AS6C8016A
Low Power, 512Kx16 SRAM
Revision History
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision No
1.0
2.0
3.0
History
Initial Issue
tDW updated to 25ns
Update USA HQ moved - change of address
Date
August 2010
October 2012
September 2014
Remark
Preliminary
Alliance Memory Inc.
511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc.
reserves the right to change products or specification without notice.
1
Rev. 3.0
Sep /2014
AS6C8016A
Low Power, 512Kx16 SRAM
FEATURES
•
•
•
•
•
•
•
•
Process Technology : 0.15m Full CMOS
Organization : 512K x 16 bit
Power Supply Voltage : 2.7V ~ 3.6V
Low Data Retention Voltage : 1.5V(Min.)
Three state output and TTL Compatible
Package Type : 48-FPBGA
dual CS – A6 is CS2
All parts are ROHS Compliant
GENERAL DESCRIPTION
The AS6C8016A families are fabricated by advanced
full CMOS process technology. The families support
industrial temperature range and Chip Scale Package
for user flexibility of system design. The families also
support low data retention voltage for battery back- up
operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product
Family
Operating
Temperature
Industrial
(-40 ~ 85
o
C)
Vcc
Range
Speed
Standby
(I
SB1
, Typ.)
2
A
1)
Operating
(I
CC1
.Max.)
4 mA
PKG
Type
AS6C8016A-55BIN
2.7 ~ 3.6 V
55 ns
48-FPBGA
FUNCTIONAL BLOCK DIAGRAM
Pre-charge Circuit
A10
DQ0 ~ DQ7
DQ8 ~ DQ15
Data
Cont
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
V
CC
Row Select
V
SS
Memory Array
2048 x 4096
Data
Cont
I/O Circuit
Column Select
A11 A12 A13 A14 A15 A16 A17 A18
WE
OE
UB
LB
CS1
CS2
Control Logic
Alliance Memory Inc.
511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc.
reserves the right to change products or specification without notice.
2
Rev. 3.0
Sep /2014
AS6C8016A
Low Power, 512Kx16 SRAM
PIN CONFIGURATIONS
FPBGA-48 : Top view(ball down) - dual CS – A6 is CS2
1
A
B
C
D
E
F
G
H
LB
2
OE
UB
3
A0
4
A1
5
A2
CS 1
6
CS2
DQ8
DQ9
A3
A5
A17
NC
A14
A12
A9
A4
A6
A7
A16
A15
A13
A10
DQ0
DQ2
DQ10
DQ11
DQ12
DQ13
NC
A8
DQ1
DQ3
DQ4
DQ5
WE
A11
V
V
SS
V
CC
CC
V
SS
DQ14
DQ15
A18
DQ6
DQ7
NC
PIN DESCRIPTION
Name
CS1, CS2
OE
WE
A0~A18
DQ0~DQ15
Function
Chip Select inputs
Output Enable input
Write Enable input
Address inputs
Data inputs/outputs
Name
V
CC
V
SS
UB
LB
NC
Function
Power Supply
Ground
Upper Byte (DQ8~DQ15)
Lower Byte (DQ0~DQ7)
No Connection
Alliance Memory Inc.
511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc.
reserves the right to change products or specification without notice.
3
Rev. 3.0
Sep /2014
AS6C8016A
Low Power, 512Kx16 SRAM
ABSOLUTE MAXIMUM RATINGS
1)
Parameter
Voltage on Any Pin Relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Operating Temperature
Symbol
V
IN
, V
OUT
V
CC
P
D
T
A
Ratings
-0.2 to 4.0
-0.2 to 4.0
1.0
-40 to 85
Unit
V
V
W
o
C
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
FUNCTIONAL DESCRIPTION
CS1
H
X
X
L
L
L
L
L
L
L
L
CS2
X
L
X
H
H
H
H
H
H
H
H
OE
X
X
X
H
H
L
L
L
X
X
X
WE
X
X
X
H
H
H
H
H
L
L
L
LB
X
X
H
L
X
L
H
L
L
H
L
UB
X
X
H
X
L
H
L
L
H
L
L
DQ0~7
High-Z
High-Z
High-Z
High-Z
High-Z
Data Out
High-Z
Data Out
Data In
High-Z
Data In
DQ8~15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Data Out
Data Out
High-Z
Data In
Data In
Mode
Deselected
Deselected
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Stand by
Stand by
Stand by
Active
Active
Active
Active
Active
Active
Active
Active
NOTE:
X means don’t care. (Must be low or high state)
Alliance Memory Inc.
511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc.
reserves the right to change products or specification without notice.
4
Rev. 3.0
Sep /2014
AS6C8016A
Low Power, 512Kx16 SRAM
RECOMMENDED DC OPERATING CONDITIONS
1)
Parameter
Supply voltage
Ground
Input high voltage
Input low voltage
1.
2.
3.
4.
Symbol
V
CC
V
SS
V
IH
V
IL
Min
2.7
0
2.2
-0.2
3)
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+ 0.2
2)
0.6
Unit
V
V
V
V
TA= -40 to 85
o
C, otherwise specified
Overshoot: VCC +2.0 V in case of pulse width < 20ns
Undershoot: -2.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f =1MHz, T
A
=25
o
C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Parameter
Input leakage current
Output leakage current
Operating power supply
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating
current
I
CC2
V
IN
=V
SS
to V
CC
CS1=V
IH
or CS2=V
IL
or OE=V
IH
or WE=V
IL
or LB=UB=V
IH
V
IO
=V
SS
to V
CC
I
IO
=0mA, CS1=V
IL
, CS2=WE=V
IH,
V
IN
=V
IH
or V
IL
Cycle time=1s, 100% duty, I
IO
=0mA,
CS1<0.2V, CS2>V
CC
-0.2V, LB<0.2V or/and UB<0.2V,
V
IN
<0.2V or V
IN
>V
CC
-0.2V
Cycle time = Min, I
IO
=0mA, 100% duty,
CS1=V
IL
, CS2=V
IH,
LB=V
IL
or/and UB=V
IL ,
V
IN
=V
IL
or V
IH
I
OL
= 2.1mA
I
OH
= -1.0mA
CS1 =V
IH
, CS2=V
IL,
Other inputs=V
IH
or V
IL
CS1 >V
CC
-0.2V, CS2>V
CC
-0.2V (CS1 controlled)
or 0 V<CS2<0.2V (CS2 controlled),
Other inputs = 0~V
CC
(Typ. condition : V
CC
=3.3V @ 25 C)
o
(Max. condition : V
CC
=3.6V @ 85 C)
o
Test Conditions
Min
-1
-1
-
-
Typ
-
-
-
-
Max
1
1
2
4
Unit
A
A
mA
mA
55ns
-
-
35
mA
Output low voltage
Output high voltage
Standby Current (TTL)
V
OL
V
OH
I
SB
-
2.4
-
-
-
-
0.4
-
0.5
V
V
mA
Standby Current (CMOS)
I
SB1
LF
-
2
1)
15
A
1. Typical values are measured at Vcc=3.3V, T
A
=25
o
C and not 100% tested.
Alliance Memory Inc.
511 Taylor Way, San Carlos, CA 94070
TEL: (650) 610-6800
FAX: (650) 620-9211
Alliance Memory Inc.
reserves the right to change products or specification without notice.
5
Rev. 3.0
Sep /2014
嵌入式系统
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