VS-GB90DA60U
www.vishay.com
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 90 A
FEATURES
• NPT warp 2 speed IGBT technology with
positive temperature coefficient
• Square RBSOA
• HEXFRED
®
antiparallel diodes with ultrasoft
reverse recovery
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
SOT-227
• Industry standard outline
• UL approved file E78996
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
600 V
90 A at 90 °C
2.40 V
108 A at 90 °C
SOT-227
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
typical at 100 A, 25 °C
I
F
DC
Package
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Higher switching frequency up to 150 kHz
• Lower conduction losses and switching losses
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Clamped inductive load current
Diode continuous forward current
Gate-to-emitter voltage
Power dissipation, IGBT
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
V
GE
P
D
T
C
= 25 °C
T
C
= 90 °C
T
C
= 25 °C
T
C
= 90 °C
Any terminal to case, t = 1 min
T
C
= 25 °C
T
C
= 90 °C
T
C
= 25 °C
T
C
= 90 °C
TEST CONDITIONS
MAX.
600
147
90
300
A
300
180
108
± 20
625
300
W
379
182
2500
V
V
UNITS
V
Power dissipation, diode
Isolation voltage
P
D
V
ISOL
Revision: 25-Jun-13
Document Number: 94771
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB90DA60U
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown
voltage
Collector to emitter voltage
SYMBOL
V
BR(CES)
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 15 V, I
C
= 100 A
V
CE(on)
V
GE
= 15 V, I
C
= 100 A, T
J
= 125 °C
V
GE
= 15 V, I
C
= 100 A, T
J
= 150°C
Gate threshold voltage
Temperature coefficient of threshold
voltage
Collector to emitter leakage current
V
GE(th)
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= V
GE
, I
C
= 250 μA, T
J
= 125 °C
V
CE
= V
GE
, I
C
= 1 mA (25 °C to 125 °C)
V
GE
= 0 V, V
CE
= 600 V
I
CES
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
I
C
= 100 A, V
GE
= 0 V
Forward voltage drop, diode
Gate to emitter leakage current
V
FM
I
GES
I
C
= 100 A, V
GE
= 0 V, T
J
= 125 °C
I
C
= 100 A, V
GE
= 0 V, T
J
= 150 °C
V
GE
= ± 20 V
MIN.
600
-
-
-
3
-
-
-
-
-
-
-
-
-
TYP.
-
2.4
3
3.3
3.9
2.5
- 10
7
1.5
6
1.6
1.56
1.53
-
MAX.
-
2.8
3.4
-
5.0
-
-
100
6.0
10
2.1
2.0
-
± 200
nA
V
mV/°C
μA
mA
V
UNITS
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
T
J
= 150 °C, I
C
= 300 A, R
g
= 22
RBSOA
t
rr
I
rr
Q
rr
t
rr
I
rr
Q
rr
I
F
= 50 A, dI
F
/dt = 200 A/μs,
V
R
= 200 V, T
J
= 125 °C
I
F
= 50 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
V
GE
= 15 V to 0 V, V
CC
= 400 V,
V
P
= 600 V, L = 500 μH
-
-
-
-
-
-
95
10
480
144
16
1136
-
-
-
-
-
-
ns
A
nC
ns
A
nC
Fullsquare
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 125 °C
I
C
= 100 A, V
CC
= 360 V,
V
GE
= 15 V, R
g
= 5
L = 500 μH, T
J
= 25 °C
I
C
= 100 A, V
CC
= 480 V, V
GE
= 15 V
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
Energy losses
include tail and
diode
recovery.
Diode used
60APH06
-
-
-
-
-
-
-
-
-
-
TYP.
460
160
70
0.39
1.10
1.49
245
53
240
63
0.52
1.24
1.76
240
54
250
80
MAX.
690
250
130
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
ns
mJ
nC
UNITS
Revision: 25-Jun-13
Document Number: 94771
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB90DA60U
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature
IGBT
Junction to case
Diode
Case to sink thermal resistance, flat greased
surface
Mounting torque, on termianls and heatsink
Weight
Case style
R
thJC
R
thCS
T
SYMBOL
T
J
, T
Stg
MIN.
- 40
-
-
-
-
-
TYP.
-
-
-
0.1
-
30
SOT-227
MAX.
