utilizing Maxim’s proprietary process technology. For
applications requiring 2.75kV
RMS
of isolation, see the
MAX14933 data sheet. The device transfers digital
signals between circuits with different power domains at
ambient temperatures up to +125°C.
The device offers two bidirectional, open-drain
channels for applications, such as I
2
C, that require data to
be transmitted in both directions on the same line.
The device features independent 2.25V to 5.5V
supplies on each side of the isolator. The MAX14937
operates from DC to 1.7MHz and can be used in isolated
I
2
C busses with clock stretching.
The MAX14937 is available in a 16-pin, wide-body
(10.3mm x 7.5mm) SOIC package, and is rated for
operation at ambient temperatures of -40°C to +125°C.
●
●
●
●
General Description
Safety Regulatory Approvals
(See
Safety Regulatory Approvals)
• UL According to UL1577
• cUL According to CSA Bulletin 5A
• VDE 0884-10
Ordering Information
appears at end of data sheet.
Applications
I
2
C, SMBus, PMBus™ Interfaces
Power Supplies
Battery Management
Instrumentation
Functional Diagram
V
DDA
V
DDB
MAX14937
I/OA1
I/OB1
5kV
RMS
DIGITAL
ISOLATOR
I/OA2
I/OB2
GNDA
GNDB
PMBus is a trademark of SMIF, Inc.
19-7535; Rev 2; 1/17
MAX14937
Two Channel, 5kV
RMS
I
2
C Isolator
Absolute Maximum Ratings
V
DDA
to GNDA ........................................................-0.3V to +6V
V
DDB
to GNDB ........................................................-0.3V to +6V
I/OA_ to GNDA ........................................................-0.3V to +6V
I/OB_ to GNDB ........................................................-0.3V to +6V
Short-Circuit Duration
(I/OA_ to GNDA, I/OB_ to GNDB) ........................Continuous
Continuous Power Dissipation (T
A
= +70°C)
Wide SO (derate 14.1mW/ºC above +70°C) .......... 1126.8mW
Operating Temperature Range ......................... -40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) ......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
Wide SOIC
Junction-to-Ambient Thermal Resistance (θ
JA
)...........71°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............23°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
DC Electrical Characteristics
V
DDA
- V
GNDA
= +2.25V to +5.5V, V
DDB
- V
GNDB
= +2.25V to +5.5V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values
are at V
DDA
- V
GNDA
= +3.3V, V
DDB
- V
GNDB
= +3.3V, V
GNDA
= V
GNDB
, T
A
= +25°C, unless otherwise noted. (Note 2 and Note 3)
PARAMETER
SYMBOL
VDDA
VDDB
VUVLO_
VUVLO_
HYST
IDDA
Supply Current
IDDB
II/OA_
II/OB_
Side B, all channels DC or
1.7MHz
Side A
Side B
Side A, all channels DC or
1.7MHz
VDDA = 5V
VDDA = 3.3V
VDDA = 2.5V
VDDB = 5V
VDDB = 3.3V
VDDB = 2.5V
0.5
0.5
CONDITIONS
Relative to GNDA
Relative to GNDB
VDD rising
MIN
2.25
