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MUN2137T1G: 产品描述Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP; 产品类别分立半导体晶体管; 文件大小113KB，共12页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn

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MUN2137T1G概述

Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP

MUN2137T1G规格参数

参数名称	属性值
Brand Name	ON Semiconductor
是否无铅	不含铅
厂商名称	ON Semiconductor(安森美)
零件包装代码	SC-59
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
制造商包装代码	318D-04
Reach Compliance Code	compliant
ECCN代码	EAR99
Factory Lead Time	8 weeks
Is Samacsys	N
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 0.47
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80
JESD-30 代码	R-PDSO-G3
JESD-609代码	e3
湿度敏感等级	1
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	PNP
最大功率耗散 (Abs)	0.338 W
认证状态	Not Qualified
表面贴装	YES
端子面层	Tin (Sn)
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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MUN2113, MMUN2113L,

MUN5113, DTA144EE,

DTA144EM3, NSBA144EF3

Digital Transistors (BRT)

R1 = 47 kW, R2 = 47 kW

PNP Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

Features

PIN 1

BASE

(INPUT)

www.onsemi.com

PIN CONNECTIONS

PIN 3

COLLECTOR

(OUTPUT)

PIN 2

EMITTER

(GROUND)

•

MARKING DIAGRAMS

SC−59

CASE 318D

STYLE 1

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101 Qualified

and PPAP Capable

•

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

= 25°C)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Input Reverse Voltage

Symbol

CBO

CEO

IN(fwd)

IN(rev)

Max

100

Unit

Vdc

mAdc

Vdc

XX MG

XXX MG

SOT−23

CASE 318

STYLE 6

XX MG

XX M

XM 1

XXX

SC−70/SOT−323

CASE 419

STYLE 3

SC−75

CASE 463

STYLE 1

SOT−723

CASE 631AA

STYLE 1

SOT−1123

CASE 524AA

STYLE 1

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

= Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending up-

on manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2015

January, 2015 − Rev. 4

Publication Order Number:

DTA144E/D

MUN2137T1G相似产品对比

	MUN2137T1G	DTA114YET1	DTA114EET1	DTA143TET1	DTA123JET1	MUN2131T1G	DTA123EET1	DTA114TET1	MUN2134T1G	MUN2114T1
描述	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP	Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
厂商名称	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)	ON Semiconductor(安森美)
零件包装代码	SC-59	SC-75	SC-75	SC-75	SC-75	SC-59	SC-75	SC-75	SC-59	SC-59
包装说明	SMALL OUTLINE, R-PDSO-G3	CASE 463-01, SC-75, 3 PIN	CASE 463-01, SC-75, 3 PIN	CASE 463-01, SC-75, 3 PIN	CASE 463-01, SC-75, 3 PIN	SMALL OUTLINE, R-PDSO-G3	CASE 463-01, SC-75, 3 PIN	CASE 463-01, SC-75, 3 PIN	SMALL OUTLINE, R-PDSO-G3	PLASTIC, CASE 318D-04, SC-59, 3 PIN
针数	3	3	3	3	3	3	3	3	3	3
制造商包装代码	318D-04	CASE 463-01	CASE 463-01	CASE 463-01	CASE 463-01	318D-04	CASE 463-01	CASE 463-01	318D-04	CASE 318D-04
Reach Compliance Code	compliant	not_compliant	not_compliant	not_compliant	not_compliant	compliant	not_compliant	not_compliant	compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 4.7	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR RATIO IS 21.36	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR RATIO IS 1	BUILT-IN BIAS RESISTOR	BUILT-IN BIAS RESISTOR RATIO IS 2.14	BUILT-IN BIAS RESISTOR RATIO IS 4.7
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	80	80	35	160	80	8	8	80	80	80
JESD-30 代码	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e3	e0	e0	e0	e0	e3	e0	e0	e3	e0
元件数量	1	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
峰值回流温度（摄氏度）	260	240	240	240	240	260	240	240	260	240
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
最大功率耗散 (Abs)	0.338 W	0.3 W	0.3 W	0.3 W	0.3 W	0.338 W	0.3 W	0.3 W	0.338 W	0.2 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子面层	Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin (Sn)	Tin/Lead (Sn80Pb20)
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
处于峰值回流温度下的最长时间	40	30	30	30	30	40	30	30	40	30
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
湿度敏感等级	1	1	1	1	1	1	1	1	1	-
是否Rohs认证	-	不符合	不符合	不符合	不符合	-	不符合	不符合	-	不符合

MUN2137T1G

MUN2137T1G在线购买

MUN2137T1G概述

MUN2137T1G规格参数

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MUN2137T1G相似产品对比

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