NYC008-6JG
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, line-powered consumer
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-226AA package which is
readily adaptable for use in automatic insertion equipment.
Features
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SCRs
0.8 A RMS
600 V
G
A
K
•
Sensitive Gate Allows Triggering by Microcontrollers and Other
•
•
•
•
•
•
•
Logic Circuits
Blocking Voltage to 600 V
On−State Current Rating of 0.8 A RMS at 80°C
High Surge Current Capability
−
10 A
Minimum and Maximum Values of IGT, VGT and IH Specified
for Ease of Design
Immunity to dV/dt
−
50 V/msec Minimum at 110°C
Glass-Passivated Surface for Reliability and Uniformity
These are Pb−Free Devices
TO−92
CASE 29
STYLE 10
12
1
2
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
NYC
008−6
AYWWG
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
2
3
Cathode
Gate
Anode
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2010
January, 2010
−
Rev. 0
1
Publication Order Number:
NYC008−6JG/D
NYC008−6JG
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Notes 1 and 2)
(T
J
=
*40
to 110°C, Sine Wave, 50 to 60 Hz; R
GK
= 1 kW)
On-State RMS Current, (T
C
= 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T
J
= 25°C)
Circuit Fusing Consideration, (t = 8.3 ms)
Forward Peak Gate Power, (T
A
= 25°C, Pulse Width
v
1.0
m
s)
Forward Average Gate Power, (T
A
= 25°C, t = 8.3 ms)
Forward Peak Gate Current, (T
A
= 25°C, Pulse Width
v
1.0
m
s)
Reverse Peak Gate Voltage, (T
A
= 25°C, Pulse Width
v
1.0
m
s)
Operating Junction Temperature Range @ Rate V
RRM
and V
DRM
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
V
GRM
T
J
T
stg
Value
600
0.8
10
0.415
0.1
0.10
1.0
5.0
−40
to 110
−40
to 150
Unit
V
A
A
A
2
s
W
W
A
V
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
2. See ordering information for exact device number options.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,Junction−to−Case
Junction−to−Ambient
Lead Solder Temperature
(t1/16″ from case, 10 secs max)
Symbol
R
qJC
R
qJA
T
L
Max
75
200
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
I
DRM
, I
RRM
Min
Max
Unit
mA
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current (Note 3)
T
C
= 25°C
(V
D
= Rated V
DRM
and V
RRM
; R
GK
= 1 kW)
T
C
= 110°C
−
−
−
−
−
−
−
−
−
−
50
−
10
100
1.7
200
5.0
10
10
15
0.8
1.2
−
50
ON CHARACTERISTICS
Peak Forward On−State Voltage
*
(I
TM
= 1.0 A Peak @ T
A
= 25°C)
Gate Trigger Current (Note 4)
(V
AK
= 7.0 Vdc, R
L
= 100
W)
T
C
= 25°C
V
TM
I
GT
I
H
I
L
V
GT
V
mA
mA
mA
V
Holding Current (Note 3)
T
C
= 25°C
(V
AK
= 7.0 Vdc, Initiating Current = 20 mA, R
GK
= 1 kW) T
C
=
−40°C
Latch Current (Note 4)
(V
AK
= 7.0 V, Ig = 200
mA)
Gate Trigger Voltage (Note 4)
(V
AK
= 7.0 Vdc, R
L
= 100
W)
T
C
= 25°C
T
C
=
−40°C
T
C
= 25°C
T
C
=
−40°C
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform, R
GK
= 1 kW,T
J
= 110°C)
Critical Rate of Rise of On−State Current
(I
PK
= 20 A; Pw = 10
msec;
diG/dt = 1 A/msec, Igt = 20 mA)
*Indicates Pulse Test: Pulse Width
≤
1.0 ms, Duty Cycle
≤
1%.
3. R
GK
= 1000
W
included in measurement.
4. Does not include R
GK
in measurement.
dV/dt
di/dt
V/ms
A/ms
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2
NYC008−6JG
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
on state
I
RRM
at V
RRM
I
H
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak on State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode
−
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
100
GATE TRIGGER VOLTAGE (VOLTS)
95
110
GATE TRIGGER CURRENT (
m
A)
90
80
70
60
50
40
30
20
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
0.85
0.8
0.75
0.7
0.65
0.6
0.55
0.5
0.45
0.4
0.35
−40 −25 −10
5
20 35 50
65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
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3
NYC008−6JG
3.0
2.8
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
LATCHING CURRENT (mA)
95
110
HOLDING CURRENT (mA)
2.6
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
−40 −25 −10
5
20 35 50 65 80
T
J
, JUNCTION TEMPERATURE (°C)
95
110
Figure 3. Typical Holding Current versus
Junction Temperature
Figure 4. Typical Latching Current versus
Junction Temperature
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (
°
C)
120
110
100
90
80
70
60
50
40
0
30°
60°
90°
120°
0.5
180°
DC
I T, INSTANTANEOUS ON-STATE CURRENT (AMPS)
10
MAXIMUM @ T
J
= 25°C
MAXIMUM @ T
J
= 110°C
1
0.1
0.2
0.3
0.4
I
T(RMS)
, RMS ON-STATE CURRENT (AMPS)
0.1
0.5
0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5
V
T
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 5. Typical RMS Current Derating
Figure 6. Typical On−State Characteristics
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4
NYC008−6JG
ORDERING INFORMATION
Device
NYC008−6JG
NYC008−6JRLRAG
NYC008−6JRLREG
TO−92 (TO−226)
(Pb−Free)
Package Code
Shipping
†
5000 Units / Box
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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