2.25
1.7
2.0
85
6
6
5.9
4.8
4.8
4.7
9
9
9
8
8
8
3
30
mA
mA
TYP
MAX
5.5
5.5
2.2
UNITS
V
V
V
mV
POWER SUPPLY
Operating Supply Voltage
Undervoltage-Lockout Threshold
Undervoltage-Lockout Threshold
Hysteresis
Static Output Loading
www.maximintegrated.com
Maxim Integrated
│
2
MAX14937
Two Channel, 5kV
RMS
I
2
C Isolator
DC Electrical Characteristics (continued)
V
DDA
- V
GNDA
= +2.25V to +5.5V, V
DDB
- V
GNDB
= +2.25V to +5.5V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values
are at V
DDA
- V
GNDA
= +3.3V, V
DDB
- V
GNDB
= +3.3V, V
GNDA
= V
GNDB
, T
A
= +25°C, unless otherwise noted. (Note 2 and Note 3)
PARAMETER
SYMBOL
CONDITIONS
VI/OA
_
relative to GNDA
Input High Voltage
VIH
VI/OB_ relative to GNDB
VI/OA_ relative to GNDA
Input Low Voltage
Input/Output Logic-Low Level
Difference
Output Voltage Low
Leakage Current
Input Capacitance
VIL
VI/OB_ relative to GNDB
I/OA_ (Note 4), VOL - VIL
VI/OA_ relative to GNDA, II/OA_ = 3mA sink
VOL
IL
CIN
VI/OA_ relative to GNDA, II/OA_ = 0.5mA sink
VI/OB_ relative to GNDB, II/OB_ = 30mA sink
I/OA_ = VDDA, I/OB_ = VDDB
I/OA_, I/OB_, f = 1MHz
-1
5
50
600
600
900
850
400
+1
µA
pF
mV
MIN
0.7
0.7 x
VDDB
0.5
0.3 x
VDDB
V
V
TYP
MAX
UNITS
LOGIC INPUTS AND OUTPUTS
DVI/OL
mV
www.maximintegrated.com
Maxim Integrated
│
3
MAX14937
Two Channel, 5kV
RMS
I
2
C Isolator
Dynamic Characteristics
V
DDA
- V
GNDA
= +2.25V to +5.5V, V
DDB
- V
GNDB
= +2.25V to +5.5V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values
are at V
DDA
- V
GNDA
= +3.3V, V
DDB
- V
GNDB
= +3.3V, V
GNDA
= V
GNDB
, T
A
= +25°C, unless otherwise noted. (Note 5)
PARAMETER
Common-Mode Transient Immunity
Maximum Frequency
SYMBOL
CMTI
f
MAX
CONDITIONS
IN_ = GND_ or V
DD_
(Note 6)
4.5V ≤ V
DDA
,V
DDB
≤ 5.5V,
C
LA
= 40pF, R
A
= 1.6kΩ,
C
LB
= 400pF, R
B
= 180Ω
MIN
TYP
25
MAX
1.7
80
UNITS
kV/µs
MHz
t
FA
I/OA_ = 0.9V
DDA
to 0.9V
3.0V ≤ V
DDA
,V
DDB
≤ 3.6V,
C
LA
= 40pF, R
A
= 1kΩ,
C
LB
= 400pF, R
B
= 120Ω
2.25V ≤ V
DDA
,V
DDB
≤ 2.75V,
C
LA
= 40pF, R
A
= 810Ω,
C
LB
= 400pF, R
B
= 91Ω
4.5V ≤ V
DDA
,V
DDB
≤ 5.5V,
C
LA
= 40pF, R
A
= 1.6kΩ,
C
LB
= 400pF, R
B
= 180Ω
65
55
ns
35
Fall Time (Figure 1)
t
FB
I/OB_ = 0.9V
DDB
to 0.1V
DDB
3.0V ≤ V
DDA
,V
DDB
≤ 3.6V,
C
LA
= 40pF, R
A
= 1kΩ,
C
LB
= 400pF, R
B
= 120Ω
2.25V ≤ V
DDA
,V
DDB
≤ 2.75V,
C
LA
= 40pF, R
A
= 810kΩ,
C
LB
= 400pF, R
B
= 91Ω
4.5V ≤ V
DDA
,V
DDB
≤ 5.5V,
C
LA
= 0pF, R
A
= 1.6kΩ,
C
LB
= 0pF, R
B
= 180Ω
45
75
20
t
PLHAB
I/OA_ = 0.5V
DDA
to
I/OB_
=
0.7V
DDB
3.0V ≤ V
DDA
,V
DDB
≤ 3.6V,
C
LA
= 0pF, R
A
= 1kΩ,
C
LB
= 0pF, R
B
= 120Ω
2.25V ≤ V
DDA
,V
DDB
≤ 2.75V,
C
LA
= 0pF, R
A
= 810Ω,
C
LB
= 0pF, R
B
= 91Ω
4.5V ≤ V
DDA
,V
DDB
≤ 5.5V,
C
LA
= 0pF, R
A
= 1.6kΩ,
C
LB
= 0pF, R
B
= 180Ω
25
35
ns
80
Propagation Delay (Figure 1)
t
PHLAB
I/OA_ = 0.5V
DDA
to I/OB_ = 0.4V
3.0V ≤ V
DDA
,V
DDB
