MOSFET
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Infineon(英飞凌) |
产品种类 Product Category | MOSFET |
技术 Technology | Si |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | SO-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4 A |
Rds On - Drain-Source Resistance | 80 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 16.7 nC |
Configuration | Dual |
Pd-功率耗散 Pd - Power Dissipation | 1.4 W |
高度 Height | 1.75 mm |
长度 Length | 4.9 mm |
Transistor Type | 1 N-Channel, 1 P-Channel |
宽度 Width | 3.9 mm |
单位重量 Unit Weight | 0.019048 oz |
IRF7309IPBF | |
---|---|
描述 | MOSFET |
Product Attribute | Attribute Value |
制造商 Manufacturer |
Infineon(英飞凌) |
产品种类 Product Category |
MOSFET |
技术 Technology |
Si |
安装风格 Mounting Style |
SMD/SMT |
封装 / 箱体 Package / Case |
SO-8 |
Number of Channels | 2 Channel |
Transistor Polarity | N-Channel, P-Channel |
Vds - Drain-Source Breakdown Voltage | 30 V |
Id - Continuous Drain Current | 4 A |
Rds On - Drain-Source Resistance | 80 mOhms |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 16.7 nC |
Configuration | Dual |
Pd-功率耗散 Pd - Power Dissipation |
1.4 W |
高度 Height |
1.75 mm |
长度 Length |
4.9 mm |
Transistor Type | 1 N-Channel, 1 P-Channel |
宽度 Width |
3.9 mm |
单位重量 Unit Weight |
0.019048 oz |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved