HD1530JL
High Voltage NPN Power Transistor
for High Definition and New Super-Slim CRT Display
PRELIMINARY DATA
Features
■
Figure 1.
Package
STATE-OF-THE-ART TECHNOLOGY:
DIFFUSED COLLECTOR “ENHANCED
GENERATION“ EHVS1
WIDER RANGE OF OPTIMUM DRIVE
CONDITIONS
LESS SENSITIVE TO OPERATING
TEMPERATURE VARIATION
■
■
Applications
■
HORIZONTAL DEFLECTION OUTPUT FOR
DIGITAL TV, HDTV, AND HIGH -END
MONITORS
Description
The device uses a Diffused Collector in Planar
technology which adopts ”Enhanced High Voltage
Structure” (EHVS1) that was developed to fit
High-Definition CRT displays.
The new HD product series features improved
silicon efficiency, bringing updated performance to
Horizontal Deflection output stages.
Figure 2.
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b
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TO-264
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2
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1
Internal Schematic Diagram
Table 1.
Order Codes
Marking
HD1530JL
Package
TO-264
Packing
TUBE
Part Number
HD1530JL
July 2005
rev.1
1/5
www.st.com
5
HD1530JL
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
STG
T
J
Absolute Maximum Rating
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitte-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
P
< 5ms)
Base Current
Base Peak Current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage Temperature
Max. Operating Junction Temperature
Value
1500
700
10
26
40
10
20
200
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
Table 3.
Symbol
R
thJC
Thermal Data
Parameter
Thermal Resistance Junction-Case____________________Max
Table 4.
Symbol
I
CES
I
EBO
Electrical Characteristics
(T
CASE
= 25°C; unless otherwise specified)
Parameter
Collector Cut-off Current
(V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= 1500V
V
CEO(
SUS
)
Collector-Emitter
Note: 1
Susting Voltage (I
B
= 0)
V
EBO
V
CE(sat)
Note: 1
V
BE(sat)
Note: 1
h
FE
Emitter-Base Voltage (I
C
= 0)
Collector-Emitter Saturation Voltage I
C
= 13A
_____
I
B
= 3.25A
Base-Emitter Saturation Voltage
I
C
= 13A
_____
I
B
= 3.25A
I
C
= 1A
_____
V
CE
= 5V
I
C
= 13A
____
V
CE
= 5V
I
C
= 12A
____ _
f
h
= 32KHz
I
B(on)
= 1.5A
___
I
B(off)
= -6.1A
I
C
= 12A
_____
f
h
= 48KHz
I
B(on)
= 2A
____
I
B(off)
= -6.7A
I
C
= 6.5A
_____
f
h
= 100KHz
I
B(on)
= 0.9A
___
I
B(off)
= -4.6A
3.3
240
2.8
200
1.5
110
5
1
28
O
bs
t
s
t
f
t
s
t
f
t
s
t
f
et
l
o
DC Current Gain
ro
P
e
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d
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t(
V
CE
= 1500V____T
C
= 125°C
V
EB
= 5V
I
C
= 10mA
I
E
= 10mA
O
-
so
b
te
le
r
P
d
o
0.625
Value
ct
u
s)
(
°C
°C
Unit
°C/W
Min.
Typ.
Max.
0.2
2
10
Unit
mA
mA
μA
V
V
700
10
2.5
1.5
V
V
8
μs
ns
μs
ns
μs
ns
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
Note: 1 Pulsed duration = 300
μ
s, duty cycle
≤
1.5%.
2/5
HD1530JL
Table 5.
TO-264 Mechanical Data
Figure 3.
TO-264 Drawing
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3/5
HD1530JL
Table 6.
Revision History
Date
05-July-2005
Revision
1
Initial release.
Changes
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4/5
HD1530JL
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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