MURT10040 thru MURT10060R
Silicon Super Fast
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V V
RRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive
Three Tower Package
V
RRM
= 400 V - 600 V
I
F(AV)
= 100 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MURT10040(R)
400
283
400
-55 to 150
-55 to 150
MURT10060(R)
600
424
600
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current (per leg)
Maximum instantaneous forward
voltage (per leg)
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Maximum reverse recovery time (per
leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
T
rr
Conditions
T
C
= 140 °C
t
p
= 8.3 ms, half sine
I
FM
= 50 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
=0.5 A, I
R
=1.0 A,
I
RR
= 0.25 A
MURT10040(R)
100
1500
1.3
25
1
90
MURT10060(R)
100
1500
1.7
25
1
110
Unit
A
A
V
μA
mA
nS
Thermal characteristics
Maximum thermal resistance, junction
- case (per leg)
R
ΘJC
1.0
1.0
°C/W
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1
MURT10040 thru MURT10060R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/
3
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
GeneSiC Semiconductor
:
MURT10040 MURT10040R MURT10060 MURT10060R
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