Si4933DY
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
- 12
R
DS(on)
(Ω)
0.014 at V
GS
= - 4.5 V
0.017 at V
GS
= - 2.5 V
0.022 at V
GS
= - 1.8 V
I
D
(A)
- 9.8
- 8.9
- 7.8
FEATURES
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switching
S
1
S
2
SO-8
S
1
G
1
S
2
G
2
1
2
3
4
Top View
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
8
7
6
5
D
1
D
1
D
2
D
2
G
1
G
2
Ordering Information:
Si4933DY-T1-E3
(Lead (Pb)-free)
Si4933DY-T1-GE3
(Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
- 1.7
2.0
1.3
- 55 to 150
- 9.8
- 7.8
- 30
- 0.9
1.1
0.7
W
°C
10 s
±8
- 7.4
- 5.9
A
Steady State
- 12
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
≤
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
45
85
26
Maximum
62.5
110
35
°C/W
Unit
Document Number: 71980
S09-0867-Rev. D, 18-May-09
www.vishay.com
1
Si4933DY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Test Conditions
V
DS
= V
GS
, I
D
= - 500 µA
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= - 12 V, V
GS
= 0 V
V
DS
= - 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= - 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 9.8 A
V
GS
= - 2.5 V, I
D
= - 8.9 A
V
GS
= - 1.8 V, I
D
= - 5.0 A
V
DS
= - 10 V, I
D
= - 9.8 A
I
S
= - 1.7 A, V
GS
= 0 V
Min.
- 0.40
Typ.
Max.
- 1.0
± 100
-1
-5
Unit
V
nA
µA
A
- 30
0.0115
0.014
0.018
40
- 0.7
46
- 1.2
70
0.014
0.017
0.022
Ω
S
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
V
DS
= 6 V, V
GS
= - 4.5 V, I
D
= - 9.8 A
6.0
13
35
55
70
480
390
315
nC
V
DD
= 6 V, R
L
= 6
Ω
I
D
≅
- 1 A, V
GEN
= - 4.5 V, R
g
= 6
Ω
I
F
= - 1.7 A, dI/dt = 100 A/µs
47
320
260
210
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
30
V
GS
= 5 V thru 2 V
24
I
D
- Drain Current (A)
I
D
- Drain Current (A)
24
1.5 V
30
18
18
12
12
T
C
= 125
°C
6
25
°C
6
1V
0
0
1
2
3
4
5
- 55
°C
0
0.0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
www.vishay.com
2
Document Number: 71980
S09-0867-Rev. D, 18-May-09
Si4933DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.030
6000
0.025
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
5000
C
iss
0.020
V
GS
= 1.8 V
0.015
V
GS
= 2.5 V
4000
3000
0.010
V
GS
= 4.5 V
0.005
2000
C
oss
1000
C
rss
0.000
0
6
12
18
24
30
0
0
2
4
6
8
10
12
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
5
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 6 V
I
D
= 9.8 A
4
R
DS(on)
- On-Resistance
(Normalized)
1.6
V
GS
= 4.5 V
I
D
= 9.8 A
1.4
Capacitance
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
30
0.030
On-Resistance vs. Junction Temperature
0.025
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
I
S
- Source Current (A)
10
I
D
= 3 A
0.020
I
D
= 9.8 A
0.015
T
J
= 25
°C
0.010
0.005
1
0.0
0.000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71980
S09-0867-Rev. D, 18-May-09
www.vishay.com
3
Si4933DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
0.4
50
0.3
V
GS(th)
Variance (V)
I
D
= 500
µA
0.2
Power (W)
40
30
0.1
20
0.0
10
- 0.1
- 0.2
- 50
- 25
0
25
50
75
100
125
150
0
10
-2
10
-1
1
Time (s)
10
100
600
T
J
- Temperature (°C)
Threshold Voltage
100
Limited by R
DS(on)
*
Single Pulse Power
I
DM
Limited
P(t) = 0.0001
10
I
D
- Drain Current (A)
P(t) = 0.001
P(t) = 0.01
1
I
D(on)
Limited
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
DS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85
°C/W
t
1
t
2
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
1
Square Wave Pulse Duration (s)
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 71980
S09-0867-Rev. D, 18-May-09
Si4933DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71980.
Document Number: 71980
S09-0867-Rev. D, 18-May-09
www.vishay.com
5
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
