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MJL4281A

产品描述Bipolar Transistors - BJT 15A 350V 230W NPN
产品类别分立半导体    晶体管   
文件大小100KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJL4281A概述

Bipolar Transistors - BJT 15A 350V 230W NPN

MJL4281A规格参数

参数名称属性值
Brand NameON Semiconductor
是否无铅含铅
厂商名称ON Semiconductor(安森美)
零件包装代码TO-264AA
包装说明CASE 340G-02, TO-3PBL, 3 PIN
针数3
制造商包装代码340G-02
Reach Compliance Codenot_compliant
ECCN代码EAR99
最大集电极电流 (IC)15 A
集电极-发射极最大电压350 V
配置SINGLE
最小直流电流增益 (hFE)10
JEDEC-95代码TO-264AA
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)240
极性/信道类型NPN
最大功率耗散 (Abs)230 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间30
晶体管应用AMPLIFIER
晶体管元件材料SILICON
标称过渡频率 (fT)35 MHz

文档预览

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MJL4281A (NPN)
MJL4302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are power transistors for high
power audio.
Features
http://onsemi.com
350 V Collector−Emitter Sustaining Voltage
Gain Complementary:
Gain Linearity from 100 mA to 5 A
High Gain
80 to 240
h
FE
= 50 (min) @ I
C
= 8 A
Low Harmonic Distortion
High Safe Operation Area
1.0 A/100 V @ 1 Second
High f
T
Pb−Free Packages are Available*
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
350 VOLTS, 230 WATTS
1
2
3
TO−264
CASE 340G
STYLE 2
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector−Emitter Voltage
1.5 V
Collector Current
Continuous
Collector Current
Peak (Note 1)
Base Current
Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
350
350
5.0
350
15
30
1.5
230
1.84
65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
°C/W
°C
xxx
A
YY
WW
G
1 BASE
MARKING DIAGRAM
MJL4xxxA
AYYWWG
3 EMITTER
2 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
0.54
Unit
°C/W
= 281 or 302
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
ORDERING INFORMATION
Device
MJL4281A
MJL4281AG
MJL4302A
Package
TO−264
TO−264
(Pb−Free)
TO−264
TO−264
(Pb−Free)
Shipping
25 Units/Rail
25 Units/Rail
25 Units/Rail
25 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MJL4302AG
©
Semiconductor Components Industries, LLC, 2013
June, 2013
Rev. 3
1
Publication Order Number:
MJL4281A/D

MJL4281A相似产品对比

MJL4281A MJL4302A
描述 Bipolar Transistors - BJT 15A 350V 230W NPN Bipolar Transistors - BJT 15A 350V 230W PNP
Brand Name ON Semiconductor ON Semiconductor
是否无铅 含铅 含铅
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 TO-264AA TO-264AA
包装说明 CASE 340G-02, TO-3PBL, 3 PIN CASE 340G-02, TO-3PBL, 3 PIN
针数 3 3
制造商包装代码 340G-02 340G-02
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
最大集电极电流 (IC) 15 A 15 A
集电极-发射极最大电压 350 V 350 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 10 10
JEDEC-95代码 TO-264AA TO-264AA
JESD-30 代码 R-PSFM-T3 R-PSFM-T3
JESD-609代码 e0 e0
元件数量 1 1
端子数量 3 3
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 240 240
极性/信道类型 NPN PNP
最大功率耗散 (Abs) 230 W 230 W
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 30 30
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 35 MHz 35 MHz

 
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