SMD Zener Diode
SMD Diodes Specialist
CZRSC55C2V0-G Thru CZRSC55C36-G
Voltage: 2.0 to 36 Volts
Power: 0.5 Watts
RoHS Device
Features
- This diode is also available in other case styles
including the 1206 case with the type designation.
- Sillcon Planar Power Zener Diode.
0.086(2.20)
0.071(1.80)
0805
12
0.057(1.45)
0.041(1.05)
Mechanical data
- Case: 0805
- Weight: approx. 6mg
- Marking: Cathode band.
0.026(0.65)
0.010(0.25)
0.037(0.95)
0.029(0.75)
Dimensions in inches and (millimeter)
Maximum Rating and Thermal Characteristics (Tamb = 25°C )
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Ambient Air
Symbol
P
tot
T
J
T
STG
Rө
JA
Value
500
175
-65 to +175
300
Unit
mW
°C
°C
°C/W
Electrical Characteristics
Parameter
Forward voltage I
F
=200mA
Symbol
V
F
Max
1.5
Unit
V
REV:A
QW-BZ023
Page 1
Comchip Technology CO., LTD.
SMD Zener Diode
SMD Diodes Specialist
Electrical Characteristics(Ta = 25°C)
Nominal
Zener Voltage
VZ @ IZT
Min V
Max V
2.10
2.31
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
Maximum
Zener Impedance
ZZT @ IZT
(Ω)
85
85
85
85
85
85
85
85
80
70
50
30
10
8
7
7
10
15
20
20
26
30
40
50
55
55
80
80
80
80
80
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
ZZK @ IZK
(Ω)
600
600
600
600
600
600
600
600
600
600
550
450
200
150
50
50
50
70
70
90
110
110
170
170
220
220
220
220
220
220
220
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Part Number
Maximum
Maximum Reverse
DC Zener
Leakage Current
Marking
Current
Code
IR @ VR
(uA)
100
75
50
10
4
2
2
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
(V)
4.0
5.2
6.0
6.5
7.0
8.0
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
IZM
(mA)
241
440
400
364
328
300
272
250
230
200
186
166
150
136
124
110
100
90
82
76
68
62
58
52
48
44
40
36
32
30
13
2V0
2V2
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
CZRSC55C2V0-G
CZRSC55C2V2-G
CZRSC55C2V4-G
CZRSC55C2V7-G
CZRSC55C3V0-G
CZRSC55C3V3-G
CZRSC55C3V6-G
CZRSC55C3V9-G
CZRSC55C4V3-G
CZRSC55C4V7-G
CZRSC55C5V1-G
CZRSC55C5V6-G
CZRSC55C6V2-G
CZRSC55C6V8-G
CZRSC55C7V5-G
CZRSC55C8V2-G
CZRSC55C9V1-G
CZRSC55C10-G
CZRSC55C11-G
CZRSC55C12-G
CZRSC55C13-G
CZRSC55C15-G
CZRSC55C16-G
CZRSC55C18-G
CZRSC55C20-G
CZRSC55C22-G
CZRSC55C24-G
CZRSC55C27-G
CZRSC55C30-G
CZRSC55C33-G
CZRSC55C36-G
1.90
2.09
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
REV:A
QW-BZ023
Page 2
Comchip Technology CO., LTD.
