PD - 96908E
IRF6644
DirectFET Power MOSFET
l
l
l
l
l
l
l
l
l
RoHs Compliant Containing No Lead and Bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
V
DSS
Q
g
tot
V
GS
Q
gd
11.5nC
R
DS(on)
V
gs(th)
3.7V
100V max ±20V max 10.3mΩ@ 10V
35nC
MN
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SH
SJ
SP
MZ
MN
DirectFET ISOMETRIC
Description
The IRF6644 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6644 is optimized for primary side bridge topologies in isolated DC-DC applications, for wide range universal input Telecom applications
(36V - 75V), and for secondary side synchronous rectification in regulated DC-DC topologies. The reduced total losses in the device coupled
with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements,
and makes this device ideal for high performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
0.08
Typical R DS (on), (Ω)
(mΩ)
Max.
100
±20
10.3
8.3
60
82
220
6.2
13
TA= 25°C
12
VGS = 7.0V
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Continuous Drain Current, V
GS
@ 10V
g
e
@ 10V
e
@ 10V
f
h
A
Single Pulse Avalanche Energy
Ãg
mJ
A
ID = 6.2A
0.06
0.04
0.02
0.00
4
TJ = 125°C
TJ = 25°C
6
8
10
12
14
VGS, Gate-to-Source Voltage (V)
16
DS(on)
11
VGS = 8.0V
VGS = 10V
Typical R
10
VGS = 15V
0
4
8
12
16
20
9
ID, Drain Current (A)
Fig 2.
Typical On-Resistance Vs. Drain Current
Fig 1.
Typical On-Resistance Vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 12mH, R
G
= 25Ω, I
AS
= 6.2A.
www.irf.com
1
6/30/05
IRF6644
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Min.
100
–––
–––
2.8
–––
–––
–––
–––
–––
15
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
0.11
10.3
–––
-10
–––
–––
–––
–––
–––
35
8.0
1.6
11.5
13
13.1
17
1.0
17
26
34
16
2210
420
100
2120
240
–––
–––
13
4.8
–––
20
250
100
-100
–––
47
–––
–––
17.3
–––
–––
–––
2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 10.3A
c
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 6.2A
V
DS
= 50V
V
mΩ
V
mV/°C
µA
nA
S
V/°C Reference to 25°C, I
D
= 1mA
nC
V
GS
= 10V
I
D
= 6.2A
See Fig. 17
V
DS
= 16V, V
GS
= 0V
V
DD
= 50V, V
GS
= 10V
I
D
= 6.2A
R
G
=6.2Ω
c
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
GS
= 0V, V
DS
= 1.0V, f=1.0MHz
V
GS
= 0V, V
DS
= 80V, f=1.0MHz
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
d
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
42
69
1.3
63
100
V
ns
nC
–––
–––
82
Min.
–––
Typ. Max. Units
–––
10
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 6.2A, V
GS
= 0V
c
T
J
= 25°C, I
F
= 6.2A, V
DD
= 50V
di/dt = 100A/µs
c
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6644
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
c
Power Dissipation
c
Power Dissipation
f
Power Dissipation
Operating Junction and
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
Peak Soldering Temperature
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
100
cg
Junction-to-Ambient
dg
Junction-to-Ambient
eg
Junction-to-Case
fg
Junction-to-Ambient
Parameter
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
–––
Units
°C/W
Junction-to-PCB Mounted
10
Thermal Response ( Z thJA )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
C
τ
τ
2
τ
3
τ
4
τ
4
0.1
Ri (°C/W)
0.6784
17.299
17.566
9.4701
τi
(sec)
0.00086
0.57756
8.94
106
0.01
τ
1
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.0001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Notes:
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
T
C
measured with thermocouple incontact with top (Drain) of part.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
www.irf.com
3
IRF6644
100
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
6.0V
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
6.0V
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
10
BOTTOM
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
≤
60µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
100.00
Fig 5.
Typical Output Characteristics
2.0
ID, Drain-to-Source Current
(Α)
10.00
TJ = -40°C
Typical R DS(on), (Normalized)
TJ = 150°C
TJ = 25°C
ID = 10.3A
VGS = 10V
1.5
1.00
0.10
1.0
VDS = 10V
0.01
3.0
4.0
5.0
≤
60µs PULSE WIDTH
6.0
7.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
Fig 6.
Typical Transfer Characteristics
100000
TJ , Junction Temperature (°C)
Fig 7.
Normalized On-Resistance vs. Temperature
20
ID= 6.2A
VGS, Gate-to-Source Voltage (V)
16
VDS = 50V
VDS= 20V
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
C, Capacitance (pF)
Ciss
1000
12
Coss
8
100
Crss
4
10
1
10
100
0
0
20
40
60
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 9.
Typical Total Gate Charge vs
Gate-to-Source Voltage
www.irf.com
IRF6644
1000.0
1000
ID, Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ISD , Reverse Drain Current (A)
100.0
100
100µsec
10
1msec
100msec
1
TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.10
1.00
10msec
10.0
TJ = 150°C
TJ = 25°C
TJ = -40°C
1.0
VGS = 0V
0.1
0.0
1.0
2.0
3.0
4.0
5.0
0.1
10.00
100.00 1000.00
VSD , Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
12
5.0
Fig11.
Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
ID = 1.0A
10
4.5
ID = 1.0mA
ID = 250µA
ID = 150µA
ID , Drain Current (A)
8
4.0
6
3.5
4
3.0
2
2.5
0
25
50
75
100
125
150
2.0
-50
-25
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
TJ , Junction Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Ambient Temperature
1000
Fig 13.
Typical Threshold Voltage vs.
Junction Temperature
ID
TOP
2.8A
3.3A
BOTTOM
6.2A
EAS, Single Pulse Avalanche Energy (mJ)
800
600
400
200
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
www.irf.com
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
