TO
-22
0A
B
BUK9516-55A
N-channel TrenchMOS logic level FET
Rev. 02 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
= 49 A; V
sup
≤
25 V;
R
GS
= 50
Ω;
V
GS
= 5 V;
T
j(init)
= 25 °C; unclamped
-
-
120
mJ
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C
Min
-
-
-
-
-
Typ
-
-
-
10
Max Unit
55
66
138
15
V
A
W
mΩ
mΩ
Static characteristics
12.5 16
NXP Semiconductors
BUK9516-55A
N-channel TrenchMOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G
S
1 2 3
SOT78A (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK9516-55A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78A
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
V
GSM
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
pulsed; t
p
≤
50 µs
T
mb
= 25 °C
pulsed; T
mb
= 25 °C
I
D
= 49 A; V
sup
≤
25 V; R
GS
= 50
Ω;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
T
mb
= 100 °C
T
mb
= 25 °C
T
mb
= 25 °C; pulsed
T
mb
= 25 °C
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
Max
55
55
10
46
66
263
138
175
175
15
66
263
120
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
BUK9516-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2011
2 of 12
NXP Semiconductors
BUK9516-55A
N-channel TrenchMOS logic level FET
100
P
der
(%)
80
003aaf348
100
I
D
(%)
80
003aaf349
60
60
40
40
20
20
0
0
40
80
120
160
200
T
mb
(°C)
0
0
40
80
120
160
200
T
mb
(°C)
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
003aaf350
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
003aaf363
10
3
I
DM
(A)
10
2
R
DS(on)
= V
DS
/ I
D
t
p
= 10
μs
100
WDSS
(%)
80
60
100
μs
10
D.C.
1 ms
10 ms
100 ms
1
1
10
V
DS
(V)
10
2
40
20
0
20
60
100
140
180
T
(mb)
(°C)
T
mb
= 25 °C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage
Fig 4.
I
D
= 75 A
Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
BUK9516-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2011
3 of 12
NXP Semiconductors
BUK9516-55A
N-channel TrenchMOS logic level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
in free air
Conditions
Min
-
-
Typ
-
60
Max
1.1
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
10
−1
0.1
0.05
0.02
0
t
p
P
003aaf351
δ
=
t
p
T
10
−2
t
T
10
−3
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
t
p
(s)
Fig 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9516-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2011
4 of 12
NXP Semiconductors
BUK9516-55A
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 55 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 55 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C
Dynamic characteristics
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
L
D
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain inductance
measured from contact screw on tab
to centre of die ; T
j
= 25 °C
measured from drain lead 6 mm from
package to centre of die ; T
j
= 25 °C
L
S
internal source inductance
from source lead to source bond pad ;
T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 66 A; V
GS
= 0 V; T
j
= 25 °C
t
rr
Q
r
reverse recovery time
recovered charge
I
S
= 20 A; dI
S
/dt = -100 A/µs;
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
V
DS
= 30 V; R
L
= 1.2
Ω;
V
GS
= 5 V;
R
G(ext)
= 10
Ω;
T
j
= 25 °C
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
-
-
-
-
-
-
-
-
-
-
2314
347
243
45
130
400
130
3.5
4.5
7.5
3085
416
333
68
195
560
182
-
-
-
pF
pF
pF
ns
ns
ns
ns
nH
nH
nH
Min
55
50
0.5
1
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.5
-
0.05
-
2
2
-
-
10
12.5
Max
-
-
-
2
2.3
10
500
100
100
17
32
15
16
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Static characteristics
Source-drain diode
V
SD
source-drain voltage
-
-
-
-
0.85
1.1
51
102
1.2
-
164
126
V
V
ns
nC
BUK9516-55A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2011
5 of 12
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