VS-1N3208 Series
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Vishay Semiconductors
Silicon Rectifier Diodes,
(Stud Version) 15 A
FEATURES
• Low thermal impedance
• High case temperature
• Excellent reliability
• Maximum design flexibility
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-5 (DO-203AB)
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
15 A
DO-5 (DO-203AB)
Single
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
FSM
I
2
t
I
2
t
V
RRM
T
J
Note
(1)
JEDEC
®
registered values
Range
TEST CONDITIONS
VALUES
15
(1)
T
C
50 Hz
60 Hz
50 Hz
60 Hz
150
(1)
239
250
(1)
286
260
3870
50 to 600
-65 to +175
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-1N3208
VS-1N3209
VS-1N3210
VS-1N3211
VS-1N3212
VS-1N3213
VS-1N3214
V
RRM
, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V
RM
, MAXIMUM DIRECT REVERSE VOLTAGE
(T
J
= -65 °C TO 175 °C)
(T
J
= -65 °C TO 175 °C)
V
V
50
(1)
100
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
50
(1)
100
(1)
200
(1)
300
(1)
400
(1)
500
(1)
600
(1)
Notes
• Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g. 1N3208R, 1N3209R
(1)
JEDEC
®
registered values
Revision: 11-Jan-18
Document Number: 93496
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N3208 Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
SYMBOL
I
F(AV)
TEST CONDITIONS
180° sinusoidal conduction
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Maximum peak one cycle
non-repetitive surge current
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
Half cycle 50 Hz sine wave
or 6 ms rectangular pulse
Half cycle 60 Hz sine wave
or 5 ms rectangular pulse
t = 10 ms
Maximum I
2
t for fusing
I
2
t
Maximum I
2
t for individual
device fusing
Maximum
for individual
device fusing
Maximum forward voltage drop
Maximum average reverse current
Notes
(1)
JEDEC
®
registered values
(2)
I
2
t for time t = I
2
t
x
t
x
x
I
2
t
I
2
t
(2)
V
FM
I
R(AV)
t = 8.3 ms
t = 10 ms
t = 8.3 ms
VALUES
15
(1)
150
Following any rated load
condition and with rated
V
RRM
applied
(1)
UNITS
A
°C
239
250
(1)
A
284
297
286
260
403
368
3870
1.5
(1)
10
(1)
A
2
s
V
mA
A
2
s
I
FSM
Following any rated load
condition and with V
RRM
applied following surge = 0
With rated V
RRM
applied
following surge,
initial T
J
= 150 °C
With V
RRM
= 0 following
surge, initial T
J
= 150 °C
t = 0.1 ms to 10 ms, V
RRM
= 0 following surge
I
F(AV)
= 15 A (47.1 A peak), T
C
= 150 °C
Maximum rated I
F(AV)
and T
C
= 150 °C
THERMAL AND MECHANICAL
SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum internal thermal
resistance, junction to case
Thermal resistance,
case to sink
Maximum allowable mounting
torque (+0 %, -10 %)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut
(2)
Lubricated thread, tighting on nut
(2)
(3)
TEST CONDITIONS
VALUES
-65 to 175
(1)
0.65
UNITS
°C
°C/W
0.25
3.4 (30)
2.3 (20)
4.2 (37)
3.2 (28)
28.5
1
JEDEC
®
g
oz.
Not lubricated thread, tighting on hexagon
Lubricated thread, tighting on hexagon
(3)
Weight
Case style
Notes
(1)
JEDEC
®
registered values
(2)
Recommended for pass-through holes
(3)
Recommended for holed threaded heatsinks
DO-5 (DO-203AB)
Revision: 11-Jan-18
Document Number: 93496
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-1N3208 Series
www.vishay.com
35
120
Vishay Semiconductors
Average Forward Power Loss
Over Full Cycle (W)
100
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
90
Ø
60°
180°
120°
DC
Average Forward Current
Over Full Cycle (A)
30
Ø
25
20
180°
15
120°
10
5
0
110
60°
DC
Conduction period
T
J
= 140 °C
Conduction period
120
130
140
150
160
170
180
Maximum Allowable Case Temperature (°C)
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature
250
Average Forward Current Over Full Cycle (A)
Fig. 3 - Maximum Low Level Forward Power Loss vs.
Average Forward Current
10
5
Average Forward Power Loss
Over Full Cycle (W)
At any rated load condition and
with
rated
V
RRM
following surge
Peak Half Sine Wave
Forward Current (A)
200
10
4
120°
180°
150
50 Hz
60 Hz
10
3
60°
T
J
= 140 °C
DC
10
2
Ø
100
Conduction period
10
10
10
2
10
3
10
4
1
2
4
6
8
10
20
40 60
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Number of Current Pulses
Average Forward Current Over Full Cycle (A)
Fig. 4 - Maximum High Level Forward Power Loss vs.
Average Forward Current
Instantaneous Forward Current (A)
10
3
10
2
T
J
= 140 °C
10
T
J
= 25 °C
1
0
1
2
3
4
5
6
7
Instantaneous Forward Voltage (V)
Fig. 5 - Maximum Forward Voltage vs. Forward Current
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95360
Revision: 11-Jan-18
Document Number: 93496
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DO-203AB (DO-5) for
1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series
DIMENSIONS
in millimeters (inches)
Ø 14.6 (0.57)
6.1 (0.24)
7.0 (0.28)
1.03 (0.04)
MAX.
Ø 4.10 (0.16)
Ø 3.80 (0.15)
4 (0.16) MIN.
25.4 (1.0) MAX.
10.8 (0.43)
11.4 (0.45)
10.7 (0.42)
11.5 (0.45)
1/4" 28UNF-2A
for metric devices: M6 x 1
1.0 (0.04)
MAX.
17.40 (0.68) MIN.
Across flats
Document Number: 95360
Revision: 29-Sep-08
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000