
0
0
3
6
9
12
15
I
D
– Drain Current (A)
0
0
6
12
18
24
30
V
DS
– Drain-to-Source Voltage (V)
10
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 2.5 A
Gate Charge
2.0
1.8
r
DS(on)
– On-Resistance (
W
)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 2.5 A
8
6
4
2
0
0
2
4
6
8
10
0.4
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Siliconix
S-49520—Rev. C, 18-Dec-96
3
Si4947DY
Typical Characteristics (25_C Unless Otherwise Noted)
Source-Drain Diode Forward Voltage
20
0.5
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
10
r
DS(on)
– On-Resistance (
W
)
0.4
0.3
I
D
= 2.5 A
0.2
T
J
= 150_C
T
J
= 25_C
0.1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
– Source-to-Drain Voltage (V)
0
0
2
4
6
8
10
V
GS
– Gate-to-Source Voltage (V)
0.8
0.6
V
GS(th)
Variance (V)
0.4
0.2
0.0
–0.2
–0.4
–50
Threshold Voltage
Single Pulse Power
30
25
I
D
= 250
mA
Power (W)
–25
0
25
50
75
100
125
150
20
15
10
5
0
0.01
0.1
1
Time (sec)
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 62.5_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
Square Wave Pulse Duration (sec)
4
Siliconix
S-49520—Rev. C, 18-Dec-96
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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