VS-SD303C..C Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 350 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
High power fast recovery diode series
1.0 μs to 2.0 μs recovery time
High voltage ratings up to 2500 V
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Press PUK encapsulation
Case style conform to JEDEC
®
A-PUK (DO-200AA)
Maximum junction temperature 125 °C
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
A-PUK (DO-200AA)
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
350 A
A-PUK (DO-200AA)
Single
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
t
rr
T
J
TEST CONDITIONS
VS-SD303C..C
S10
350
T
hs
T
hs
50 Hz
60 Hz
50 Hz
60 Hz
Range
T
J
55
550
25
5770
6040
166
152
400 to 1000
1.0
25
-40 to +125
S15
350
55
550
25
5770
6040
166
152
1200 to 1600
1.5
25
-40 to +125
S20
350
55
550
25
5770
6040
166
152
2000 to 2500
2.0
25
-40 to +125
UNITS
A
°C
A
°C
A
kA
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
VS-SD303C..S10C
08
10
12
VS-SD303C..S15C
14
16
VS-SD303C..S20C
20
25
V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
400
800
1000
1200
1400
1600
2000
2500
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
500
900
1100
1300
1500
1700
2100
2600
35
I
RRM
MAXIMUM
AT T
J
= 125 °C
mA
Revision: 15-Jan-18
Document Number: 93174
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD303C..C Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
F(RMS)
TEST CONDITIONS
180° conduction, half sine wave
Double side (single side) cooled
25 °C heatsink temperature double side cooled
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
VALUES
350 (175)
55 (75)
550
5770
6040
4850
5080
166
152
117
107
1660
1.14
1.63
1.14
0.77
2.26
kA
2
s
V
mW
V
kA
2
s
A
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at heatsink temperature
Maximum RMS current
Maximum peak, one-cycle ,
non-repetitive forward current
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1100 A, T
J
= 25 °C; t
p
= 10 ms sinusoidal wave
Low level value of threshold voltage
High level value of threshold voltage
Low level of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
(μs)
1.0
1.5
2.0
750
25
- 30
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
V
r
(V)
TYPICAL VALUES
AT T
J
= 125 °C
t
rr
AT 25 % I
RRM
(μs)
2.4
2.9
3.2
Q
rr
(μC)
52
90
107
I
rr
(A)
33
44
46
I
FM
t
rr
t
Q
rr
I
RM(REC)
S10
S15
S20
dir
dt
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.16
0.08
4900 (500)
70
UNITS
°C
K/W
N (kg)
g
A-PUK (DO-200AA)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.010
0.012
0.016
0.024
0.042
DOUBLE SIDE
0.011
0.013
0.016
0.024
0.042
RECTANGULAR CONDUCTION
SINGLE SIDE
0.008
0.013
0.018
0.025
0.042
DOUBLE SIDE
0.008
0.013
0.018
0.025
0.042
TEST CONDITIONS
UNITS
T
J
= T
J
maximum
K/W
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 15-Jan-18
Document Number: 93174
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD303C..C Series
