STGW39NC60VD
N-channel 40A - 600V - TO-247
Very fast switching PowerMESH™ IGBT
PRELIMINARY DATA
General features
Type
V
CES
V
CE(sat)
(Max)@ 25°C
<2.5V
I
C
@100°C
40A
STGW39NC60VD 600V
■
■
■
Low C
RES
/ C
IES
ratio (no cross conduction
susceptibility)
High frequency operation
Very soft ultra fast recovery anti parallel diode
TO-247
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “V” identifies a
familyoptimized for high frequency application.
Internal schematic diagram
Applications
■
■
■
High frequency inverters, ups
Motor drivers
Induction heating
Order codes
Part number
STGW39NC60VD
Marking
GW39NC60VD
Package
TO-247
Packaging
Tube
July 2006
Rev 4
1/13
www.st.com
13
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Contents
STGW39NC60VD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
4
5
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STGW39NC60VD
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CES
I
C(1)
I
C (1)
I
CL (2)
V
GE
I
F
P
TOT
T
j
T
stg
T
L
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GS
= 0)
Collector current (continuous) at 25°C
Collector current (continuous) at 100°C
Collector current (pulsed)
Gate-emitter voltage
Diode RMS forward current at Tc=25°C
Total dissipation at T
C
= 25°C
Operating junction temperature
– 55 to 150
Storage temperature
Maximum lead temperature for soldering
purpose (1.6 mm from case, for 10 sec.)
300
°C
°C
Value
600
70
40
220
± 20
15
250
Unit
V
A
A
A
V
A
W
1. Calculated according to the iterative formula:
T
–
T
JMAX
C
I
(
T
)
= -----------------------------------------------------------------------------------------------------
-
C C
R
×
V
(
T
,
I
)
THJ
–
C
CESAT
(
MAX
)
C C
2. Vclamp = 480V , Tj = 150°C, R
G
= 10Ω, V
GE
= 15V
Table 2.
Symbol
R
thj-case
R
thj-amb
Thermal resistance
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Value
0.5
50
Unit
°C/W
°C/W
3/13
Electrical characteristics
STGW39NC60VD
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
BR(CES)
V
CE(SAT)
V
GE(th)
I
CES
I
GES
g
fs
Static
Parameter
Test condictions
Min.
600
1.8
1.6
3.75
2.5
Typ.
Max. Unit
V
V
V
V
µA
mA
nA
S
Collector-emitter breakdown
I
C
= 1mA, V
GE
= 0
voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-emitter leakage
current (V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Forward transconductance
V
GE
=15V, I
C
=30A,Tj=25°C
V
GE
=15V, I
C
=30A,Tj=125°C
V
CE
= V
GE
, I
C
= 250µA
V
CE
= Max rating,Tc=25°C
V
CE
= Max rating, Tc=125°C
V
GE
= ± 20V , V
CE
= 0
V
CE
= 15V
,
I
C
= 30A
5.75
500
10
± 100
20
Table 4.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test condictions
Min.
Typ.
2900
298
59
126
16
46
Max.
Unit
pF
pF
pF
V
CE
= 25V, f = 1 MHz, V
GE
= 0
V
CE
= 390V, I
C
= 30A,
V
GE
= 15V,
(see Figure 16)
nC
nC
nC
4/13
STGW39NC60VD
Electrical characteristics
Table 5.
Symbol
t
d(on)
t
r
(di/dt)
onf
t
d(on)
t
r
(di/dt)
on
t
r(Voff)
t
d(off)
t
f
t
r(Voff)
t
d(off)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test condictions
V
CC
=390 V, I
C
= 30A,
R
G
=10Ω, V
GE
=15V
Tj=25°C
(see Figure 15)
V
CC
=390 V, I
C
= 30A,
R
G
=10Ω, V
GE
=15V
Tj=125°C
(see Figure 15)
V
CC
=390 V, I
C
= 30A,
R
G
=10Ω, V
GE
=15V
Tj=25°C
(see Figure 15)
V
CC
=390 V, I
C
= 30A,
R
G
=10Ω, V
GE
=15V
Tj=125°C
(see Figure 15)
Min.
Typ.
33
13
2500
32
14
2280
33
178
65
68
238
128
Max.
Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
Table 6.
Symbol
E
on (1)
E
off(2)
E
ts
E
on (1)
E
off (2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test condictions
V
CC
= 390V, I
C
= 30A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 25°C
(see Figure 17)
V
CC
= 390V, I
C
= 30A
R
G
= 10Ω V
GE
= 15V,
,
Tj= 125°C
(see Figure 17)
Min
Typ.
333
537
870
618
1125
1743
Max
Unit
µJ
µJ
µJ
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
Table 7.
Symbol
V
f
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Collector-emitter diode
Parameter
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test condictions
If = 15A
If = 15A, Tj = 125°C
If = 15A, V
R
= 40 V,
T
j
= 25°C, di/dt =100A/µs
(see Figure 18)
If = 15A, V
R
= 40V,
T
j
= 125°C,di/dt =100A/µs
(see Figure 18)
Min
Typ.
1.6
1.4
45
56
2.55
100
290
5.8
Max
2.8
Unit
V
V
ns
nC
A
ns
nC
A
5/13
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