PD-96026A
IRF7703PbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
!
"
#
V
DSS
-40V
R
DS(on)
max (mW)
28@V
GS
= -10V
45@V
GS
= -4.5V
I
D
-6.0A
-4.8A
Description
HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides the de-
9
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%
$
signer with an extremely efficient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
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TSSOP-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-40
-6.0
-4.7
-24
1.5
0.96
0.012
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
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1
05/15/09
IRF7703PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-40
–––
–––
–––
-1.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.030
–––
–––
–––
–––
–––
–––
–––
–––
41
16
16
43
405
155
77
5220
416
337
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
28
V
GS
= -10V, I
D
= -6.0A
mΩ
45
V
GS
= -4.5V, I
D
= -4.8A
-3.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -6.0A
-15
V
DS
= -32V, V
GS
= 0V
µA
-25
V
DS
= -32V, V
GS
= 0V, T
J
= 70°C
-100
V
GS
= -20V
nA
100
V
GS
= 20V
62
I
D
= -6.0A
25
nC
V
DS
= -20V
24
V
GS
= -4.5V
–––
V
DD
= -20V
–––
I
D
= -1.0A
ns
–––
R
G
= 6.0Ω
–––
V
GS
= -10V
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
34
56
-1.5
-24
-1.2
51
84
V
ns
nC
A
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.5A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF7703PbF
10000
1000
100
10
1
0.1
0.01
0.001
0.1
1
10
100
VGS
TOP
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
1000
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
100
VGS
-15V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
BOTTOM -2.7V
TOP
10
-2.7V
20µs PULSE WIDTH
Tj = 25°C
1
-2.7V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.0
I
D
= -6.0A
-I
D
, Drain-to-Source Current (A)
T
J
= 150
°
C
10
1.5
1
T
J
= 25
°
C
1.0
0.1
0.5
0.01
2.0
V DS= -15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
5.0
0.0
-60 -40 -20
V
GS
= -10V
0
20 40 60 80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7703PbF
100000
-V
GS
, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + C
ds
gd
20
I
D
=
-6.0
V
DS
=
-
32V
V
DS
=
-
20V
16
C, Capacitance(pF)
10000
Ciss
12
1000
8
Coss
Crss
4
100
1
10
100
0
0
30
60
90
120
150
-V DS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
-I D , Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
10
100µsec
1msec
1
T
J
= 25
°
C
1
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
10msec
0.1
0.4
V
GS
= 0 V
0.6
0.8
1.0
1.2
0.1
-V
SD
,Source-to-Drain Voltage (V)
100
1000
-V DS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7703PbF
6.0
V
DS
4.8
R
D
V
GS
R
G
-I
D
, Drain Current (A)
D.U.T.
+
3.6
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2.4
Fig 10a.
Switching Time Test Circuit
1.2
t
d(on)
t
r
t
d(off)
t
f
V
GS
0.0
10%
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response (Z
thJC
)
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
=P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
10
100
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
V
DD
5
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