www.vishay.com
Vishay Semiconductors
130
Maximum Allow able Heatsink Temperature (°C)
120
110
100
90
80
70
60
50
40
0
100
200
300
400
500
600
Average Forwa rd Curren t (A)
30°
60°
90°
120°
180°
DC
C o ndu c tio n Pe rio d
130
Maxim um Allow able Heatsink Tem perature (°C)
120
110
100
90
80
70
60
0
20
40
60
SD303C..C Series
(Sin gle Side Cooled)
R
th J-hs
(DC) = 0.16 K/W
SD303C..C Series
(D ouble Side Cooled)
R
th J- hs
(DC) = 0.08 K/W
C o nduc tio n A ng le
180°
30°
60°
90°
120°
80 100 120 140 160 180
Averag e Forw ard Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
1 30
M a x im um A llo w a b le H ea t sin k T e m p e ra t u re (° C )
M a x im u m A v e ra g e F o rw a rd P o w e r Lo ss (W )
1 20
1 10
1 00
90
80
70
60
50
0
50
10 0
150
2 00
250
3 00
A v e ra g e F o r w a rd C u rre n t (A )
30°
60°
90°
120°
180°
DC
C o ndu c tio n P e rio d
8 00
S D 3 0 3 C ..C S e rie s
(S in g le Sid e C o o le d )
R
thJ-hs
(D C ) = 0 .1 6 K /W
7 00
6 00
5 00
4 00
3 00
C o nduc tio n An g le
1 8 0°
1 2 0°
90°
60°
30°
R M S Lim it
2 00
1 00
0
0
50
1 0 0 1 5 0 20 0 25 0 30 0 3 5 0 4 00
A v e ra g e F o rw a rd C u rre n t (A )
SD 3 0 3 C ..C Se rie s
T
J
= 1 2 5°C
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
130
Maxim um Allow able Heatsink Tem perature (°C)
120
110
100
90
80
70
60
50
40
0
50
M a xim u m A v e r a ge Fo rw a rd Po w e r Lo ss (W )
SD303C..C Series
(D ouble Side Cooled)
R
thJ-h s
(DC) = 0.08 K/W
1 00 0
9 00
8 00
7 00
6 00
DC
1 8 0°
1 2 0°
90°
60°
30°
C o nduc tio n A ng le
5 0 0 R M S Lim it
4 00
3 00
2 00
1 00
0
0
100
2 00
3 00
400
5 00
6 00
A v e ra g e Fo rw a rd C u r re n t (A )
SD 3 0 3 C ..C Se rie s
T
J
= 1 2 5°C
C o ndu ct io n Pe rio d
30°
60°
90°
120°
180°
100 150 200 250 300 350 400
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
Fig. 6 - Forward Power Loss Characteristics
Revision: 15-Jan-18
Document Number: 93174
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD303C..C Series
www.vishay.com
Vishay Semiconductors
10000
SD 3 0 3 C ..C Se r ie s
In st a n t a n e o u s Fo rw a rd C urre n t (A )
55 0 0
P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A )
50 0 0
45 0 0
40 0 0
35 0 0
30 0 0
25 0 0
20 0 0
1
A t A n y Ra t e d Lo a d C o n d it io n A n d W ith
R a t e d V
RRM
A p p lie d F o llo w in g Su rg e .
In itia l T
J
= 1 2 5°C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
1 000
100
T
J
= 2 5 ° C
T
J
= 1 2 5 ° C
SD 3 0 3 C ..C Se r ie s
10
1 00
10
0
1
2
3
4
5
6
7
8
In sta n t a n e o us Fo rw a rd V o lta g e (V )
N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulses (N )
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
6000
P e a k H a lf Sine W a v e Fo rw a rd C urr e n t (A )
5500
5000
4500
4000
3500
3000
2500
2000
M a x im u m N o n R e p e t itiv e S u rg e C u rre n t
V e r su s P u lse T ra in D u ra t io n .
