RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. The SBB3089Z product is designed for high linearity 5V gain
block applications that require excellent gain flatness, small size, and min-
imal external components. It is internally matched to 50.
Gain and Return Loss V
S
= 5V, I
S
= 42mA
Features
Single Fixed 5V Supply
Patented Self Bias Circuit and
Thermal Design
Gain=16.4dBm at 1950MHz
P
1dB
=15.2dBm at 1950MHz
OIP
3
=29.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Wideband Instrumentation
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
SiGe BiCMOS
30
20
10
S21
Applications
Bias Tee Data, Z
S
= Z
L
= 50 Ohms, T
L
= 25C
dB
0
-10
S11
-20
-30
0
1
2
3
4
5
6
S22
Si CMOS
Frequency (GHz)
Parameter
Small Signal Gain
Min.
15.1
14.9
Specification
Typ.
16.6
16.4
16.3
15.6
15.2
15.4
30.0
29.5
29.5
21
25.5
3.9
4.2
42
Max.
18.1
17.9
Unit
Condition
dB
850MHz
dB
1950MHz
dB
2400MHz
Output Power at 1dB Compression
dBm
850MHz
14.2
dBm
1950MHz
dBm
2400MHz
Output Third Order Intercept Point
dBm
850MHz
27.5
dBm
1950MHz
dBm
2400MHz
Input Return Loss
16
dB
1950MHz
Output Return Loss
19
dB
1950MHz
Noise Figure
4.9
dB
1950MHz
Device Operating Voltage
4.3
V
R
DC
=20, V
S
=5.0V
Device Operating Current
38
46
mA
R
DC
=20, V
S
=5.0V
Operational Current Range
30
46
mA
Per user preference via R
DC
Thermal Resistance
80
°C/W
Junction to lead
Test Conditions: V
D
=4.2V, I
D
=42mA, T
L
=25°C , OIP
3
Tone Spacing=1MHz, R
DC
=20, Bias Tee Data, Z
S
=Z
L
=50, P
OUT
per tone=-5dBm
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
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