TAT7467H
CATV 75
pHEMT Dual RF Amplifier
Applications
Replacement for 5 V SOIC-8 Amplifiers
Edge QAM Output Stage
MDU Output
Distribution Amplifiers
Transmitter Driver Amplifier
SOIC-8 package
Product Features
75 Ω, 40-1002 MHz Bandwidth
pHEMT device technology
Meets DOCSIS 3.0 Output Requirements
5 V supply voltage
380 mA typical current consumption
On-chip Linearization
SOIC-8 package
Functional Block Diagram
RF Input A
1
8
RF Output A
2
7
3
6
RF Input B
4
5
RF Output B
General Description
The TAT7467H is a 75 Ω fully integrated single-die
differential RF Amplifier covering medium power
applications in the CATV band. The TAT7467H includes
on-chip linearization to improve 3
rd
order distortion
performance while maintaining low power consumption
on a 5 V supply. It is fabricated using 6 inch GaAs
pHEMT technology to optimize performance and cost.
Pin Configuration
Pin #
1
2
3
4
5
6
7
8
9
Symbol
RF Input A
Linearizer A
Linearizer B
RF Input B
RF Output B
Biasing 2
Biasing 1
RF Output A
Ground Slug
Ordering Information
Part No.
TAT7467H
TAT7467H-EB
75
Dual pHEMT Amplifier
(lead-free/RoHS compliant SOIC-8 Pkg)
Description
Amplifier Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev G 12-04-12
© 2012 TriQuint Semiconductor, Inc.
-
1 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
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TAT7467H
CATV 75
pHEMT Dual RF Amplifier
Specifications
Absolute Maximum Ratings
1
Parameter
Device Voltage
Storage Temperature
Operating Temperature
Recommended Operating Conditions
Parameter
V
DD
I
DD
T
J
(for > 10
6
hours MTTF)
Rating
+10 V
-60 to +150
o
C
-40 to +85
o
C
Min
Typ
5
380
Max Units
145
V
mA
o
C
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC case temperature, +5 V V
DD
Parameter
Operational Frequency Range
Gain
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
EQAM Output Out-of-band Spurious
and Noise for single channel on a single
port
Vout = 62 dBmV/ch
P1dB
OIP3
Equivalent Harmonics
V
SUPPLY
I
DD
Thermal Resistance (jnc. To case)
jc
Conditions
See Note 1
Min
50
Typical
16.5
+/- 0.75
4.7
18
23
Max
1002
Units
MHz
dB
dB
dB
dB
dB
dBc
Adjacent, See Note 2 and
Note 3
-62
See Note 4
See Note 5
24
43
-63
+5
380
14.5
dBm
dBm
dBc
V
mA
o
C/W
Notes:
1. Peak deviation from straight line across full band.
2. Production tested at 66 MHz, 330 MHz, and 990 MHz.
3. Adjacent channel (750 kHz from channel block edge to 6 MHz from channel block edge).
4. 100 MHz tone spacing at 0 dBm/tone.
5. Spurious and noise levels in channels coinciding with 2
nd
harmonic or 3
rd
harmonic.
Data Sheet: Rev G 12-04-12
© 2012 TriQuint Semiconductor, Inc.
-
2 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7467H
CATV 75
pHEMT Dual RF Amplifier
Bill of Material: TAT7467H-PCB
Reference Des.
U1
L5
T1, T2
C3, C4, C10, C15, C16
C5, C6, C7, C13, C14, C17
R12, R13
R14
R15
R21
R22, R23
C1, C2
L2, L3
L1
C18, C19
L4
B1, B2
C8, C9, C21
--
2.7nH
1:1
0.5pF
0.01uF
1.21kΩ
750Ω
1Ω
12Ω
1.5Ω
0.1uF
500nH
0.9uH
270pF
5.6nH
600 Ω
DNP
Value
Description
75 Ohm RF Amplifier
Ind, wirewound, 0402, 640 mA,
5%
1:1 Balun
Cap, ceramic, 0402, 50 V, +/-
0.25 pF
Cap, ceramic, 0402, 16 V, 10%
Res, thick film, 0402, 1/16 W,
1%
Res, thick film, 0402, 1/16 W,
1%
Res, thick film, 1206, 5%
Res, thick film, 1206, 5%
Res, thick film, 0402, 1/16 W,
1%
Cap, ceramic, 0402, 16 V, 10%
Ind, bead, 1206, 260 mA, 10%
Ind, High Current, 1008, 10%
Cap, ceramic, 0402, 50 V, 10%
Ind, wirewound, 0402, 760 mA,
5%
Bead 600 Ω 0402 300 mA
Do Not Place
Manuf.
TriQuint
Various
Part Number
TAT7467H
Minicircuits TC1-33-75G2+
Various
Various
Various
Various
Various
Various
Various
Various
Murata
Coilcraft
Various
Various
Murata
BLM15HG601SN1
LQH31HNR50K03
1008AF-901XKL
Detailed Device Description
The TAT7467H is a flexible 5 V differential amplifier for medium power CATV applications. The amplifier of the
TAT7467H was specially designed to work with on-chip linearization to provide 3
rd
order distortion improvement over a wide
range of RF power levels and across the full CATV bandwidth. Operation of the linearizer will not affect overall gain by more
than 0.7 dB.
For any amplifier bias current, output 3
rd
order distortion may be improved by adjusting a small bias current of the on-chip
linearization circuit. The Application Schematic shows resistors setting the linearizer currents. Alternate linearizer drive
circuitry is possible; consult TriQuint for discussion.
Bias current may be adjusted with changes to external components making the TAT7467H ideal for both input and output gain
stages in an EdgeQAM amplifier line-up. For output stage applications, bias currents of between 300 mA to 400 mA are
recommended. For input stage applications, bias currents of 230 mA to 280 mA are recommended.
The TAT7467H is built using a single die, which significantly improves its resulting circuit balance and corresponding 2
nd
order distortion performance. For best 2
nd
order performance, an input balun using a 3
rd
wire construction may be used to
improve the input phase balance going into the TAT7467H.
The TAT7467H is packaged in an industry standard SOIC-8 package with a large exposed paddle to enable good heatflow to a
backside heatsink. At the maximum recommended bias current of 400 mA the power consumption will be 2 W. The
Data Sheet: Rev G 12-04-12
© 2012 TriQuint Semiconductor, Inc.
-
4 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
TAT7467H
CATV 75
pHEMT Dual RF Amplifier
TAT7467H is fabricated using a mature pHEMT process that has demonstrated outstanding reliability performance on other
TriQuint products. Please consult TriQuint for further information,
sjcapplication.engineering@tqs.com
.
Package Information and Dimensions
Marking:
Product Number – TAT7467H
Assembly Code - AaXXXX
Year/Week Code – YYWW
This package is lead-free/RoHS-compliant.
The plating material on the leads is 100% Matte Tin.
It is compatible with both lead-free (maximum 260 °C reflow temperature)
and lead (maximum 245 °C reflow temperature) soldering processes
TAT7467H
AaXXXX
YYWW
Pin 1
Data Sheet: Rev G 12-04-12
© 2012 TriQuint Semiconductor, Inc.
-
5 of 7
-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network
®
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