VS-201CNQ045PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 200 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• 175 °C T
J
operation
• Center tap module
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• UL approved file E222165
TO-244
Base common cathode
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
Package
Circuit configuration
200 A
45 V
TO-244
Two diodes common cathode
DESCRIPTION / APPLICATIONS
The VS-201CNQ045PbF center tap Schottky rectifier
module has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, converters, freewheeling diodes, welding, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
100 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
200
45
16 000
0.58
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-201CNQ045PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per device
I
F(AV)
per leg
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 17 A, L = 1 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated
load condition and with
rated V
RRM
applied
50 % duty cycle at T
C
= 146 °C, rectangular waveform
100
16 000
A
2000
145
20
mJ
A
SYMBOL
TEST CONDITIONS
VALUES
200
A
UNITS
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
Revision: 09-May-17
Document Number: 94154
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-201CNQ045PbF
www.vishay.com
Vishay Semiconductors
SYMBOL
100 A
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
VALUES
0.67
0.81
0.58
0.71
10
V
R
= Rated V
R
T
J
= 125 °C
C
T
L
S
dV/dt
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
From top of terminal hole to mounting plane
Rated V
R
90
5200
7.0
10 000
pF
nH
V/µs
mA
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
V
FM (1)
200 A
100 A
200 A
Maximum reverse leakage current per leg
See fig. 2
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
T
J
= 25 °C
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Thermal resistance, junction to case
Thermal resistance, case to heatsink
Weight
Mounting torque
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
per leg
per module
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
MIN.
- 55
-
-
-
-
35.4 (4)
30 (3.4)
30 (3.4)
-
-
TYP.
-
-
-
0.10
68
2.4
-
-
-
-
-
MAX.
175
0.38
0.19
-
-
53.1 (6)
40 (4.6)
44.2 (5)
80
35
lbf
⋅
in
lbf
⋅
in
(N
⋅
m)
g
oz.
°C/W
UNITS
°C
Revision: 09-May-17
Document Number: 94154
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-201CNQ045PbF
www.vishay.com
Vishay Semiconductors
1000
T
J
= 175 °C
1000
I
F
- Instantaneous Forward
Current (A)
I
R
- Reverse Current (mA)
100
10
1
T
J
= 75 °C
0.1
T
J
= 50 °C
0.01
T
J
= 25 °C
0.001
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
10 000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
1000
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
1
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 09-May-17
Document Number: 94154
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-201CNQ045PbF
www.vishay.com
Vishay Semiconductors
90
80
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
RMS limit
180
Allowable Case Temperature (°C)
170
160
150
140
130
120
110
100
See note (1)
90
0
20
40
60
80
100
120
140
160
Square
wave
(D = 0.50)
80
% rated
V
R
applied
DC
Average Power Loss (W)
70
60
50
40
30
20
10
0
0
DC
25
50
75
100
125
150
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
10 000
1000
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+
V
d
= 25
V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
(1)
Revision: 09-May-17
Document Number: 94154
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-201CNQ045PbF
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
1
20
2
-
-
-
-
-
-
-
-
1
3
C
4
N
5
Q
6
045 PbF
7
8
1
2
3
4
5
6
7
8
Vishay Semiconductors product
Average current rating (x 10)
Product silicon identification
C = circuit configuration
N = not isolated
Q = Schottky rectifier diode
Voltage rating (045 = 45 V)
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 09-May-17
Document Number: 94154
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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