PD - 94831
HEXFET
®
Power MOSFET
Logic-Level Gate Drive
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Advanced Process Technology
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Dynamic dv/dt Rating
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175°C Operating Temperature
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Fast Switching
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Fully Avalanche Rated
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Lead-Free
Description
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IRLZ44NPbF
V
DSS
= 55V
D
G
S
R
DS(on)
= 0.022Ω
I
D
= 47A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Max.
47
33
160
110
0.71
±16
210
25
11
5.0
-55 to + 175
300 (1.6mm from case)
10 lbfin (1.1Nm)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Min.
Typ.
0.50
Max.
1.4
62
Units
°C/W
11/11/03
IRLZ44NPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Max. Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
0.022
V
GS
= 10V, I
D
= 25A
0.025
Ω
V
GS
= 5.0V, I
D
= 25A
0.035
V
GS
= 4.0V, I
D
= 21A
2.0
V
V
DS
= V
GS
, I
D
= 250µA
S
V
DS
= 25V, I
D
= 25A
25
V
DS
= 55V, V
GS
= 0V
µA
250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 16V
nA
-100
V
GS
= -16V
48
I
D
= 25A
8.6
nC V
DS
= 44V
25
V
GS
= 5.0V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 25A
ns
R
G
= 3.4Ω, V
GS
= 5.0V
R
D
= 1.1Ω, See Fig. 10
Between lead,
4.5
6mm (0.25in.)
nH
from package
7.5
and center of die contact
1700
V
GS
= 0V
400
pF
V
DS
= 25V
150
= 1.0MHz, See Fig. 5
Min.
55
1.0
21
Typ.
0.070
11
84
26
15
D
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
47
showing the
A
G
integral reverse
160
p-n junction diode.
1.3
V
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
80 120
ns
T
J
= 25°C, I
F
= 25A
210 320
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
D
S
Repetitive rating; pulse width limited by
Notes:
max. junction temperature. ( See fig. 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 470µH
R
G
= 25Ω, I
AS
= 25A. (See Figure 12)
I
SD
≤
25A, di/dt
≤
270A/µs, V
DD
≤
V
(BR)DSS
,
Pulse width
≤
300µs; duty cycle
≤
2%.
T
J
≤
175°C
IRLZ44NPbF
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
10
10
2.5V
2.5V
20µs PULSE WIDTH
T
J
= 25°C
1
10
1
0.1
100
A
1
0.1
20µs PULSE WIDTH
T
J
= 175°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 41A
I
D
, Drain-to-Source Current (A)
2.5
T
J
= 25°C
100
2.0
T
J
= 175°C
1.5
10
1.0
0.5
1
2.0
3.0
4.0
5.0
V
DS
= 25V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRLZ44NPbF
2800
2400
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
iss C
oss
= C
ds
+ C
gd
15
I
D
= 25A
V
DS
= 44V
V
DS
= 28V
12
C, Capacitance (pF)
2000
1600
9
1200
C
oss
6
800
C
rss
400
3
0
1
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
70
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
D
, Drain Current (A)
100
10µs
100
100µs
T
J
= 175°C
T
J
= 25°C
10
1ms
10
0.4
0.8
1.2
1.6
V
GS
= 0V
2.0
A
2.4
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
100
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRLZ44NPbF
50
V
DS
40
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
30
5.0V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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