Freescale Semiconductor
Technical Data
Document Number: MRFE6VP5150N
Rev. 1, 7/2014
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial (including laser and plasma exciters), broadcast (analog and digital),
aerospace and radio/land mobile applications. They are unmatched input and
output designs allowing wide frequency range utilization, between 1.8 and
600 MHz.
Typical Performance:
V
DD
= 50 Vdc
Frequency
(MHz)
87.5–108
(1,3)
230
(2)
230
(2)
Signal Type
CW
CW
Pulse
(100
sec,
20%
Duty Cycle)
P
out
(W)
179
150
150 Peak
G
ps
(dB)
22.5
26.3
26.1
D
(%)
74.6
72.0
70.3
MRFE6VP5150NR1
MRFE6VP5150GNR1
1.8–600 MHz, 150 W CW, 50 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
TO-
-270WB-
-4
PLASTIC
MRFE6VP5150NR1
Load Mismatch/Ruggedness
Frequency
(MHz)
98
(1)
Signal Type
CW
VSWR
> 65:1
at all Phase
Angles
P
in
(W)
3.0
(3 dB
Overdrive)
0.62 Peak
(3 dB
Overdrive)
Test
Voltage
50
Result
No Device
Degradation
TO-
-270WBG-
-4
PLASTIC
MRFE6VP5150GNR1
230
(2)
Pulse
(100
sec,
20%
Duty Cycle)
Gate A 3
2 Drain A
1. Measured in 87.5–108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the
indicated frequency range.
Gate B 4
1 Drain B
Features
Wide Operating Frequency Range
Extreme Ruggedness
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated Stability Enhancements
Low Thermal Resistance
Integrated ESD Protection Circuitry
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Pin Connections
Freescale Semiconductor, Inc., 2014. All rights reserved.
MRFE6VP5150NR1 MRFE6VP5150GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
Total Device Dissipation @ T
C
= 25C
Derate above 25C
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
–0.5, +133
–6.0, +10
–65 to +150
–40 to +150
–40 to +225
952
4.76
Unit
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 80C, 150 W CW, 50 Vdc, I
DQ(A+B)
= 100 mA, 230 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 66C, 150 W Peak, 100
sec
Pulse Width,
20% Duty Cycle, 50 Vdc, I
DQ(A+B)
= 100 mA, 230 MHz
Symbol
R
JC
Z
JC
Value
(2,3)
0.21
0.04
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
B, passes 250 V
IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 50 mAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 100 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 480
Adc)
Gate Quiescent Voltage
(V
DD
= 50 Vdc, I
D
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.8
2.3
—
2.4
2.8
0.26
2.8
3.3
—
Vdc
Vdc
Vdc
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
133
—
—
—
139
—
—
1
—
5
10
Adc
Vdc
Adc
Adc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Each side of device measured separately.
(continued)
MRFE6VP5150NR1 MRFE6VP5150GNR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 50 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 50 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.8
45.4
96.7
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 50 Vdc, I
DQ(A+B)
= 100 mA, P
out
= 150 W Peak (30 W Avg.),
f = 230 MHz, 100
sec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
D
IRL
25.0
68.0
—
26.1
70.3
–16
27.5
—
–9
dB
%
dB
Load Mismatch/Ruggedness
(In Freescale Test Fixture) 50 ohm system, I
DQ(A+B)
= 100 mA
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
VSWR
> 65:1
at all Phase Angles
P
in
(W)
0.62 Peak
(3 dB Overdrive)
Test Voltage, V
DD
50
Result
No Device Degradation
1. Each side of device measured separately.
2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing
(GN) parts.
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
3
TYPICAL CHARACTERISTICS
300
100
C, CAPACITANCE (pF)
C
iss
NORMALIZED V
GS(Q)
C
oss
10
1.06
1.05 300 mA
1.04
1.03
800 mA
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
--50
V
DD
= 50 Vdc
I
DQ(A+B)
= 100 mA
1300 mA
1
Measured with
30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
0
10
20
30
40
C
rss
0.1
50
--25
0
25
50
75
100
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
T
C
, CASE TEMPERATURE (C)
I
DQ
(mA)
100
300
800
1300
Slope (mV/C)
–2.466
–2.058
–2.015
–1.877
Note:
Each side of device measured separately.
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
10
8
I
D
= 3.36 Amps
V
DD
= 50 Vdc
10
7
MTTF (HOURS)
10
6
4.14 Amps
4.97 Amps
10
5
10
4
90
110
130
150
170
190
210
230
250
T
J
, JUNCTION TEMPERATURE (C)
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 4. MTTF versus Junction Temperature - CW
-
MRFE6VP5150NR1 MRFE6VP5150GNR1
4
RF Device Data
Freescale Semiconductor, Inc.
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
C3 C5
B1
C1
COAX1
L1 C12
C7
MRFE6VP5150N
Rev. 2
D57619
L3
C16
C14
C20
CUT OUT AREA
C18
C21 C23
C25
COAX3
C27
C29
C9
C10
C11
C19
C15
C17
L4
C26
COAX4
C31
COAX2
L2
C13
C2
B2
C4 C6
C8
C22 C24
C28
C30
Figure 5. MRFE6VP5150NR1 Narrowband Test Circuit Component Layout — 230 MHz
MRFE6VP5150NR1 MRFE6VP5150GNR1
RF Device Data
Freescale Semiconductor, Inc.
5
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