PD -96258
IRF7220GPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Halogen-Free
S
1
2
3
4
8
7
A
D
D
D
D
S
S
G
V
DSS
= -14V
R
DS(on)
= 0.012Ω
6
5
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infrared, or wave soldering
techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-14
-11
-8.8
-88
2.5
1.6
0.02
110
± 12
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
50
Units
°C/W
07/10/09
www.irf.com
1
IRF7220GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-14
–––
–––
–––
-0.60
8.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -5mA
-0.006 ––– V/°C Reference to 25°C, I
D
= -1mA
.0082 0.012
V
GS
= -4.5V, I
D
= -11A
Ω
.0125 0.020
V
GS
= -2.5V, I
D
= -8.8A
––– –––
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -10V, I
D
= -11A
––– -5.0
V
DS
= -11.2V, V
GS
= 0V
µA
––– -100
V
DS
= -11.2V, V
GS
= 0V, T
J
= 70°C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
84 125
I
D
= -11A
13
20
nC V
DS
= -10V
37
55
V
GS
= -5.0V
19 –––
V
DD
= -10V
420 –––
I
D
= -11A
ns
140 –––
R
G
= 6.2Ω
1040 –––
R
D
= 0.91Ω
8075 –––
V
GS
= 0V
4400 –––
pF
V
DS
= -10V
4150 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
160
147
-2.5
A
-88
-1.2
240
220
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Starting T
J
= 25°C, L = 1.8mH
R
G
= 25Ω, I
AS
= 11A. (See Figure 10)
Pulse width
≤
300µs; duty cycle
≤
2%.
2
www.irf.com
IRF7220GPbF
1000
VGS
-4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
BOTTOM -1.2V
TOP
1000
-I
D
, Drain-to-Source Current (A)
100
10
-I
D
, Drain-to-Source Current (A)
100
VGS
-4.5V
-4.0V
-3.0V
-2.0V
-1.8V
-1.6V
-1.4V
BOTTOM -1.2V
TOP
10
-1.2V
1
-1.2V
1
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
0.1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -11A
-I D, Drain-to-Source Current
(Α
)
1.5
T J = 25°C
T J = 150°C
1.0
0.5
VDS = -10V
10
1.0
1.5
250µs PULSE WIDTH
2.0
2.5
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
T
J
, Junction Temperature (
°
C)
-V GS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF7220GPbF
10000
-V
GS
, Gate-to-Source Voltage (V)
9000
V
GS
= 0V,
f = 1kHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
= -11A
V
DS
=-10V
C, Capacitance (pF)
C
iss
8000
8
6
7000
4
6000
5000
C
oss
C
rss
A
2
4000
1
10
0
0
20
40
60
80
100
120
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150°C
-I
D
, Drain Current (A)
I
100
100us
1
T
J
= 25°C
1ms
10
10ms
0.1
0.0
0.5
1.0
1.5
V
GS
= 0V
2.0
A
2.5
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF7220GPbF
12
300
E
AS
, Single Pulse Avalanche Energy (mJ)
10
250
ID
TOP
-4.9A
-8.8A
BOTTOM -11A
-I
D
, Drain Current (A)
8
200
6
150
4
100
2
50
0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
0
25
Starting T
J
, Junction Temperature (
°
C)
50
75
100
125
150
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.001
0.01
0.1
1
10
100
P
DM
t
1
t
2
10
0.1
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
工业自动化与控制
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
