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PEMH19; PUMH19
NPN/NPN resistor-equipped transistors;
R1 = 22 kΩ, R2 = open
Rev. 03 — 15 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN Resistor-Equipped Transistors (RET).
Table 1.
Product overview
Package
NXP
PEMH19
PUMH19
SOT666
SOT363
JEITA
-
SC-88
NPN/PNP
complement
PEMD19
PUMD19
PNP/PNP
complement
PEMB19
PUMB19
Type number
1.2 Features
Built-in bias resistor
Simplifies circuit design
Reduces component count
Reduces pick and place costs
1.3 Applications
Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
O
R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
Conditions
open base
Min
-
-
15.4
Typ
-
-
22
Max
50
100
28.6
Unit
V
mA
kΩ
NXP Semiconductors
PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
GND (emitter) TR1
input (base) TR1
output (collector) TR2
GND (emitter) TR2
input (base) TR2
output (collector) TR1
TR1
Simplified outline
6
5
4
Symbol
6
5
4
R1
TR2
1
2
3
001aab555
R1
1
2
3
sym090
3. Ordering information
Table 4.
Ordering information
Package
Name
PEMH19
PUMH19
-
SC-88
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
PEMH19
PUMH19
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
[1]
6F
H6*
Type number
PEMH19_PUMH19_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
2 of 8
NXP Semiconductors
PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current (DC)
peak collector current
total power dissipation
SOT363
SOT666
T
stg
T
j
T
amb
Per device
P
tot
total power dissipation
SOT363
SOT666
[1]
[2]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
Max
50
50
5
100
100
200
200
+150
150
+150
Unit
V
V
V
mA
mA
mW
mW
°C
°C
°C
Per transistor
T
amb
≤
25
°C
[1]
[1][2]
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
[1]
[1][2]
-
-
300
300
mW
mW
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
SOT363
SOT666
Per device
R
th(j-a)
thermal resistance from
junction to ambient
SOT363
SOT666
[1]
[2]
Conditions
in free air
[1]
[1][2]
Min
Typ
Max
Unit
Per transistor
-
-
-
-
625
625
K/W
K/W
in free air
[1]
[1][2]
-
-
-
-
416
416
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
PEMH19_PUMH19_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
3 of 8
NXP Semiconductors
PEMH19; PUMH19
NPN/NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
CEO
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
bias resistor 1 (input)
collector capacitance
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
Conditions
V
CB
= 50 V; I
E
= 0 A
V
CE
= 30 V; I
B
= 0 A
V
CE
= 30 V; I
B
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 1 mA
I
C
= 10 mA; I
B
= 0.5 mA
Min
-
-
-
-
100
-
15.4
-
Typ
-
-
-
-
-
-
22
-
Max
100
1
50
100
-
150
28.6
2.5
mV
kΩ
pF
Unit
nA
μA
μA
nA
Per transistor
I
EBO
h
FE
V
CEsat
R1
C
c
500
h
FE
(1)
006aaa172
10
3
006aaa173
400
V
CEsat
(mV)
(2)
300
10
2
(2) (1)
(3)
200
(3)
100
10
−1
1
10
I
C
(mA)
10
2
10
1
10
I
C
(mA)
10
2
V
CE
= 5 V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
PEMH19_PUMH19_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 15 November 2009
4 of 8
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