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IR2136JTRPBF

产品描述Gate Drivers 3Phs Drvr Sft Trn On Invrt 200ns
产品类别模拟混合信号IC    驱动程序和接口   
文件大小900KB,共36页
制造商Infineon(英飞凌)
官网地址http://www.infineon.com/
标准
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IR2136JTRPBF概述

Gate Drivers 3Phs Drvr Sft Trn On Invrt 200ns

IR2136JTRPBF规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Infineon(英飞凌)
包装说明QCCJ, LDCC44,.7SQ
Reach Compliance Codecompliant
ECCN代码EAR99
Factory Lead Time18 weeks
Samacsys DescriptionINFINEON - IR2136JTRPBF - 3 Phase MOSFET Driver, High Side or Low Side, 625 V Offset, 11.5 V to 20 V Out, 0.2 A Out, PLCC-44
高边驱动器YES
接口集成电路类型HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码S-PQCC-J32
长度16.585 mm
湿度敏感等级3
功能数量1
端子数量32
最高工作温度125 °C
最低工作温度-40 °C
封装主体材料PLASTIC/EPOXY
封装代码QCCJ
封装等效代码LDCC44,.7SQ
封装形状SQUARE
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
电源12/20 V
认证状态Not Qualified
座面最大高度4.57 mm
最大供电电压20 V
最小供电电压10 V
标称供电电压15 V
电源电压1-最大620 V
电源电压1-分钟5 V
电源电压1-Nom15 V
表面贴装YES
技术CMOS
温度等级AUTOMOTIVE
端子形式J BEND
端子节距1.27 mm
端子位置QUAD
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度16.585 mm

文档预览

下载PDF文档
IR213(6,62,63,65,66,67,68)(J&S) & PbF
Data Sheet No. PD60166 revU
IR2136/IR21362/IR21363/IR21365/
IR21366/IR21367/IR21368 (J&S) & (PbF)
3-PHASE BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V (IR2136/
IR21368), 11.5 V to 20 V (IR21362D), or 12 V to 20 V
(IR21363/IR21365/IR21366/IR21367)
Undervoltage lockout for all channels
Over-current shutdown turns off all six drivers
Independent 3 half-bridge drivers
Matched propagation delay for all channels
Cross-conduction prevention logic
Low side output out of phase with inputs. High side outputs
out of phase (IR213(6,63, 65, 66, 67, 68)), or in phase
(IR21362) with inputs
3.3 V logic compatible
Lower di/dt gate drive for better noise immunity
Externally programmable delay for automatic fault clear
All parts are LEAD-FREE
Packages
28-Lead SOIC
28-Lead PDIP
44-Lead PLCC w/o 12 Leads
Description
Feature Comparison:
IR213(6,62,63,65,66,67,68)
Part
IR2136
IR21362
IR21363
IR21365
IR21366
IR21367
IR21368
The IR2136x (J&S) are high voltage, high
___ ___
___
___ ___
___ ___
___ ___
___ ___
___ ___
Input Logic
speed power MOSFET and IGBT drivers with
HIN, LIN
HIN, LIN
HIN, LIN
HIN, LIN
HIN, LIN
HIN, LIN
HIN, LIN
three independent high and low side
Ton (typ.)
400 ns
400 ns
400 ns
400 ns
250 ns
250 ns
400 ns
referenced output channels for 3-phase
Toff (typ.)
380ns
380 ns
380 ns
380 ns
180 ns
180 ns
380 ns
applications. Proprietary HVIC technology
V (typ.)
2.7 V
2.7 V
2.7 V
2.7 V
2.0 V
2.0 V
2.0 V
V (typ.)
1.7 V
1.7 V
1.7 V
1.7 V
1.3 V
1.3 V
1.3 V
enables ruggedized monolithic construction.
Vitrip+
0.46 V
0.46 V
0.46 V
4.3 V
0.46 V
4.3 V
4.3 V
Logic inputs are compatible with CMOS or
UVCC/BS+
8.9 V
10.4 V
11.2 V
11.2 V
11.2 V
11.2 V
8.9 V
LSTTL outputs, down to 3.3 V logic. A current
UVCC/BS-
8.2 V
9.4 V
11.0 V
11.0 V
11.0 V
11.0 V
8.2 V
trip function which terminates all six outputs
can be derived from an external current sense resistor. An enable function is available to terminate all six outputs simultaneously. An
open-drain FAULT signal is provided to indicate that an overcurrent or undervoltage shutdown has occurred. Overcurrent fault
conditions are cleared automatically after a delay programmed externally via an RC network connected to the RCIN input. The output
drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to
simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or IGBTs in the
high side configuration which operates up to 600 V.
IH
IL
Typical Connection
www.irf.com
1

IR2136JTRPBF相似产品对比

IR2136JTRPBF IR2136JPBF PFC-UD1206-11-1692-1692-A-Q-1 IR21365STRPBF IR21365SPbF IR2151PBF
描述 Gate Drivers 3Phs Drvr Sft Trn On Invrt 200ns Gate Drivers 3 PHASE DRVR SOFT TURN-ON Array/Network Resistor, Divider, 0.05% +/-Tol, 15ppm/Cel, Surface Mount, 0612, CHIP Gate Drivers 3Phs Drvr Sft Trn On Invrt 200ns Gate Drivers 3 PHASE DRVR HI & LO SIDE INPUTS Gate Drivers
是否Rohs认证 符合 符合 不符合 符合 符合 -
厂商名称 Infineon(英飞凌) Infineon(英飞凌) - Infineon(英飞凌) Infineon(英飞凌) -
包装说明 QCCJ, LDCC44,.7SQ QCCJ, LDCC44,.7SQ , 0612 SOP, SOP, SOP28,.4 -
Reach Compliance Code compliant compliant compliant compliant compliant -
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 -
高边驱动器 YES YES - YES YES -
接口集成电路类型 HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER - HALF BRIDGE BASED MOSFET DRIVER HALF BRIDGE BASED MOSFET DRIVER -
JESD-30 代码 S-PQCC-J32 S-PQCC-J32 - R-PDSO-G28 R-PDSO-G28 -
长度 16.585 mm 16.585 mm - 17.9 mm 17.9 mm -
湿度敏感等级 3 3 - 3 3 -
功能数量 1 1 1 1 1 -
端子数量 32 32 3 28 28 -
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C -
最低工作温度 -40 °C -40 °C -55 °C -40 °C -40 °C -
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY -
封装代码 QCCJ QCCJ - SOP SOP -
封装形状 SQUARE SQUARE RECTANGULAR PACKAGE RECTANGULAR RECTANGULAR -
封装形式 CHIP CARRIER CHIP CARRIER SMT SMALL OUTLINE SMALL OUTLINE -
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
座面最大高度 4.57 mm 4.57 mm - 2.65 mm 2.65 mm -
最大供电电压 20 V 20 V - 20 V 20 V -
最小供电电压 10 V 10 V - 12 V 12 V -
标称供电电压 15 V 15 V - 15 V 15 V -
表面贴装 YES YES YES YES YES -
技术 CMOS BICMOS THIN FILM - CMOS -
温度等级 AUTOMOTIVE AUTOMOTIVE - AUTOMOTIVE AUTOMOTIVE -
端子形式 J BEND J BEND - GULL WING GULL WING -
端子节距 1.27 mm 1.27 mm - 1.27 mm 1.27 mm -
端子位置 QUAD QUAD - DUAL DUAL -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
宽度 16.585 mm 16.585 mm - 7.5 mm 7.5 mm -
其他特性 - FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT ULTRA PRECISION FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT -

 
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