In itia l T
J
= 1 2 5 ° C
N o V o lt a g e R e a p p lie d
R a t e d V
RR M
e a p p lie d
R
1
(K / W )
St e a d y S ta t e V a lu e
R
thJ-hs
= 0 .1 6 K / W
( Sin g le Sid e C o o le d)
0 .1
R
thJ-h s
= 0 .0 8 K / W
( D o u b le S id e C o o le d )
( D C O p e ra tio n )
T ra n sie n t T h e rm a l I m p e d a n c e Z
thJ-hs
0 .0 1
SD 3 0 3 C ..C Se rie s
0 .0 0 1
0 .0 0 0 1 0 .0 0 1
S D 3 0 3 C ..C Se rie s
0.1
P u lse T ra in D u ra t io n (s)
1
1500
0.01
0 .0 1
0 .1
1
10
10 0
Sq u a re W a v e Pu lse D ur at io n ( s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristic
1 20
V
1 00
F o rw a rd R e c o v e ry ( V )
80
FP
I
T = 1 2 5°C
J
60
T
J
= 2 5°C
40
20
S D 3 0 3 C ..S2 0 C Se rie s
0
0
20 0
40 0
600
8 00
10 0 0
12 00
1 40 0
1 60 0
18 0 0
200 0
R at e O f f F a ll O f F o rw a rd C u rre n t d i/ d t ( A / u se c )
Fig. 11 - Typical Forward Recovery Characteristics
Revision: 15-Jan-18
Document Number: 93174
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD303C..C Series
www.vishay.com
Vishay Semiconductors
3 .6
M a x im u m R e v e rse R e c o v e ry T im e - T rr ( µ s)
2 .8
M a xim um R e ve rse R e c o v e ry T im e - Trr ( µ s)
2 .6
2 .4
2 .2
SD 3 0 3 C ..S1 0 C Se rie s
T
J
= 1 2 5 °C , V r = 3 0 V
I
FM
= 750 A
Squ are Pu lse
SD 3 0 3 C ..S 1 5 C S e rie s
T
J
= 1 2 5 °C , V r = 3 0 V
3 .2
I
FM
= 75 0 A
2 .8
Sq ua re Pulse
2 .4
4 00 A
2
1 .8
4 00 A
2
20 0 A
200 A
1 .6
10
100
1 .6
10
100
R ate O f Fall O f Fo rwa rd C urre nt - di/dt (A /µs)
R ate O f Fa ll O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 12 - Recovery Time Characteristics
Fig. 15 - Recovery Time Characteristics
14 0
M a x im um Re v e rse R e c o v e ry C h a rg e - Q rr ( µ C )
170
M a xim u m R e v e rse R e co v e ry C h a rg e - Q r r ( µ C )
I
FM
= 750 A
Squ are Pulse
13 0
12 0
11 0
10 0
90
80
70
60
50
40
30
20
10
0
20
40
160
150
140
130
120
110
100
90
80
70
60
50
I
FM
= 75 0 A
Squa re Pulse
40 0 A
4 00 A
20 0 A
20 0 A
S D 3 0 3 C ..S 1 0 C Se rie s
T
J
= 1 2 5 °C , V r = 3 0 V
60
80
100
SD 3 0 3C ..S 1 5 C S e rie s
T
J
= 1 2 5 ° C , V r = 3 0 V
10 20 30 4 0 50 60 70 80 9 0 100
Ra te O f Fall O f Fo rw ard Cu rrent - d i/dt (A /µs)
Rate O f Fa ll O f Fo rw ard Current - di/dt (A /µs)
Fig. 13 - Recovery Charge Characteristics
Fig. 16 - Recovery Charge Characteristics
1 00
M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr ( A )
M a xim u m R e v e rse R e c o v e ry C u rre n t - Irr (A )
I
FM
= 75 0 A
1 30
Square Pulse
4 00 A
90
80
70
60
50
40
30
20
1 20
1 10
1 00
90
80
70
60
50
40
30
20
10
I
FM
= 7 50 A
Sq uare Pu lse
20 0 A
4 00 A
20 0 A
SD 3 0 3 C ..S1 0 C Se rie s
T
J
= 1 2 5 °C , V r = 3 0 V
20 30 40 5 0 60 70 80 90 10 0
SD 3 0 3 C ..S1 5 C Se rie s
T
J
= 1 2 5 ° C , V r = 3 0 V
1 0 20 30 40 50 60 70 80 90 1 00
Rate O f Fall O f Fo rwa rd Curre n t - di/d t (A/µs)
R ate O f Fall O f Fo rw ard Cu rre nt - di/d t (A/µs)
Fig. 14 - Recovery Current Characteristics
Fig. 17 - Recovery Current Characteristics
Revision: 15-Jan-18
Document Number: 93174
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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