Freescale Semiconductor
Technical Data
Document Number: MW7IC008N
Rev. 3, 12/2013
RF LDMOS Wideband Integrated
Power Amplifier
The MW7IC008N wideband integrated circuit is designed with on--chip
matching that makes it usable from 20 to 1000 MHz. This multi--stage
structure is rated for 24 to 32 volt operation and covers most narrow
bandwidth communication application formats.
Driver Applications
Typical CW Performance: V
DD
= 28 Volts, I
DQ1
= 25 mA, I
DQ2
= 75 mA
Frequency
100 MHz @ 11 W CW
400 MHz @ 9 W CW
900 MHz @ 6.5 W CW
G
ps
(dB)
23.5
22.5
23.5
PAE
(%)
55
41
34
MW7IC008NT1
100-
-1000 MHz, 8 W PEAK, 28 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, P
out
= 6.5 Watts CW
(3 dB Input Overdrive from Rated P
out
)
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 8 Watts CW
P
out
@ 900 MHz
Typical P
out
@ 1 dB Compression Point
≃
11 Watts CW @ 100 MHz,
9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz
Features
Broadband, Single Matching Network from
20 to 1000 MHz
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.
PQFN 8
8
PLASTIC
V
TTS1
V
TTS2
NC
Quiescent Current
Temperature Compensation
(1)
V
GS1
RF
inS1
V
GS2
RF
outS2
/V
DS2
V
GLS1
NC
NC
NC
RF
inS1
V
GS1
1
2
3
4
5
6
24 23 22 21 20 19
RF
outS1
/V
DS1
RF
inS2
NC
V
GS2
V
TTS2
18
17
16
15
14
13
7 8 9 10 11 12
V
TTS1
V
GLS2
NC
NC
NC
NC
NC
NC
NC
NC
NC
RF
outS2
/V
DS2
RF
outS1
/V
DS1
RF
inS2
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
Freescale Semiconductor, Inc., 2009, 2011--2013. All rights reserved.
MW7IC008NT1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature
100 MHz CW Operation @ T
A
= 25C
(3)
400 MHz CW Operation @ T
A
= 25C
(3)
900 MHz CW Operation @ T
A
= 25C
(3)
Input Power
100 MHz
400 MHz
900 MHz
P
in
Symbol
V
DSS
V
GS
V
DD
T
stg
T
J
CW
Value
--0.5, +65
--6.0, +12
32, +0
--65 to +150
150
11
6
5
27
23
38
Unit
Vdc
Vdc
Vdc
C
C
W
W
W
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(CW Signal @ 100 MHz)
(Case Temperature 82C, P
out
= 11 W CW)
(CW Signal @ 400 MHz)
(Case Temperature 87C, P
out
= 9 W CW)
(CW Signal @ 900 MHz)
(Case Temperature 86C, P
out
= 6.5 W CW)
Symbol
R
JC
Stage 1, 28 Vdc, I
DQ1
= 25 mA
Stage 2, 28 Vdc, I
DQ2
= 75 mA
Stage 1, 28 Vdc, I
DQ1
= 25 mA
Stage 2, 28 Vdc, I
DQ2
= 75 mA
Stage 1, 28 Vdc, I
DQ1
= 25 mA
Stage 2, 28 Vdc, I
DQ2
= 75 mA
5.3
4.9
Value
(1,2)
Unit
C/W
4.4
2.7
3.5
3.2
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1B
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. CW Ratings at the individual frequencies are limited by a 100--year MTTF requirement. See MTTF calculator (referenced in Note 1).
MW7IC008NT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 5.3
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 25 mAdc, Measured in Functional Test)
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 23
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 75 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
Power Gain
Power Added Efficiency
Input Return Loss
V
GS(th)
V
GS(Q)
V
DS(on)
1.3
2
0.1
2
2.7
0.3
2.8
3.5
1
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
Adc
Adc
Adc
V
GS(th)
V
GS(Q)
1.3
2
2
2.8
2.8
3.5
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 25 mA, I
DQ2
= 75 mA, P
out
= 6.5 W CW, f = 900 MHz
G
ps
PAE
IRL
21.5
30
—
G
ps
(dB)
23.5
22.5
23.5
23.5
34
--15
PAE
(%)
55
41
34
31.5
—
--11
dB
%
dB
IRL
(dB)
--20
--17
--15
(continued)
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 25 mA, I
DQ2
= 75 mA
Frequency
100 MHz @ 11 W CW
400 MHz @ 9 W CW
900 MHz @ 6.5 W CW
1. Part internally matched both on input and output.
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Characteristic
IMD Symmetry @ 6.8 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(1)
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(1)
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 500--1000 MHz Bandwidth @ P
out
= 6 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
Symbol
Symbol
IMD
sym
Min
Min
—
Typ
Typ
0.1
Max
Max
—
Unit
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 25 mA, I
DQ2
= 75 mA, 100--1000 MHz Bandwidth
VBW
res
G
F
G
P1dB
—
—
—
—
0.1
1.35
0.024
0.005
—
—
—
—
MHz
dB
dB/C
dB/C
Typical CW Performances — 100 MHz
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 25 mA, I
DQ2
= 75 mA, P
out
= 11 W
CW, f = 100 MHz
Power Gain
Power Added Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
G
ps
PAE
IRL
P1dB
—
—
—
—
23.5
55
--20
11
—
—
—
—
dB
%
dB
W
Typical CW Performances — 400 MHz
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 25 mA, I
DQ2
= 75 mA, P
out
= 9 W
CW, f = 400 MHz
Power Gain
Power Added Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
G
ps
PAE
IRL
P1dB
—
—
—
—
22.5
41
--17
9
—
—
—
—
dB
%
dB
W
Typical CW Performances — 900 MHz
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 25 mA, I
DQ2
= 75 mA, P
out
= 6.5 W
CW, f = 900 MHz
Power Gain
Power Added Efficiency
Input Return Loss
P
out
@ 1 dB Compression Point, CW
1. Not recommended for wide instantaneous bandwidth modulated signals.
G
ps
PAE
IRL
P1dB
—
—
—
—
23.5
34
--15
6.5
—
—
—
—
dB
%
dB
W
MW7IC008NT1
4
RF Device Data
Freescale Semiconductor, Inc.
V
DD1
V
GG2
GND
C17
R12
C16
C15
R8
C9
C8
C7
C5
L4
C14
L5
C10
L7
L6
C13
R11
R10
R9
C12
V
DD2
R1
C3
C11
L2
L1
C2
C1
C4
L3
R2
R3
C6
V
GG1
GND
R4
R5
R6
MW7IC008N
Rev. 1a
R7
Figure 3. MW7IC008NT1 Test Circuit Component Layout
Table 6. MW7IC008NT1 Test Circuit Component Designations and Values
Part
C1
C2, C15
C3, C16
C4, C5, C7, C8, C10,
C11, C12, C14
C6, C17
C9
C13
L1, L7
L2, L6
L3
L4, L5
R1, R12
R2, R3, R4
R5*, R9*
R6
R7, R11
R8
R10
PCB
*Add for temperature compensation
Description
0.01
F
Chip Capacitor
0.1
F
Chip Capacitors
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0.020,
r
= 3.66
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Manufacturer
Murata
Murata
Murata
Kemet
AVX
ATC
ATC
Toko
Toko
Coilcraft
Coilcraft
Susumu
Vishay
Vishay
Vishay
Vishay
Vishay
Vishay
Rogers
MW7IC008NT1
RF Device Data
Freescale Semiconductor, Inc.
5
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