• Telecom / server 48 V, full- / half-bridge DC/DC
• Industrial and 42 V automotive
D
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
R
DS(on)
max. () at V
GS
= 6 V
Q
g
typ. (nC)
I
D
(A)
Configuration
100
0.034
0.040
24
7.8
Single
G
N-Channel MOSFET
S
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
PowerPAK SO-8
Si7454DP-T1-E3
Si7454DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current (T
J
= 150 °C)
a
Pulsed drain current
Avalanche current
Single avalanche energy (duty cycle
1 %)
Continuous source current (diode conduction)
a
Maximum power dissipation
a
T
A
= 25 °C
T
A
= 85 °C
L = 0.1 mH
T
A
= 25 °C
T
A
= 85 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
I
S
P
D
T
J
, T
stg
10 s
100
± 20
7.8
5.7
30
25
31
4
4.8
2.6
STEADY STATE
100
± 20
5
3.6
30
25
31
1.6
1.9
1
-55 to +150
260
UNIT
V
A
mJ
A
W
°C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
b, c
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
a
Maximum junction-to-case (drain)
t
10 s
Steady state
Steady state
SYMBOL
R
thJA
R
thJC
TYPICAL
21
55
1.6
MAXIMUM
26
65
2
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S09-0227-Rev. D, 09-Feb-09
Document Number: 71618
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7454DP
www.vishay.com
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Gate threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Diode forward voltage
a
Dynamic
b
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain reverse recovery time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= 4 A, di/dt = 100 A/μs
V
DD
= 50 V, R
L
= 50
I
D
1 A, V
GEN
= 10 V, R
g
= 6
V
DS
= 50 V, V
GS
= 10 V, I
D
= 7.8 A
-
-
-
0.5
-
-
-
-
-
24
7.6
5.4
1.25
16
10
35
20
50
30
-
-
2.2
30
20
70
40
80
ns
nC
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 100 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.8 A
V
GS
= 6 V, I
D
= 7.2 A
V
DS
= 15 V, I
D
= 7.8 A
I
S
= 4 A, V
GS
= 0 V
2
-
-
-
30
-
-
-
-
-
-
-
-
-
0.028
0.032
25
0.8
4
± 100
1
20
-
0.034
0.040
-
1.2
V
nA
μA
A
S
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
a. Pulse test: pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S09-0227-Rev. D, 09-Feb-09
Document Number: 71618
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7454DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
V
GS
= 10 V thru 6 V
24
I
D
-
Drain Current (A)
5V
10
I
D
= 7.8 A
Vishay Siliconix
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 50 V
6
18
12
4
6
4V
0
0
1
2
3
4
5
2
0
0
5
10
15
20
25
V
DS
-
Drain-to-Source Voltage (V)
Q
g
-
Total Gate Charge (nC)
Output Characteristics
Gate Charge
30
30
24
I
D
- Drain Current (A)
T
J
= 150 °C
I
S
- Source Current (A)
10
18
12
T
C
= 125 °C
6
25 °C
- 55 °C
0
0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
Transfer Characteristics
Source-Drain Diode Forward Voltage
0.05
2500
R
DS(on)
-
On-Resistance ()
0.04
C - Capacitance (pF)
V
GS
= 6.0 V
0.03
V
GS
= 10 V
0.02
2000
C
iss
1500
1000
0.01
500
C
rss
C
oss
0.00
0
6
12
18
24
30
0
0
10
20
30
40
50
60
I
D
-
Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
S09-0227-Rev. D, 09-Feb-09
Document Number: 71618
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si7454DP
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
2.4
I
D
= 7.8 A
R
DS(on)
-
On-Resistance (Normalized)
2.0
V
GS(th)
Variance (V)
0.5
Vishay Siliconix
V
GS
= 10 V
1.6
0.0
I
D
= 250 µA
-0.5
1.2
-1.0
0.8
0.4
-50
-1.5
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
Threshold Voltage
0.06
100
0.05
I
D
= 7.8 A
0.04
Power (W)
80
60
0.03
40
0.02
20
0.01
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
0
0.01
0.1
1
Time (s)
10
100
600
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
S09-0227-Rev. D, 09-Feb-09
Document Number: 71618
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?71618.
S09-0227-Rev. D, 09-Feb-09
Document Number: 71618
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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