HEXFET
®
Power MOSFET plus Schottky Diode
RoHs Compliant Containing No Lead and Bromide
V
DSS
V
GS
R
DS(on)
R
DS(on)
l
Integrated Monolithic Schottky Diode
25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
Ultra Low Package Inductance
45nC
13nC
6.2nC
38nC
38nC
1.8V
l
Optimized for High Frequency Switching
l
Ideal for CPU Core DC-DC Converters
l
Optimized for Sync. FET socket of Sync. Buck Converter
l
Low Conduction and Switching Losses
l
Compatible with existing Surface Mount Techniques
l
100% Rg tested
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
l
IRF6797MPbF
IRF6797MTRPbF
PD - 97320A
Typical values (unless otherwise specified)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6797MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6797MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
4
Typical RDS(on) (mΩ)
Max.
25
±20
36
29
210
300
260
30
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
g
e
@ 10V
e
@ 10V
f
h
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
20
40
ID= 30A
A
Ãg
mJ
A
ID = 36A
3
2
1
T J = 25°C
0
0
2
4
6
8
10
12
14
16
18
20
T J = 125°C
VDS= 20V
VDS= 13V
60
80
100
120
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
Q G Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.57mH, R
G
= 25Ω, I
AS
= 30A.
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1
03/16/09
IRF6797MTRPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
10
1.1
1.8
1.8
-4.6
–––
–––
–––
–––
–––
45
12
6.2
13
14
19.2
38
1.3
22
32
20
15
5790
1790
720
–––
–––
1.4
2.4
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
mV/°C Reference to 25°C, I
D
= 10mA
mΩ V
GS
= 10V, I
D
= 38A
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 150µA
2.35
V
––– mV/°C V
DS
= V
GS
, I
D
= 10mA
500
µA V
DS
= 20V, V
GS
= 0V
5.0
100
-100
–––
68
–––
–––
–––
–––
–––
–––
2.2
–––
–––
–––
–––
–––
–––
–––
pF
nC
Ω
i
= 30A
i
mA
nA
S
V
DS
= 20V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 13V, I
D
= 30A
V
DS
= 13V
nC
V
GS
= 4.5V
I
D
= 30A
See Fig. 15
V
DS
= 16V, V
GS
= 0V
V
DD
= 13V, V
GS
= 4.5V
I
D
= 30A
R
G
= 1.8Ω
See Fig. 17
V
GS
= 0V
V
DS
= 13V
ƒ = 1.0MHz
ns
Ãi
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
30
38
36
A
300
0.65
45
57
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A
di/dt = 200A/µs
Ãg
i
i
Notes:
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6797MTRPbF
Absolute Maximum Ratings
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
e
Power Dissipation
e
Power Dissipation
f
Power Dissipation
Parameter
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
el
Junction-to-Ambient
jl
Junction-to-Ambient
kl
Junction-to-Case
fl
Junction-to-Ambient
Linear Derating Factor
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
Parameter
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
Junction-to-PCB Mounted
eÃ
W/°C
Thermal Response ( Z thJA )
R
1
R
1
τ
J
τ
J
τ
1
R
2
R
2
R
3
R
3
R
4
R
4
R
5
R
5
R
6
R
6
τ
A
τ
A
τ
1
τ
2
τ
2
τ
3
τ
3
τ
4
τ
4
τ
5
τ
5
Ci=
τi/Ri
Ci
τi/Ri
Ri (°C/W)
1.47e-02
3.04e-01
4.53e-01
3.23e+00
2.28e+01
1.82e+01
τ
i (sec)
1.65e-06
7.16e-04
4.78e-03
1.17e-02
1.05e+00
4.70e+01
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
10
100
1000
t1 , Rectangular Pulse Duration (sec)
(At lower pulse widths Zth
JA
& ZTH
JC
are combined)
Notes:
R
θ
is measured at
T
J
of approximately 90°C.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB
with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6797MTRPbF
1000
TOP
VGS
10V
5.0V
4.3V
3.5V
3.3V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.3V
3.5V
3.3V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10
2.5V
1
1
2.5V
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
≤
60µs PULSE WIDTH
Tj = 150°C
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 15V
≤
60µs PULSE WIDTH
100
T J = 150°C
10
T J = 25°C
T J = -40°C
2.0
Fig 5.
Typical Output Characteristics
ID = 38A
Typical R DS(on) (Normalized)
ID, Drain-to-Source Current (A)
V GS = 10V
1.5
V GS = 4.5V
1.0
1
0.1
1
2
3
4
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
VGS , Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance vs. Temperature
10
T J = 25°C
8
Typical R DS(on) ( mΩ)
Coss = Cds + Cgd
C, Capacitance(pF)
10000
Ciss
Coss
6
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
4
1000
Crss
2
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
0
50
100
150
200
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
ID, Drain Current (A)
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IRF6797MTRPbF
1000
1000
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
10msec
10
DC
1
100µsec
1msec
10
T J = 150°C
T J = 25°C
1
T J = -40°C
VGS = 0V
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-to-Drain Voltage (V)
T A = 25°C
T J = 150°C
Single Pulse
0.1
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
Typical V GS(th) Gate threshold Voltage (V)
220
200
180
ID, Drain Current (A)
Fig11.
Maximum Safe Operating Area
2.5
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 10mA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
1200
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
7.6A
19A
BOTTOM 30A
1000
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy vs. Drain Current
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