IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
DISCRETE SEMICONDUCTORS
DATA SHEET
BTA216B series B
Triacs
high commutation
Product
specification
October 1997
1;3
Semiconductors
Product specification
Triacs
high commutation
GENERAL DESCRIPTION
Glass passivated high commutation
triacs in a plastic envelope suitable
for surface mounting, intended for use
in circuits where high static and
dynamic dV/dt and high dI/dt can
occur. These devices will commutate
the full rated rms current at the
maximum rated junction temperature,
without the aid of a snubber.
BTA216B series B
QUICK REFERENCE DATA
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
BTA216B-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX. MAX. MAX. UNIT
500B
500
16
140
600B
600
16
140
800B
800
16
140
V
A
A
PINNING - SOT404
PIN
1
2
3
mb
DESCRIPTION
main terminal 1
main terminal 2
gate
main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2
1
3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
≤
99 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 20 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/μs
CONDITIONS
MIN.
-
-
-500
500
1
MAX.
-600
600
1
16
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
140
150
98
100
2
5
5
0.5
150
125
A
A
A
2
s
A/μs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
October 1997
1
Rev 1.100
1;3
Semiconductors
Product specification
Triacs
high commutation
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
CONDITIONS
BTA216B series B
MIN.
-
-
-
TYP.
-
-
55
MAX.
1.2
1.7
-
UNIT
K/W
K/W
K/W
Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
minimum footprint, FR4 board
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
I
GT
PARAMETER
Gate trigger current
2
CONDITIONS
V
D
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
T2+ G+
T2+ G-
T2- G-
MIN.
2
2
2
-
-
-
-
-
-
0.25
-
TYP.
18
21
34
31
34
30
31
1.2
0.7
0.4
0.1
MAX.
50
50
50
60
90
60
60
1.5
1.5
-
0.5
UNIT
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
I
L
Latching current
V
D
= 12 V; I
GT
= 0.1 A
I
H
V
T
V
GT
I
D
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
V
D
= 12 V; I
GT
= 0.1 A
I
T
= 20 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A; T
j
= 125 ˚C
V
D
= V
DRM(max)
; T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
dI
com
/dt
t
gt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
CONDITIONS
V
DM
= 67% V
DRM(max)
; T
j
= 125 ˚C;
exponential waveform; gate open circuit
V
DM
= 400 V; T
j
= 125 ˚C; I
T(RMS)
= 16 A;
without snubber; gate open circuit
I
TM
= 20 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/μs
MIN.
1000
-
-
TYP.
4000
28
2
MAX.
-
-
-
UNIT
V/μs
A/ms
μs
2
Device does not trigger in the T2-, G+ quadrant.
October 1997
2
Rev 1.100
1;3
Semiconductors
Product specification
Triacs
high commutation
BTA216B series B
25
Ptot / W
BT139
Tmb(max) / C
= 180
95
20
IT(RMS) / A
BT139
20
1
120
90
101
99 C
15
15
60
30
107
10
113
10
5
5
119
0
0
5
10
IT(RMS) / A
15
125
20
0
-50
0
50
Tmb / C
100
150
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
ITSM / A
BTA216
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
BT139
1000
50
IT(RMS) / A
40
dI
T
/dt limit
100
30
20
IT
T
10
10us
I TSM
time
10
Tj initial = 25 C max
100us
1ms
T/s
10ms
100ms
0
0.01
0.1
1
surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
ITSM / A
BT139
IT
T
100
ITSM
time
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤
99˚C.
VGT(Tj)
VGT(25 C)
150
1.6
1.4
1.2
1
BT136
Tj initial = 25 C max
50
0.8
0.6
0
1
10
100
Number of cycles at 50Hz
1000
0.4
-50
0
50
Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25˚C), versus junction temperature T
j
.
October 1997
3
Rev 1.100
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