74V1T79
SINGLE POSITIVE EDGE TRIGGERED
D-TYPE FLIP-FLOP
s
s
s
s
s
s
s
s
HIGH SPEED:
f
MAX
= 180MHz (TYP.) at V
CC
= 5V
t
CK-Q
= 3.9ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
COMPATIBLE WITH TTL OUTPUTS:
V
IH
= 2V (MIN), V
IL
= 0.8V (MAX)
POWER DOWN PROTECTION ON INPUTS
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 8mA (MIN) at V
CC
= 4.5V
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 4.5V to 5.5V
IMPROVED LATCH-UP IMMUNITY
SOT23-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
-
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(s
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s)
P
t(
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P
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PIN CONNECTION AND IEC LOGIC SYMBOLS
DESCRIPTION
The 74V1T79 is an advanced high-speed CMOS
SINGLE POSITIVE EDGE TRIGGERED D-TYPE
FLIP-FLOP fabricated with sub-micron silicon
gate and double-layer metal wiring C
2
MOS
technology. It is designed to operate from 4.5V to
5.5V, making this device ideal for portable
applications.
This D-Type flip-flop is controlled by a clock input
(CK). On the positive transition of the clock, the Q
output will be set to the logic state that was setup
at the D input.
b
O
Following the hold time interval, data at the D input
can be changed without affecting the level at the
output. Power down protection is provided on
inputs and 0 to 7V can be accepted on inputs with
no regard to the supply voltage. This device can
be used to interface 5V to 3V systems.
It’s available in the commercial and extended
temperature range.
All inputs and output are equipped with protection
circuits against static discharge, giving them ESD
immunity and transient excess voltage.
so
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P
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SOT323-5L
s)
t(
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74V1T79STR
74V1T79CTR
s)
t(
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T&R
April 2004
1/9
74V1T79
INPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN N°
1
2
4
3
5
SYMBOL
D
CK
Q
GND
V
CC
NAME AND FUNCTION
Data Input
Clock Input (Positive
Edge)
Flip-Flop Output
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
D
L
H
L
H
CK
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
O
Supply Voltage
DC Input Voltage
DC Output Voltage
Parameter
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
DC Input Diode Current
DC Output Current
I
OK
DC Output Diode Current
I
CC
or I
GND
DC V
CC
or Ground Current
T
stg
T
L
Storage Temperature
Lead Temperature (10 sec)
b
O
so
te
le
r
P
d
o
Value
uc
s)
t(
Q
L
H
Qn
Qn
P
e
-0.5 to +7.0
-0.5 to +7.0
od
r
±
20
±
25
±
50
s)
t(
uc
Unit
V
V
V
mA
mA
mA
mA
°C
°C
-0.5 to V
CC
+ 0.5
- 20
-65 to +150
300
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
V
O
Parameter
Value
4.5 to 5.5
0 to 5.5
0 to V
CC
-55 to 125
0 to 20
Unit
V
V
V
°C
ns/V
Supply Voltage
Input Voltage
Output Voltage
T
op
Operating Temperature
dt/dv
Input Rise and Fall Time (note 1) (V
CC
= 5.0
±
0.5V)
1) V
IN
from 0.8V to 2V
2/9
74V1T79
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
4.5 to
5.5
4.5 to
5.5
4.5
4.5
4.5
4.5
0 to
5.5
5.5
5.5
I
O
=-50
µA
I
O
=-8 mA
I
O
=50
µA
I
O
=8 mA
V
I
= 5.5V or GND
V
I
= V
CC
or GND
One Input at 3.4V,
other input at V
CC
or GND
T
A
= 25°C
Min.
2
0.8
4.4
3.94
0.0
0.1
0.36
±
0.1
1
4.5
4.4
3.8
0.1
0.44
±
1.0
Typ.
Max.
Value
-40 to 85°C
Min.
2
0.8
4.4
3.7
0.1
Max.
-55 to 125°C
Min.
2
0.8
Max.
V
V
V
Unit
V
IH
V
IL
V
OH
V
OL
I
I
I
CC
+I
CC
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
Low Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Additional Worst
Case Supply
Current
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3ns)
Test Condition
C
L
(pF)
15
50
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Symbol
Parameter
V
CC
(V)
T
A
= 25°C
Typ.
3.9
4.5
Min.
t
PLH
t
PHL
Propagation Delay
Time CK to Q
t
W
t
s
t
h
f
MAX
CK Pulse Width,
HIGH or LOW
Setup Time D to
CK, HIGH or LOW
Hold Time D to CK,
HIGH or LOW
Maximum Clock
Frequency
5.0 (*)
5.0 (*)
5.0 (*)
5.0 (*)
5.0 (*)
5.0 (*)
3.0
2.0
1.0
50
120
180
(*) Voltage range is 5.0V
±
0.5V
b
O
so
te
le
Max.
5.5
6.5
1.35
r
P
d
o
10
1.5
ct
u
0.55
±
1.0
20
s)
(
V
µA
µA
P
e
Value
Min.
1.0
1.0
3.0
2.0
1.0
120
od
r
Max.
6.5
7.5
s)
t(
uc
1.5
Max.
7.5
8.5
mA
-40 to 85°C
-55 to 125°C
Min.
1.0
1.0
3.0
2.0
1.0
120
Unit
ns
ns
ns
ns
MHz
CAPACITIVE CHARACTERISTICS
Test Condition
Value
-40 to 85°C
Min.
Max.
10
-55 to 125°C
Min.
Max.
10
pF
pF
Unit
Symbol
Parameter
T
A
= 25°C
Typ.
4
8
Min.
Max.
10
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
(note 1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
3/9
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