VS-80APS..PbF Series, VS-80APS..-M3 Series
www.vishay.com
Vishay Semiconductors
High Voltage, Input Rectifier Diode, 80 A
Base
cathode
+
2
FEATURES
• Very low forward voltage drop
• 150 °C max. operating junction temperature
• Glass passivated pellet chip junction
• Designed and qualified
JEDEC
®
-JESD 47
according
to
3
2
1
1
Anode -
3
- Anode
TO-247AC
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Diode variation
TO-247AC
80 A
800 V to 1200 V
1.17 V
1500 A
150 °C
Single die
APPLICATIONS
• Input rectification
• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines
DESCRIPTION
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
80 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
Range
VALUES
80
800/1200
1500
1.17
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-80APS08PbF, VS-80APS08-M3
VS-80APS12PbF, VS-80APS12-M3
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I
RRM
AT 150 °C
mA
1.5
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 100 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no
voltage
reapplied
t = 0.1 ms to 10 ms, no
voltage
reapplied
VALUES
80
1450
1500
10 500
14 000
140 000
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 93794
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80APS..PbF Series, VS-80APS..-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward
voltage
drop
Forward slope resistance
Threshold
voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
80 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.17
3.17
0.73
0.1
1.5
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-247AC (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to 150
0.35
40
0.2
6
0.21
6 (5)
12 (10)
80APS08
80APS12
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
150
150
Maximum Allowable Case
Temperture (°C)
Maximum Allowable Case
Temperature (°C)
140
130
120
110
VS-80APS..
Series
R
thJC
(DC) = 0.35 K/W
140
130
120
110
100
90
VS-80APS..
Series
R
thJC
(DC) = 0.35 K/W
Ø
Conduction angle
Ø
Conduction period
30°
60°
90°
120°
180°
DC
30°
100
90
80
60°
90°
120°
180°
0
10
20
30
40
50
60
70
80
90
0
20
40
60
80
100
120
140
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Revision: 11-Feb-16
Document Number: 93794
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80APS..PbF Series, VS-80APS..-M3 Series
www.vishay.com
Vishay Semiconductors
1600
120
Maximum Average Forward
Power Loss (W)
100
80
60
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
1400
1200
1000
800
600
400
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Ø
40
20
0
Conduction angle
VS-80APS..
Series
T
J
= 150 °C
VS-80APS..
Series
0
10
20
30
40
50
60
70
80
90
1
10
100
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
160
Maximum Average Forward
Power Loss (W)
140
120
100
80
60
40
20
0
Peak Half Sine Wave
Forward Current (A)
DC
180°
120°
90°
60°
30°
RMS limit
Ø
1600
1400
1200
1000
800
600
400
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 150°C
No voltage reapplied
Rated V
rrm
reapplied
Conduction period
VS-80APS..
Series
T
J
= 150 °C
VS-80APS..
Series
200
0.01
0.1
1
10
0
20
40
60
80
100
120
140
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous Forward Current (A)
1000
100
T
J
= 25 °C
10
T
J
= 150 °C
VS-80APS..
Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 11-Feb-16
Document Number: 93794
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-80APS..PbF Series, VS-80APS..-M3 Series
www.vishay.com
1
Vishay Semiconductors
Steady state value
(DC operation)
Z
thJC
- Transient Thermal
Impedance (°C/W)
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
VS-80APS..
Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
80
2
A
3
P
4
S
5
12
6
PbF
Vishay Semiconductors product
Current rating (80 = 80 A)
Circuit configuration:
A = single diode, 3 pins
Package:
P = TO-247AC
Type of silicon:
S = standard recovery rectifier
Voltage ratings
Environmental digit:
PbF = lead (Pb)-free and RoHS-compliant
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
08 = 800 V
12 = 1200 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-80APS08PbF
VS-80APS08-M3
VS-80APS12PbF
VS-80APS12-M3
QUANTITY PER T/R
25
25
25
25
MINIMUM ORDER QUANTITY
500
500
500
500
PACKAGING DESCRIPTION
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
TO-247AC modified PbF
TO-247AC modified -M3
www.vishay.com/doc?95542
www.vishay.com/doc?95226
www.vishay.com/doc?95007
www.vishay.com/doc?95550
Revision: 11-Feb-16
Document Number: 93794
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AC - 50 mils L/F
DIMENSIONS
in millimeters and inches
(3)
B
(2) R/2
Q
2xR
(2)
1
(5) L1
C
L
See view B
2 x b2
3xb
0.10
M
C A
M
2x e
b4
A1
C
A
(4)
E1
0.01
M
D B
M
View A - A
2
3
E
S
A2
A
D2
A
(6)
Φ
P
Ø K
M
DB
M
A
(Datum B)
Φ
P1
D
D
Thermal pad
4
D1 (4)
Plating
(b1, b3, b5)
Base metal
D DE
E
C
C
(c)
c1
(b, b2, b4)
(4)
Section C - C, D - D, E - E
View B
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.17
1.37
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.046
0.054
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
NOTES
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
3
4
MILLIMETERS
MIN.
MAX.
0.51
1.35
15.29
15.87
13.46
-
5.46 BSC
0.254
14.20
16.10
3.71
4.29
3.56
3.66
-
7.39
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.053
0.602
0.625
0.53
-
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.14
0.144
-
0.291
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5M-1994
(2)
Contour of slot optional
(3)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4)
Thermal pad contour optional with dimensions D1 and E1
(5)
Lead finish uncontrolled in L1
(6)
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7)
Outline conforms to JEDEC
®
outline TO-247 with exception of dimension c and Q
Revision: 20-Apr-17
Document Number: 95542
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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