BFP540ESD
Low Noise Silicon Bipolar RF Transistor
•
For ESD protected high gain low noise amplifier
•
High ESD robustness
typical value 1000 V (HBM)
•
Outstanding
G
ms
= 21.5 dB @ 1.8 GHz
Minimum noise figure
NF
min
= 0.9 dB @ 1.8 GHz
•
Pb-free (RoHS compliant) and halogen-free package
with visible leads
•
Qualification report according to AEC-Q101 available
3
4
1
2
ESD
(
E
lectro
s
tatic
d
ischarge) sensitive device, observe handling precaution!
Type
BFP540ESD
Marking
AUs
1=B
Pin Configuration
2=E
3=C
4=E
-
-
Package
SOT343
Maximum Ratings
at
T
A
= 25 °C, unless otherwise specified
Parameter
Symbol
V
CEO
Value
Unit
Collector-emitter voltage
T
A
= 25 °C
T
A
= -55 °C
V
4.5
4
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
≤
77°C
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
J
T
A
T
Stg
10
10
1
80
8
250
150
-65 ... 150
-65 ... 150
mW
°C
mA
Junction temperature
Ambient temperature
Storage temperature
1
T
S
is measured on the emitter lead at the soldering point to the pcb
1
2013-09-13
BFP540ESD
Thermal Resistance
Parameter
Symbol
R
thJS
Value
Unit
Junction - soldering point
1)
290
K/W
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-emitter cutoff current
V
CE
= 10 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 0.5 V,
I
C
= 0
DC current gain
I
C
= 20 mA,
V
CE
= 3.5 V, pulse measured
1
For
Unit
max.
-
10
100
10
170
V
µA
nA
µA
-
typ.
5
-
-
-
110
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
4.5
-
-
-
50
the definition of
R
thJS please refer to Application Note AN077 (Thermal Resistance Calculation)
2
2013-09-13
BFP540ESD
Electrical Characteristics
at
T
A
= 25 °C, unless otherwise specified
Symbol
Values
Parameter
min.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 50 mA,
V
CE
= 4 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
emitter grounded
Collector emitter capacitance
V
CE
= 2 V,
f
= 1 MHz,
V
BE
= 0 ,
base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz,
V
CB
= 0 ,
collector grounded
Minimum noise figure
I
C
= 5 mA,
V
CE
= 2 V,
f
= 1.8 GHz,
Z
S
=
Z
Sopt
I
C
= 5 mA,
V
CE
= 2 V,
f
= 3 GHz,
Z
S
=
Z
Sopt
Power gain, maximum stable
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Power gain, maximum available
1)
I
C
= 20 mA,
V
CE
= 2 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
Transducer gain
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
3GHz
Third order intercept point at output
2)
V
CE
= 2 V,
I
C
= 20 mA,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
1dB compression point at output
I
C
= 20 mA,
V
CE
= 2 V,
Z
S =
Z
L =
50
Ω
,
f
=
1
.
8GHz
1/2
ma = |S21e /
S
12e | (k-(k²-1) ),
G
ms = |S21e /
S
12e|
2
IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
1
G
Unit
max.
-
0.24
GHz
pF
typ.
30
0.14
f
T
C
cb
21
-
C
ce
-
0.41
-
C
eb
-
0.59
-
NF
min
-
-
G
ms
-
0.9
1.3
21.5
1.4
-
-
dB
dB
G
ma
-
16
-
dB
|S
21e
|
2
16
-
IP3
P
-1dB
-
-
18.5
14
24.5
11
-
-
-
-
dB
dBm
3
2013-09-13
BFP540ESD
Total power dissipation
P
tot
=
ƒ
(T
S
)
Permissible Pulse Load
R
thJS
=
ƒ
(t
p
)
10
3
300
250
K/W
200
R
thJS
10
2
Ptot [mW]
150
100
50
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
1 -7
10
0
25
50
75
100
125
150
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
T
S
[°C]
t
p
Permissible Pulse Load
P
totmax
/P
totDC
=
ƒ
(t
p
)
10
1
Collector-base capacitance
C
cb
=
ƒ
(V
CB
)
f
= 1 MHz
0.3
P
totmax
/
P
totDC
0.25
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
0.2
C [pF]
-2
cb
0.15
0.1
0.05
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
s
10
0
0
0
2
4
6
8
10
12
14
t
p
V
CB
[V]
4
2013-09-13
BFP540ESD
Third order Intercept Point
IP
3
=
ƒ
(I
C
)
(Output,
Z
S
=
Z
L
= 50
Ω
)
V
CE
= parameter,
f
= 900 MHz
30
30
Transition frequency
f
T
=
ƒ
(I
C
)
V
CE
= parameter in V,
f
= 2 GHz
25
4.00V
2.00V
25
3.00V
1.50V
20
20
3 − 4.5V
IP
3
[dBm]
15
f [GHz]
1.00V
15
T
2.00V
10
10
1.00V
0.75V
5
5
0.50V
0
0
10
20
30
40
50
60
70
80
0
0
10
20
30
40
50
60
70
80
90
100
I
C
[mA]
I
C
[mA]
Power gain
G
ma
,
G
ms
=
ƒ
(f)
V
CE
= 3 V,
I
C
= 25 mA
Power gain
G
ma
,
G
ms
=
ƒ
(I
C
)
V
CE
= 3 V
f
= parameter in GHz
45
28
26
40
24
35
22
0.90GHz
30
20
G
ms
G [dB]
25
G [dB]
18
1.80GHz
16
20
14
2.40GHz
3.00GHz
G
15
ma
12
|S |
2
21
10
4.00GHz
5.00GHz
6.00GHz
10
8
5
0
1
2
3
4
5
6
6
0
10
20
30
40
50
60
70
80
90
100
f [GHz]
I
C
[mA]
5
2013-09-13
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