VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 20 A
FEATURES
• Glass passivated pellet chip junction
2
• 150 °C max. operation junction temperature
• Designed and qualified
JEDEC
®
-JESD 47
according
to
2
3
1
1
Cathode
3
Anode
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 approved
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Available
TO-220 FULL-PAK
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-220FP
20 A
1000 V, 1200 V
1.31 V
320 A
95 ns
150 °C
Single die
0.6
APPLICATIONS
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-20ETF...FP... fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/μs
20 A, T
J
= 25 °C
Range
Sinusoidal waveform
CHARACTERISTICS
VALUES
1000 to 1200
20
320
95
1.31
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-20ETF10FPPbF, VS-20ETF10FP-M3
VS-20ETF12FPPbF, VS-20ETF12FP-M3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1100
1300
I
RRM
AT 150 °C
mA
6
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 50 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
270
320
365
515
5150
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 93222
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
VALUES
1.31
11.88
0.93
0.1
V
R
= Rated V
RRM
mA
6
UNITS
V
m
V
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 20 Apk
25 A/μs
25 °C
Typical
VALUES
400
6.1
1.7
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
0.07
minimum
Mounting torque
maximum
Marking device
Case style TO-220 FULL-PAK
12 (10)
6 (5)
oz.
kgf · cm
(lbf · in)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
2.5
62
0.5
2
g
°C/W
UNITS
°C
20ETF10FP
20ETF12FP
Revision: 11-Feb-16
Document Number: 93222
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
35
20ETF..
Series
160
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
30
25
20
120
180°
120°
90°
60°
30°
RMS limit
80
15
10
5
0
0
5
10
15
20
25
Ø
40
30°
60°
90°
120°
180°
Conduction period
T
J
= 150 °C
0
0
4
8
12
16
20
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
20ETF..
Series
300
At any rated load condition and
with
rated
V
RRM
applied following surge.
Maximum Allowable Case
Temperature (°C)
100
Peak Half Sine Wave
Forward Current (A)
250
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
50
30°
60°
90°
120°
180°
25
DC
100
20ETF.. Series
50
0
0
5
10
15
20
30
35
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
550
180°
120°
90°
60°
30°
RMS limit
500
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No
voltage
reapplied
Rated
V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
30
25
20
15
10
5
0
0
Peak Half Sine Wave
Forward Current (A)
450
400
350
300
250
200
150
100
20ETF.. Series
0.01
Ø
Conduction angle
T
J
= 150 °C
5
10
15
20
25
50
0.001
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 93222
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
1000
Instantaneous Forward Current (A)
100
10
T
J
= 25 °C
T
J
= 150 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.7
T
J
= 25 °C
0.6
6
T
J
= 25 °C
I
FM
= 30 A
5
I
FM
= 20 A
4
3
I
FM
= 10 A
2
1
0
0
50
100
150
200
0
50
100
150
200
I
FM
= 5 A
I
FM
= 1 A
0.5
0.4
0.3
0.2
0.1
0
I
FM
= 5 A
I
FM
= 1 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
1.2
T
J
= 150 °C
0.9
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
10
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
t
rr
- Typical Reverse
Recovery Time (µs)
8
6
I
FM
= 10 A
4
I
FM
= 5 A
2
I
FM
= 1 A
0.6
0.3
0
0
50
100
150
200
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
Revision: 11-Feb-16
Document Number: 93222
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series
www.vishay.com
Vishay Semiconductors
35
T
J
= 150 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
25
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
10
I
FM
= 1 A
5
30
I
rr
- Typical Reverse
Recovery Current (A)
I
rr
- Typical Reverse
Recovery Current (A)
20
25
20
15
10
15
I
FM
= 1 A
5
0
0
50
100
150
200
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (K/W)
10
D = 0.5
D = 0.2
1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.1
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
1E+02
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 93222
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
