PD - 94925C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
IRGB10B60KDPbF
IRGS10B60KDPbF
IRGSL10B60KDPbF
V
CES
= 600V
I
C
= 19A, T
C
=100°C
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10μs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free
G
E
t
sc
> 10μs, T
J
=150°C
n-channel
V
CE(on)
typ. = 1.8V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
D
2
Pak
TO-262
IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
35
19
44
44
35
19
44
± 20
156
62
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.8
3.4
–––
62
40
–––
Units
°C/W
g
www.irf.com
01/07/13
1
IRG/B/S/SL10B60KDPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
ΔV
(BR)CES
/ΔT
J
V
CE(on)
V
GE(th)
Δ
V
GE(th)
/
Δ
T
J
g
fe
I
CES
V
FM
I
GES
Min.
600
–––
1.5
–––
Gate Threshold Voltage
3.5
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
–––
Zero Gate Voltage Collector Current
–––
–––
Diode Forward Voltage Drop
–––
–––
Gate-to-Emitter Leakage Current
–––
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Typ.
–––
0.3
1.80
2.20
4.5
-10
7.0
3.0
300
1.30
1.30
–––
Max. Units
Conditions
–––
V
V
GE
= 0V, I
C
= 500μA
––– V/°C V
GE
= 0V, I
C
= 1.0mA, (25°C-150°C)
2.20
I
C
= 10A, V
GE
= 15V
2.50
V
I
C
= 10A, V
GE
= 15V
T
J
= 150°C
5.5
V
V
CE
= V
GE
, I
C
= 250μA
––– mV/°C V
CE
= V
GE
, I
C
= 1.0mA, (25°C-150°C)
–––
S
V
CE
= 50V, I
C
= 10A, PW=80μs
150
μA
V
GE
= 0V, V
CE
= 600V
700
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
1.45
I
C
= 10A
1.45
V
I
C
= 10A
T
J
= 150°C
±100 nA
V
GE
= ±20V
Ref.Fig.
5, 6,7
9,10,11
9,10,11
12
8
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Qg
Qge
Qgc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Erec
t
rr
I
rr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Ref.Fig.
Max. Units
Conditions
–––
I
C
= 10A
–––
nC
V
CC
= 400V
CT1
–––
V
GE
= 15V
CT4
247
μJ
I
C
= 10A, V
CC
= 400V
360
V
GE
= 15V,R
G
= 47Ω, L = 200μH
607
Ls = 150nH
T
J
= 25°C
39
I
C
= 10A, V
CC
= 400V
29
V
GE
= 15V, R
G
= 47Ω, L = 200μH
CT4
262
ns
Ls = 150nH, T
J
= 25°C
32
CT4
340
I
C
= 10A, V
CC
= 400V
13,15
464
μJ
V
GE
= 15V,R
G
= 47Ω, L = 200μH
WF1WF2
804
Ls = 150nH
T
J
= 150°C
14, 16
39
I
C
= 10A, V
CC
= 400V
28
V
GE
= 15V, R
G
= 47Ω, L = 200μH
CT4
274
ns
Ls = 150nH, T
J
= 150°C
WF1
34
WF2
–––
V
GE
= 0V
–––
pF
V
CC
= 30V
–––
f = 1.0MHz
4
T
J
= 150°C, I
C
= 44A, Vp =600V
FULL SQUARE
V
CC
= 500V, V
GE
= +15V to 0V,R
G
= 47Ω
CT2
CT3
μs
T
J
= 150°C, Vp =600V,R
G
= 47Ω
10 ––– –––
WF4
V
CC
= 360V, V
GE
= +15V to 0V
17,18,19
––– 245 330
μJ
T
J
= 150°C
20, 21
––– 90 105
ns
V
CC
= 400V, I
F
= 10A, L = 200μH
CT4,WF3
––– 19
22
A
V
GE
= 15V,R
G
= 47Ω, Ls = 150nH
Typ.
38
4.3
16.3
140
250
390
30
20
230
23
230
350
580
30
20
250
26
620
62
22
Note
to
are on page 15
2
www.irf.com
IRG/B/S/SL10B60KDPbF
40
35
30
25
ICE (A)
40
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
ICE (A)
35
30
25
20
15
10
5
0
VGE
VGE
VGE
VGE
VGE
= 18V
= 15V
= 12V
= 10V
= 8.0V
20
15
10
5
0
0
1
2
3
VCE (V)
4
5
6
0
1
2
3
VCE (V)
4
5
6
Fig. 5
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 80μs
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
40
35
30
25
ICE (A)
40
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
IF (A)
35
30
25
20
15
10
5
0
-40°C
25°C
150°C
20
15
10
5
0
0
1
2
3
VCE (V)
4
5
6
0.0
0.5
1.0
1.5
VF (V)
2.0
2.5
3.0
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 150°C; tp = 80μs
Fig. 8
- Typ. Diode Forward Characteristics
tp = 80μs
4
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