150
0.20
°C/W
0.33
-
1.3
-
Nm
g
UNITS
°C
160
160
Allowable Case Temperature (°C)
140
120
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
DC
Allowable Case Temperature (°C)
140
120
100
80
60
40
20
0
0
20
40
60
80 100 120 140 160 180 200
I
C
- Continuous Collector Current (A)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
I
F
- Continuous Forward Current (A)
Fig. 3 - Maximum Allowable Forward Current vs.
Case Temperature, Diode Leg
I
C
- Collector to Emitter Current (A)
300
250
V
GE
= 15V
200
160
I
F
- Forward Current (A)
T
J
= 125 °C
200
150
T
J
= 25 °C
100
50
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
T
J
= 150 °C
T
J
= 150 °C
120
80
T
J
= 25 °C
T
J
= 125 °C
40
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
CE
- Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Collector to Emitter Voltage (V)
V
F
- Forward Voltage Drop (V)
Fig. 4 - Typical Forward Voltage Drop Characteristics
Revision: 25-Jun-13
Document Number: 94771
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB90DA60U
www.vishay.com
Vishay Semiconductors
V
CE
- Collector-to-Emitter Voltage (V)
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0
20
40
60
80
100
120
140
160
Ic = 30 A
Ic = 50 A
Ic = 100 A
Ic = 75 A
I
C
- Collector-to-Emitter Current (A)
160
140
120
100
80
60
40
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
V
GE
-
Gate-to-Emitter
Voltage (V)
Fig. 5 - Typical IGBT Transfer Characteristics
T
J
- Junction Temperature (V)
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction
Temperature, V
GE
= 15 V
100
1.6
T
J
= 150 °C
I
CES
- Collector Current (mA)
10
1
0.1
0.01
0.001
0.0001
0
100
200
300
400
1.4
Switching
Energy (mJ)
E
off
1.2
1
0.8
0.6
0.4
0.2
E
on
T
J
= 125 °C
T
J
= 25 °C
500
600
0
10 20 30 40 50 60 70 80 90 100 110 120
V
CES
- Collector-to-Emitter Voltage (V)
I
C
- Collector Current (A)
Fig. 9 - Typical IGBT Energy Losses vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5
,
V
GE
= 15 V, Diode used: 60APH06
1
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
5
V
GETH
- Threshold Voltage (V)
4.5
Switching
Time (μs)
4
3.5
3
2.5
2
1.5
1
0.20
0.40
0.60
T
J
= 25 °C
t
d(off)
t
d(on)
0.1
t
f
T
J
=125 °C
t
r
0.01
0.80
1.00
0
20
40
60
80
100
120
I
C
(mA)
Fig. 7 - Typical IGBT Threshold Voltage
I
C
- Collector Current (A)
Fig. 10 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
R
g
= 5
,
V
GE
= 15 V, Diode used: 60APH06
Revision: 25-Jun-13
Document Number: 94771
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GB90DA60U
www.vishay.com
Vishay Semiconductors
2000
E
on
1500
E
off
V
R
= 200 V
I
F
= 50 A
4
3.5
Energy Losses (mJ)
3
Q
rr
(nC)
2.5
2
1.5
1
0.5
0
0
10
20
30
40
125 °C
1000
500
25 °C
0
50
100
1000
R
g
(Ω)
Fig. 11 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 100 A, L = 500 μH,
V
CC
= 360 V, V
GE
= 15 V, Diode used: 60APH06
di
F
/dt (A/μs)
Fig. 14 - Typical Stored Charge vs. dI
F
/dt of Diode
35
30
V
R
= 200 V
I
F
= 50 A
Switching
Time (μs)
1
t
d(on)
t
d(off)
25
20
125 °C
t
r
0.1
t
f
I
rr
(A)
15
10
5
25 °C
0.01
0
10
20
30
40
50
60
0
100
1000
R
g
(Ω)
Fig. 12 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, L = 500 μH, V
CC
= 360 V,
I
C
= 100 A, V
GE
= 15 V, Diode used: 60APH06
200
180
160
140
125 °C
V
R
= 200 V
I
F
= 50 A
di
F
/dt (A/μs)
Fig. 15 - Typical Reverse Recovery Current vs. dI
F
/dt of Diode
t
rr
(ns)
120
100
80
60
40
100
1000
25 °C
di
F
/dt (A/μs)
Fig. 13 - Typical Reverse RecoveryTime vs. dI
F
/dt, of Diode
Revision: 25-Jun-13
Document Number: 94771
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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