VS-ETU1506S-M3, VS-ETU1506-1-M3
www.vishay.com
Vishay Semiconductors
Ultra Fast Rectifier, 15 A FRED Pt
®
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
• Low leakage current
D
2
PAK (TO-263AB)
Base
cathode
2
TO-262AA
• Designed and qualified
JEDEC
®
-JESD 47
according
to
2
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION
1
N/C
3
Anode
1
N/C
3
Anode
VS-ETU1506S-M3
VS-ETU1506-1-M3
State of the art, ultralow V
F
, soft-switching ultrafast rectifiers
optimized for Discontinuous (Critical) Mode (DCM) Power
Factor Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Circuit configuration
D
2
PAK (TO-263AB), TO-262AA
15 A
600 V
1.1 V
24 ns
175 °C
Single die
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 143 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
600
15
160
-65 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
1.35
1.1
0.01
20
12
8.0
MAX.
-
1.9
1.3
15
200
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Revision: 31-May-17
Document Number: 93590
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU1506S-M3, VS-ETU1506-1-M3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
t
rr
I
RRM
Q
rr
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
MIN.
-
-
-
-
-
-
-
-
-
-
-
TYP.
24
36
40
87
5
9.0
107
430
53
25
730
MAX.
28
47
-
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
Reverse recovery time
Peak recovery current
Reverse recovery charge
C
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heat sink
Weight
Mounting torque
Marking device
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and
greased
TEST CONDITIONS
MIN.
-65
-
-
-
-
-
6
(5)
TYP.
-
1.3
-
0.5
2.0
0.07
-
MAX.
175
1.51
70
-
-
-
12
(10)
ETU1506S
ETU1506-1
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
°C/W
Revision: 31-May-17
Document Number: 93590
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU1506S-M3, VS-ETU1506-1-M3
www.vishay.com
Vishay Semiconductors
1000
I
F
- Instantaneous Forward Current (A)
100
T
J
= 175 °C
I
R
- Reverse Current (μA)
100
10
1
0.1
0.01
0.001
0.0001
175 °C
150 °C
125 °C
100 °C
75 °C
50 °C
25 °C
10
T
J
= 150 °C
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
1000
C
T
- Junction Capacitance (pF)
100
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.5
D = 0.2
D = 0.1
0.1
D = 0.05
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Revision: 31-May-17
Document Number: 93590
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU1506S-M3, VS-ETU1506-1-M3
www.vishay.com
30
25
Average Power Loss (W)
20
15
10
5
0
0
5
10
15
20
25
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
I
F(AV)
- Average Forward Current (A)
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
Vishay Semiconductors
180
Allowable Case Temperature (°C)
170
160
150
DC
140
130
120
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
120
110
100
90
80
I
F
= 15 A, 125 °C
900
800
700
600
Fig. 6 - Forward Power Loss Characteristics
I
F
= 15 A, 125 °C
t
rr
(ns)
Q
rr
(nC)
70
60
50
40
30
20
10
100
I
F
= 15 A, 25 °C
typical value
1000
500
400
300
200
10
typical value
0
100
1000
I
F
= 15 A, 25 °C
dI
F
dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Revision: 31-May-17
Document Number: 93590
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ETU1506S-M3, VS-ETU1506-1-M3
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 31-May-17
Document Number: 93590
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
