StrongIRFET
IRFS7434PbF
IRFSL7434PbF
Applications
l
l
l
l
l
l
l
l
l
HEXFET
®
Power MOSFET
D
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
40V
1.25m
Ω
1.6m
Ω
320A
195A
G
S
c
I
D
(Package Limited)
D
D
Benefits
l
l
l
l
S
G
G
D
S
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
D
2
Pak
IRFS7434PbF
G
D
TO-262
IRFSL7434PbF
S
Gate
Drain
Source
Ordering Information
Base part number
IRFSL7434PbF
IRFS7434PbF
Package Type
TO-262
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
Quantity
50
50
800
Complete Part Number
IRFSL7434PbF
IRFS7434PbF
IRFS7434TRLPbF
RDS(on), Drain-to -Source On Resistance (m
Ω)
5
ID = 100A
4
ID, Drain Current (A)
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Limited By Package
3
T J = 125°C
2
1
TJ = 25°C
0
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
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© 2014 International Rectifier
1
Fig 2.
Maximum Drain Current vs. Case Temperature
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November 19, 2014
IRFS/SL7434PbF
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
320
226
195
1270 *
294
1.96
± 20
5.0
-55 to + 175
Units
A
d
ÃfÃ
W
W/°C
V
V/ns
°C
300
490
1098
See Fig. 14, 15 , 22a, 22b
A
mJ
mJ
Avalanche Characteristics
E
AS (Thermally limited)
E
AS (Thermally limited)
I
AR
E
AR
Thermal Resistance
Symbol
R
θJC
R
θJA
e
Single Pulse Avalanche Energy
k
Avalanche Current
Ãd
Repetitive Avalanche Energy
d
Single Pulse Avalanche Energy
Parameter
Junction-to-Case
j
Typ.
2
Max.
0.5
40
Units
°C/W
Junction-to-Ambient (PCB Mount) , D Pak
l
–––
–––
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
32
1.25
1.8
3.0
–––
–––
–––
–––
2.1
Max.
–––
–––
1.6
–––
3.9
1.0
150
100
-100
–––
Units
V
mV/°C
mΩ
mΩ
V
μA
nA
Ω
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 100A
V
GS
= 6.0V, I
D
= 50A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
g
g
d
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A
by source
bonding technology
. Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements.
(Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.099mH
R
G
= 50Ω, I
AS
= 100A, V
GS
=10V.
I
SD
≤
100A, di/dt
≤
1307A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
θ
is measured at T
J
approximately 90°C.
Limited by T
Jmax
starting T
J
= 25°C, L= 1mH, R
G
= 50Ω, I
AS
= 47A, V
GS
=10V.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
∗
Pulse drain current is limited at 780A by source bonding technology.
2
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© 2014 International Rectifier
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November 19, 2014
IRFS/SL7434PbF
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Min.
211
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
216
51
77
139
24
68
115
68
10820
1540
1140
1880
2208
Typ.
–––
–––
0.9
5.0
38
37
50
50
1.9
Max.
–––
324
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max.
320
Units
S
nC
ns
pF
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
DS
=20V
V
GS
= 10V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz, See Fig. 5
V
GS
= 0V, V
DS
= 0V to 32V , See Fig. 12
V
GS
= 0V, V
DS
= 0V to 32V
g
g
i
h
Diode Characteristics
Units
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
V
V/ns
ns
nC
A
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
R
= 34V,
I
F
= 100A
di/dt = 100A/μs
G
S
Conditions
D
Ãd
1270*
1.3
–––
–––
–––
–––
–––
–––
ÃfÃ
g
g
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
3
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© 2014 International Rectifier
Submit Datasheet Feedback
November 19, 2014
IRFS/SL7434PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
4.5V
10
1
4.5V
≤
60μs
PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
≤
60μs
PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 3.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 4.
Typical Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-60
-20
20
60
100
140
180
T J , Junction Temperature (°C)
ID = 100A
VGS = 10V
ID, Drain-to-Source Current (A)
100
T J = 175°C
10
TJ = 25°C
1
VDS = 10V
≤60μs
PULSE WIDTH
0.1
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
1000000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 6.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 100A
VDS= 32V
VDS= 20V
100000
C, Capacitance (pF)
10000
Ciss
Crss Coss
1000
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
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November 19, 2014
IRFS/SL7434PbF
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
T J = 175°C
1000
100μsec
100
Limited By Package
1msec
10
T J = 25°C
10
10msec
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-to-Drain Voltage (V)
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
DC
0.1
100
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
1.6
50
49
48
47
46
45
44
43
42
41
40
-60
-20
20
60
100
140
180
T J , Temperature ( °C )
Id = 5.0mA
1.4
1.2
VDS= 0V to 32V
Energy (μJ)
1.0
0.8
0.6
0.4
0.2
0.0
0
5
10
15
20
25
30
35
40
45
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( mΩ)
VDS, Drain-to-Source Voltage (V)
Fig 12.
Typical C
OSS
Stored Energy
20.0
VGS = 6.0V
15.0
VGS = 5.5V
10.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
5.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 13.
Typical On-Resistance vs. Drain Current
5
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© 2014 International Rectifier
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November 19, 2014
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