VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 5 A
FEATURES
• 175 °C T
J
operation
• Low forward voltage drop
Cathode
Anode
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength
and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
DO-204AR
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
DO-204AR
5A
60 V, 80 V, 100 V
0.52 V
7.0 mA at 125 °C
175 °C
Single die
7.5 mJ
• Designed and qualified for commercial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-50SQ... axial leaded Schottky rectifier series has
been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable
operation up to 175 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
5 Apk, T
J
= 125 °C
Range
VALUES
5
60 to 100
1900
0.52
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-50SQ060
VS-50SQ080
VS-50SQ100
VS-50SQ060-M3 VS-50SQ080-M3 VS-50SQ100-M3
60
80
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 119 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
T
J
= 25 °C, I
AS
= 1.0 A, L = 15 mH
Current decaying linearly to zero in 1 μs
Frequency limited by, T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
5
1900
290
7.5
1.0
mJ
A
A
UNITS
Revision: 19-Sep-11
Document Number: 93355
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
5A
Maximum forward voltage drop
See fig. 1
V
FM (1)
10 A
5A
10 A
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.66
0.77
0.52
0.62
0.55
7
500
10
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Typical thermal resistance,
junction to air
Approximate weight
SYMBOL
T
J
, T
Stg
R
thJL
R
thJA
DC operation; see fig. 4
1/8" lead length
TEST CONDITIONS
VALUES
- 55 to 175
8.0
°C/W
44
1.4
0.049
50SQ060
Marking device
Case style DO-204AR (JEDEC)
50SQ080
50SQ100
g
oz.
UNITS
°C
Revision: 19-Sep-11
Document Number: 93355
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
Vishay Semiconductors
100
T
J
= 175 °C
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
10
1
0.1
0.01
0.001
0.0001
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
93355_02
20
40
60
80
100
93355_01
V
FM
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
93355_03
20
40
60
80
100
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
= 1/8 inch
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
D = 0.01
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
0.01
0.1
1
P
DM
t
1
t
2
0.1
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
10
100
93355_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJL
Characteristics
Revision: 19-Sep-11
Document Number: 93355
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
Vishay Semiconductors
3.5
Allowable Case Temperature (°C)
175
Average Power Loss (W)
170
165
160
R
thJL
(DC) = 8.0 °C/W
3
2.5
2
1.5
1
0.5
0
D = 0.08
D = 0.17
D = 0.25
D = 0.33
D = 0.50
DC
RMS Limit
DC
155
150
145
0
2
4
6
8
= 1/8 inch
012345678
93355_06
93355_05
I
F(AV)
- Average Forward Current (A)
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
10 000
At any rated load condition
and with rated V
RRM
applied
following
surge
1000
100
10
100
1000
10 000
93355_07
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Revision: 19-Sep-11
Document Number: 93355
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50SQ060 (-M3), VS-50SQ080 (-M3), VS-50SQ100 (-M3)
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
50
2
S
3
Q
4
100
5
TR
6
-M3
7
Vishay Semiconductors product
50 = Current x 10
S = DO-204AR
Q = Schottky Q series
Voltage rating
TR = Tape and reel package
None = Bulk package
060 = 60 V
080 = 80 V
100 = 100 V
-
Environmental digit
None = Lead (Pb)-free and RoHS compliant
-M3 = Halogen-free, RoHS compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-50SQ060
VS-50SQ060TR
VS-50SQ060-M3
VS-50SQ060TR-M3
VS-50SQ080
VS-50SQ080TR
VS-50SQ080-M3
VS-50SQ080TR-M3
VS-50SQ100
VS-50SQ100TR
VS-50SQ100-M3
VS-50SQ100TR-M3
QUANTITY PER T/R
300
1500
300
1500
300
1500
300
1500
300
1500
300
1500
MINIMUM ORDER QUANTITY
300
1500
300
1500
300
1500
300
1500
300
1500
300
1500
PACKAGING DESCRIPTION
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
Bulk
Tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95243
www.vishay.com/doc?95325
www.vishay.com/doc?95338
www.vishay.com/doc?95394
Revision: 19-Sep-11
Document Number: 93355
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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