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BYG24JHE3/TR3

产品描述Rectifiers 1.5A 600 Volt 140ns
产品类别分立半导体    二极管   
文件大小85KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

BYG24JHE3/TR3概述

Rectifiers 1.5A 600 Volt 140ns

BYG24JHE3/TR3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码DO-214AC
包装说明R-PDSO-C2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
Base Number Matches1

文档预览

下载PDF文档
BYG24D-E3/HE3, BYG24G-E3/HE3, BYG24J-E3/HE3
www.vishay.com
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristics
• Fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMA
(DO-214AC)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
t
rr
E
R
T
J
max.
Package
Diode variation
1.5 A
200 V, 400 V, 600 V
30 A
1.0 μA
1.25 V
140 ns
20 mJ
150 °C
SMA (DO-214AC)
Single
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current at T
A
= 65 °C
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG24D
BYG24D
200
BYG24G
BYG24G
400
1.5
30
20
-55 to +150
BYG24J
BYG24J
600
V
A
A
mJ
°C
UNIT
Revision: 08-Mar-17
Document Number: 88960
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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