≤ 3.6V,
C
LA
= 0pF, R
A
= 1kΩ,
C
LB
= 0pF, R
B
= 120Ω
2.25V ≤ V
DDA
,V
DDB
≤ 2.75V,
C
LA
= 0pF, R
A
= 810Ω,
C
LB
= 0pF, R
B
= 91Ω
95
110
www.maximintegrated.com
Maxim Integrated
│
4
MAX14937
Two Channel, 5kV
RMS
I
2
C Isolator
Dynamic Characteristics (continued)
V
DDA
- V
GNDA
= +2.25V to +5.5V, V
DDB
- V
GNDB
= +2.25V to +5.5V, T
A
= -40°C to +125°C, unless otherwise noted. Typical values
are at V
DDA
- V
GNDA
= +3.3V, V
DDB
- V
GNDB
= +3.3V, V
GNDA
= V
GNDB
, T
A
= +25°C, unless otherwise noted. (Note 5)
PARAMETER
SYMBOL
CONDITIONS
4.5V ≤ V
DDA
, V
DDB
≤ 5.5V,
C
LA
= 0pF, R
A
= 1.6kΩ,
C
LB
= 0pF, R
B
= 180Ω
t
PLHBA
I/OB_ = 0.5V
DDB
to I/OA_ =
0.7V
DDA
3.0V ≤ V
DDA
, V
DDB
≤ 3.6V,
C
LA
= 0pF, R
A
= 1kΩ,
C
LB
= 0pF, R
B
= 120Ω
2.25V ≤ V
DDA
, V
DDB
≤ 2.75V,
C
LA
= 0pF, R
A
= 810Ω,
C
LB
= 0pF, R
B
= 91Ω
4.5V ≤ V
DDA
, V
DDB
≤ 5.5V,
C
LA
= 0pF, R
A
= 1.6kΩ,
C
LB
= 0pF, R
B
= 180Ω
t
PHLBA
I/OB_ = 0.5V
DDB
to I/OA_ = 0.9V
3.0V ≤ V
DDA
, V
DDB
≤ 3.6V,
C
LA
= 0pF, R
A
= 1kΩ,
C
LB
= 0pF, R
B
= 120Ω
2.25V ≤ V
DDA
, V
DDB
≤ 2.75V,
C
LA
= 0pF, R
A
= 810Ω,
C
LB
= 0pF, R
B
= 91Ω
4.5V ≤ V
DDA
, V
DDB
≤ 5.5V
PWD
AB
Pulse-Width Distortion
PWD
BA
|t
PLHBA
- t
PHLBA
|
|t
PLHAB
- t
PHLAB
|
3.0V ≤ V
DDA
, V
DDB
≤ 3.6V
2.25V ≤ V
DDA
, V
DDB
≤ 2.75V
4.5V ≤ V
DDA
, V
DDB
≤ 5.5V
3.0V ≤ V
DDA
, V
DDB
≤ 3.6V
2.25V ≤ V
DDA
, V
DDB
≤ 2.75V
MIN
TYP
MAX
25
UNITS
25
35
ns
115
Propagation Delay (Figure 1)
115
125
65
65
80
95
95
100
ns
ESD Protection
PARAMETER
ESD
SYMBOL
CONDITIONS
Human body model, all pins
MIN
TYP
±4
MAX
UNITS
kV
Note 2:
All devices are 100% production tested at T
A
= +125°C. Specifications over temperature are guaranteed by design.
Note 3:
All currents into the device are positive; all currents out of the device are negative. All voltages are referenced to ground on
the corresponding side of the device, unless otherwise noted.
Note 4:
This is the minimum difference between the output logic-low level and the input logic threshold. This ensures that there is no
possibility of the part latching up the bus to which it is connected.
Note 5:
Not production tested. Guaranteed by design.
Note 6:
CMTI is the maximum sustainable common-mode voltage slew rate while maintaining operation. CMTI applies to both rising
and falling common-mode voltage edges. Tested with the transient generator connected between GNDA and GNDB
///////////////24MHZ时钟设置//////////////////////////////////////////////////////////////
UCSCTL3 |=SELREF__REFOCLK;
__bis_SR_register(SCG0); //disable the FLL control ......
EtherCAT（Ethernet for Control Automation Technology）是一种基于以太网的开发构架的实时工业现场总线通讯协议，EtherCAT是最快的工业以太网技术之一，同时它提供纳秒级精确同步。相对于设置了相同循环时间的其他总线系统，EtherCAT系统结构通常能减少25%-30%的CPU负载，EtherCAT的出现为系统的实时性能和拓扑的灵活性树立了新的标准。...[详细]
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