SMD Zener Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CZRSC552V0-G Thru CZRSC55C36-G)
Fig.1 Typical thermal resistance v.s. lead length
Rthja,Therm Resist Junction / Ambient , (K/W)
Fig.2 Total Power Dissipation vs. Ambient Temperature
600
Ptot , Total Power Dissipation, (mW)
500
400
300
200
100
0
500
400
300
200
100
0
0
5
10
I - Lead length , (mm)
15
20
0
40
80
120
160
200
T
amb
- Ambient Temperature , (°C)
Fig.3 Typical Change of Working Voltage Under Operating
Conditions at Tamb=25°C
1000
Vzn - Relative Voltage Change
Fig.4 Maximum surge power
1.3
1.2
Vz , Voltage change , (mV)
100
T
j
=25°C
1.1
1.0
I
Z
=5mA
10
0.9
0.8
1
0
5
10
15
20
25
TJ - Junction Temperature , (
°C)
Vz-Z-Voltage , (V)
-60
0
60
120
180
240
Fig.5- Temperature Coefficient of Vz vs Z-Voltage
15
Temperature Coefficient of Vz(10 / K)
-4
Fig.6-Diode Capacitance vs. Z-Voltage
200
CD - Diode Capacitance , (pF)
10
150
5
100
I
Z
=5mA
0
V
R
=2V
T
j
=25°C
50
-5
0
10
20
30
40
50
0
0
5
10
15
20
25
Vz-Z- Voltage , (V)
Vz-Z- Voltage , (V)
REV:A
QW-BZ023
Page 3
Comchip Technology CO., LTD.
SMD Zener Diode
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (CZRSC552V0-G Thru CZRSC55C36-G)
Fig.7- Forward Current Forward Voltage
100
50
P
tot
=500mW
T
AMB
=25°C
Fig.4- Z-Current vs. Z-Voltage
I
F
- Forward Current , (mA)
10
Iz - Z-Current , (mA)
40
1
30
0.1
20
0.01
10
0
0.001
0
0.2
0.4
0.6
0.8
1.0
15
20
25
V
Z
-Z-Voltage , (V)
30
35
V
F
- Forward Voltage , (V)
Fig.8- Z-Current vs. Z-Voltage
100
1000
Fig.10- Differential Z-Resistance vs. Z-Voltage
80
Iz - Z-Current , (mA)
Iz - Z-Current , (mA)
I
Z
=1mA
100
5mA
60
40
10
10mA
20
1
0
T
j
=25°C
0
4
8
12
16
20
5
10
15
20
25
0
Vz-Z- Voltage,(V)
V
Z
-Z-Voltage(V)
Fig.10- Thermal Tesponse
1000
Zthp - Themal Resistance for
Pulse Cond, (K/W)
T
p
/T=0.5
100
Tp/T=0.2
Single Pulse
Tp/T=0.01
10
Tp/T=0.1
Tp/T=0.02
Tp/T=0.05
R
thJA
=300k/W
T=Tjmax-Tamb
1
0
i
ZM
=-V
Z
+ V
Z
+4rzj X T/Z thp) ½ )/(2rzj)
10
0
2
10
1
10
2
tp - Pulse Length , (ms)
REV:A
QW-BZ023
Page 4
Comchip Technology CO., LTD.
SMD Zener Diode
SMD Diodes Specialist
Reel Taping Specification
P
0
P
1
d
Index hole
E
T
F
B
Polarity
W
C
P
A
12
0
o
D
2
D
1
D
W
1
Trailer
.......
.......
10 pitches (min)
Device
.......
.......
.......
.......
Leader
.......
.......
10 pitches (min)
End
Start
Direction of Feed
SYMBOL
A
1.65
±
0.20
0.065
±
0.008
B
2.40
±
0.20
C
0.95
±
0.05
d
1.50
±
0.10
0.059
±
0.004
D
178.0
±
1.00
7.007±0.040
D
1
60.0
±
1.00
2.362±0.040
D
2
13.0
±0.30
0.512
±
0.012
0805
(mm)
(inch)
0.094
±
0.008 0.037
±
0.002
SYMBOL
E
1.75
±
0.10
0.689
±
0.004
F
3.50
±
0.10
0.138
±
0.004
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.05
0.079
±
0.002
W
8.00
±
0.20
0.315
±
0.008
W
1
9.50
±
0.30
0.374
±0.012
0805
(mm)
(inch)
REV:A
QW-BZ023
Page 5
Comchip Technology CO., LTD.
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
